Synthesis and thermoelectric characterisation of bismuth nanoparticles
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Transcript of Synthesis and thermoelectric characterisation of bismuth nanoparticles
RESEARCH PAPER
Synthesis and thermoelectric characterisation of bismuthnanoparticles
Gianfranco Carotenuto Æ Cornelia L. Hison ÆFilomena Capezzuto Æ Mariano Palomba ÆPietro Perlo Æ Pellegrino Conte
Received: 13 February 2008 / Accepted: 12 October 2008 / Published online: 31 October 2008
Springer Science+Business Media B.V. 2008
Abstract An effective method of preparation of
bismuth nanopowders by thermal decomposition of
bismuth dodecyl-mercaptide Bi(SC12H25)3 and pre-
liminary results on their thermoelectric properties are
reported. The thermolysis process leads to Bi nano-
particles due to the efficient capping agent effect of
the dodecyl-disulfide by-product, which strongly
bonds the surface of the Bi clusters, preventing their
aggregation and significantly reducing their growth
rate. The structure and morphology of the thermolysis
products were investigated by differential scanning
calorimetry, thermogravimetry, X-ray diffractometry,1H nuclear magnetic resonance spectroscopy, scan-
ning electron microscopy, and energy dispersive
spectroscopy. It has been shown that the prepared
Bi nanopowder consists of spherical shape nanopar-
ticles, with the average diameter depending on the
thermolysis temperature. The first results on the
thermoelectric characterization of the prepared Bi
nanopowders reveal a peculiar behavior characterized
by a semimetal–semiconductor transition, and a
significant increase in the Seebeck coefficient when
compared to bulk Bi in the case of the lowest grain
size (170 nm).
Keywords Bismuth nanoparticles Mercaptide thermolysis Semimetal–semiconductor transition Thermoelectric characteristics Nanopowder
Introduction
Thermoelectric materials generate electrical power
from a temperature gradient through Seebeck effect
and use electricity to work as heat pumps through
Peltier effect, providing active cooling (in the
absence of refrigerants) or heating without the need
of moving parts, but based on carrier conduction
(Nolas et al. 2001). These materials, with long life
and maintenance-free, have important economical
applications in systems where the waste heat gener-
ated can be harvested to provide useful power, such
as in microelectronics–microprocessor cooling, opto-
electronics, etc. (Heremans 2005). The high
simplicity and environmental-friendly (no noise, no
pollution) characteristics of the thermoelectric energy
G. Carotenuto (&) C. L. Hison F. Capezzuto M. Palomba
Istituto dei Materiali Compositi e Biomedici,
Consiglio Nazionale delle Ricerche, Piazzale Tecchio 80,
80125 Napoli, Italy
e-mail: [email protected]
P. Perlo
Centro Ricerche Fiat, Strada Torino 50,
10043 Orbassano (TO), Italy
P. Conte
Dipartimento di Ingegneria e Tecnologie Agro-Forestali
(DITAF), Universita degli Studi di Palermo,
Viale delle Scienze 13, 90128 Palermo, Italy
123
J Nanopart Res (2009) 11:1729–1738
DOI 10.1007/s11051-008-9541-6
conversion principle have cost, until now, lower
efficiency. Consequently, the use of thermoelectric
devices, consisting of a sequence of thermoelectric
materials connected electrically in series and ther-
mally in parallel, has been limited to niche
applications for which the high reliability, compact-
ness, and user-friendly performance overcome the
lack of efficiency.
As well known, the measure of the thermoelectric
efficiency of a material is given by the dimensionless
figure of merit ZT defined as (Goldsmid 1964):
ZT ¼ S2rke þ kL
T ð1Þ
where S is the Seebeck coefficient, defined as the
thermoelectric voltage induced by a temperature
gradient across the material, S ¼ DVDT , r is the electrical
conductivity, T is the temperature (in Kelvin degrees),
ke and kL are the electronic and lattice (phononic)
thermal conductivities, respectively. An efficient ther-
moelectric energy conversion requires large ZT values,
which means large electrical conductivity, high
Seebeck coefficient (large voltage in power generation
and large Peltier coefficient in cooling) and low
thermal conductivity (to allow large temperature
differences and, consequently, large voltage in power
generation or to reduce the heat leakage between the
hot and cold side of the device when used as
refrigerator) (Nolas et al. 2001).
In the recent years, the identification of new
materials with high ZT value has proved to be an
extremely challenging task due to the interdepen-
dence among the Seebeck effect, thermal, and
electrical conductivity. The tailoring of the three
parameters in view of large ZT values is difficult in
conventional bulk crystalline solids because the
modification of one of them adversely affects the
other (e.g., an increase in the electrical conductivity
leads to an additional enhancement in the electronic
contribution to the thermal conductivity) (Ashcroft
and Mermin 1976; Hicks and Dresselhaus 1993a, b).
The recent approach for the thermoelectric efficiency
improvement is based on nanoscale structuring to
benefit from the phonon boundary scattering and
quantum size effects (i.e., charge carriers confine-
ment at nanoscale in one (quantum wires), two
(quantum wells, superlattices) or three (quantum
dots) dimensions), which determine the decoupling
of ZT parameters (Hicks and Dresselhaus 1993a, b);
Dresselhaus et al. 1999; Chen et al. 2000, 2003). In
this way, the thermoelectric energy conversion in
low-dimensional structures could reach the kind of
performances needed for the widespread application
of the thermoelectric technology.
The peculiar electronic transport characteristics of
bulk semimetal bismuth Bi, such as small band
overlap of the conduction and valence bands (Gallo
et al. 1963), very small electron effective masses
(Isaacson et al. 1969), very long carrier mean-free
path (several orders of magnitude greater than for
most metals) (Rogacheva et al. 2003), low carrier
concentration, and highly anisotropic carrier effective
masses (varying as much as 2009) (Gallo et al. 1963;
Issi 1979) make it particularly interesting for ther-
moelectric applications when the size reduction of the
building blocks induces quantum confinement effects
(e.g., semimetal–semiconductor transition) and pho-
non boundary scattering (Gallo et al. 1963; Heremans
et al. 2000; Black et al. 2002). In fact, the nano-
structured Bi exhibits significantly enhanced
thermoelectric efficiency when compared to bulk
Bi. Most of the previous works on nanostructured
bismuth show a long-standing interest in nanotubes,
nanowires and nanowire arrays (Hicks and Dresselhaus
1993a, b); Zhang et al. 1998; Heremans and Thrush
1999; Li et al. 2001; Huber et al. 2003; Heremans
2005), and thin films structures/quantum well super-
lattices (Hoffman et al. 1993; Lu et al. 1996; Cho
et al. 1997; Rogacheva et al. 2003).
Although larger enhancements in the thermoelec-
tric performance are predicted in quantum dot
structures (Heremans et al. 2002; Lin et al. 2003),
essentially confined in all three dimensions, much
less studies on Bi nanoparticles production and
thermoelectric characterization are available in the
literature (Zhao et al. 2004; Balan et al. 2004; Grass
and Stark 2006; Hostler et al. 2007) with respect to
the researches directed toward thin films and nano-
wire/nanorod arrays. It has been reported that Bi
nanoparticles are often contaminated during the
production process (e.g., by oxidation, from remain-
ing surfactants or solvents, etc.) (Balan et al. 2004;
Zhao et al. 2004; Fu et al. 2005; Hostler et al. 2007)
and their large-scale preparation is limited by low-
effectiveness production rates and complicated pro-
cedures (Wegner et al. 2002; Hostler et al. 2007).
1730 J Nanopart Res (2009) 11:1729–1738
123
In this context of just a few studies in the field of
thermoelectric Bi nanoparticles and of their difficult
preparation, the present work reports an effective
synthesis method of zero-valent Bi nanopowder by
thermal decomposition of bismuth dodecyl-mercap-
tide and the first experimental results on the
thermoelectric characterisation of Bi pills sintered
by powder uniaxial compression. The structural and
morphological characterisation of Bi nanopowder
prepared at different thermolysis temperatures is also
provided.
Experimental
The precursor bismuth dodecyl-mercaptide
Bi(SC12H25)3 is not a commercially available product.
Therefore it was synthesised in the laboratory by
reacting stoichiometric amounts of dodecanethiol
C12H25SH (Aldrich, 98.5%) with bismuth (III) chlo-
ride BiCl3, (Aldrich, 99.999%) according to a simple
chemical route already described in a previous article
(Nicolais and Carotenuto 2008). The thermal decom-
position of Bi(SC12H25)3 is expected to give zero-
valent bismuth Bi(0) and dodecyl-disulfide
(SH25C12)2, as organic by-product. The mercaptide
thermolysis was performed in a glass tube by immer-
sion in an oil thermostatic bath with the temperature in
the range 140–180 C, for 3 min under vacuum in
order to prevent bismuth oxidation. The thermolysis
product was dispersed in chloroform, separating the
organic and non-organic products by centrifugation at
8,000 rpm, for 10 min. The purified non-organic
product Bi(0) was isolated as a gray powder, while
the organic by-product (SH25C12)2 was obtained as a
white solid layer after chloroform evaporation. Bulk
samples in the shape of pills with the diameter of
13 mm and about 0.5 mm in thickness were obtained
by synthesising the as-prepared Bi powder at 590 MPa
for 15 min at room temperature by means of an
uniaxial hydraulic press (Retsch PP 25).
The thermal decomposition of bismuth dodecyl-
mercaptide was studied by differential scanning
calorimetry (DSC, TA INSTRUMENTS 2920) and
thermogravimetric analysis (TGA, TA INSTRU-
MENTS 2950). Two consecutive DSC runs were
performed from 0 to 300 C, at a rate of 10 C/min
under fluxing nitrogen and using sealed aluminum
capsules to avoid changes in the thermogram baseline
due to organic by-product evaporation. The TGA
thermograms were acquired by heating the samples
from room temperature up to 850 C, at a rate of
10 C/min, under fluxing nitrogen.
The identification of the organic by-product of Bi-
mercaptide thermal decomposition was performed by
solution-state 1H nuclear magnetic resonance
(1H-NMR) spectroscopy, carried out on a Bruker
Avance 400 MHz instrument, operating at a proton
frequency of 400.13 MHz. The spectrometer was
equipped with a 5-mm Bruker inverse broadband probe
with an actively shielded z-gradient coil. The spectra
were acquired and elaborated by Bruker Topspin 1.3
software. 1H NMR spectra were referenced to the
chemical shift of the solvent (deuterated chloroform),
resonating at 7.26 ppm. Two-dimensional correlation
spectroscopy (2DCOSY) experiments were acquired
with a 16:12:40 gradient ratio (duration, 1 ms), 44
scans, 2,000 points in F2, and 256 points in F1. COSY
spectra were transformed with a sine-bell weighting
function in both dimensions applying a sine-bell shift
(SSB) of 0.
The composition and crystal structure of the as-
prepared gray powder were investigated by X-ray
powder diffractometry (XRD, Rigaku DMAX-IIIC),
using CuKa radiation (k = 0.154056 nm), in a stan-
dard Bragg-Brentano geometry. The detection range
was 2h = 5–80 in steps of 0.02 and with a counting
rate of 8 s/step.
The morphology of both as-prepared powder and
sintered pills was examined by scanning electron
microscopy (SEM, Cambridge-S360). The SEM
specimens were obtained by placing the powder/pill
fragment(s) onto an aluminum stab, on a biadhesive
graphite tape, and performing successively a graphi-
tisation process. The powder composition was further
examined by means of an energy dispersive spec-
trometer coupled with the used scanning electron
microscope (SEM–EDS).
The thermoelectric characterization of the synthe-
sized Bi pills was accomplished by DC electrical
resistance and Seebeck coefficient measurements, as
well as by investigating the electrical resistance
behavior with the temperature. The resistance was
measured by conventional two-point probe DC
measurements performed at room temperature and
at 77 K, in a probe station, with an error not
exceeding ±5%. Practically, the pills resistance was
determined from current measurements over a range
J Nanopart Res (2009) 11:1729–1738 1731
123
of applied voltage (?/–10 V) using a high resolution
picoamperometer (Keithley 6487). The resistance
versus temperature dependence was obtained by
cooling the bismuth pill from 280 to 80 K under
vacuum at 1 V constant voltage using a cryogenic
probe station. The Seebeck coefficient S ¼ DVDT was
determined by means of a modified Z-Meter (Gromov
et al. 2001), as first screening parameter for the
improvement in the thermoelectric efficiency. A
small AC voltage was applied to the pill under test,
inducing a temperature gradient across its thickness,
through the Peltier effect. The current was periodi-
cally disconnected to measure the induced
temperature difference across the pill and the gener-
ated Seebeck voltage simultaneously. The effective
Seebeck coefficient was evaluated by fitting the
Seebeck voltage linearly as a function of the
temperature difference.
Results and discussion
The typical DSC thermogram of pure bismuth
dodecyl-mercaptide presented in Fig. 1a shows: a
quite intensive endothermic peak at 66 C corre-
sponding to the melting point of the mercaptide; a
much less intensive endothermic peak at 105 C
determined by the mercaptide thermal decomposi-
tion; a broad exothermic peak of low intensity in the
range 180–200 C related to the clustering of the Bi
atoms generated from the mercaptide thermal decom-
position; and another endothermic peak at 271 C,
corresponding to Bi melting point. The second DSC
run (Fig. 1b), performed on the same sample, exhibits
two endothermic peaks: the first, at 27 C, is
determined by the melting of the organic by-products
mixture resulted from the thermal decomposition
reaction and the second, at 271 C, corresponds to the
Bi melting point.
A complementary method employed to investigate
the product of the mercaptide thermolysis was the
TGA, which gives information about the reaction
stoichiometry. The TGA thermogram of pure
Bi(SC12H25)3 (Fig. 2) reveals one distinct weight
loss in the range 175–320 C and a residual weight
equal to 26 wt.% at temperatures over 320 C. Since
the organic by-product of the Bi dodecyl-mercaptide
thermolysis is completely removed by evaporation at
temperatures close to 300 C, the residual weight
corresponds to the synthetised inorganic phase. It was
verified that the experimentally found residual weight
corresponds perfectly to the theoretically calculated
Bi percentage in the precursor mercaptide. This result
confirms, therefore, that the mercaptide thermolysis
gives only zero-valent bismuth (apart the organic by-
product), as theoretically predicted.
The 2DCOSY spectrum (Fig. 3), with mono-
dimensional 1H-NMR experiments on the two F1
and F2 axes, of the organic by-product of
Bi(SC12H25)3 thermal decomposition shows only
one spin system, attributable to (SH25C12)2. The
cross peak A (Fig. 3) was assigned to carbon 1 C1
resonating at 2.69 ppm correlated with C2 at
1.69 ppm. The signal at 1.69 ppm (C3) was, in turn,
0 50 100 150 200 250 300-3,5
-3,0
-2,5
-2,0
-1,5
-1,0
-0,5
0,0
0,5
)g/W(
wolF tae
H
Temperature (°C)
a
0 50 100 150 200 250 300
-2,0
-1,5
-1,0
-0,5
0,0
0,5
)g/W(
wolF tae
H
Temperature (°C)
b
Fig. 1 Typical DSC thermograms (heating rate 10 C/min) of bismuth dodecyl-mercaptide under fluxing nitrogen: first (a) and
second (b) run
1732 J Nanopart Res (2009) 11:1729–1738
123
correlated to carbon 3 at 1.38 ppm (cross peak B),
whereas C3 and C4–11 (1.33 ppm) were correlated
through cross peak C. Finally, carbons 4–11 appeared
to be correlated to the methyl group at 0.91 ppm
through cross peak D (Fig. 3). The results of the
NMR experiments reveal that the thermal decompo-
sition of Bi(SC12H25)3 produces disulfide as organic
by-product.
The DSC and TGA results in what concern the
formation of only Bi(0) as non-organic product of the
Bi mercaptide thermolysis are confirmed by XRD
measurements. The typical XRD spectrum of the gray
powder resulted after the thermolysis process is
shown in Fig. 4. All the observed diffraction peaks
can be indexed to the rhombohedral crystal structure
of bismuth, according to the standard ICDD PDF
(Card. No. 05–0519), apart only one peak corre-
sponding to Bi2S3 (240). No other foreign phases can
be seen within the apparatus detection limits.
The good purity of the Bi(0) product was con-
firmed by SEM–EDS measurements. The EDS
pattern (Fig. 5) of the gray powder resulted from
the mercaptide thermolysis shows only peaks related
to Bi (apart one peak corresponding to carbon C,
which comes from the graphite substrate of the
sample or from the graphitization process).
The obtained structural data allow us to assume
that the thermolysis process of Bi(SC12H25)3 is based
on the homolytic dissociation of the Bi–S bonds with
0 200 400 600 800
20
40
60
80
100
)%( thgie
W
Temperature (°C)
Fig. 2 TGA curve (heating rate: 10 C/min) of bismuth
dodecyl-mercaptide under fluxing nitrogen
Fig. 3 2DCOSY spectrum, with mono-dimensional 1H-NMR
experiments on the two F1 and F2 axes, of the organic by-
product of bismuth dodecyl-mercaptide thermal decomposition
20 30 40 50 60 70 800
1000
2000
3000
4000
5000
6000
) 5 2 1 ( ) 7 2 0 (
) 5 0 2 ( ) 7 0 1 (
) 8 1 0 (
) 0 0 3 ( ) 4 1 2 (
) 2 2 1 ( ) 6 1 1 ( i
B 2 S
3
) 4 2 0 (
) 2 0 2 ( ) 3 1 1 ( ) 5 1 0 (
) 0 1 1 (
) 3 0 0 ( ) 1 0 1 (
) . u . a ( y t i s n e t n I
2 θ (degrees )
) 2 1 0 (
) 4 0 1 (
Fig. 4 Typical XRD spectrum of the gray powder resulting
from the bismuth dodecyl-mercaptide thermolysis
B
BB
B
C
Energy (keV) 2.00 6.00 10.00 14.00 18.00
B
Fig. 5 Typical SEM–EDS pattern of the gray powder obtained
from the thermal decomposition of the bismuth dodecyl-
mercaptide
J Nanopart Res (2009) 11:1729–1738 1733
123
the formation of Bi atoms and H25C12S• radicals,
which combine together leading to disulfide mole-
cules (SC12H25)2. The Bi phase separation and atomic
clustering take place following a temperature-depen-
dent mechanism that is further described below. The
Bi clusters are an electrophilic species due to the
presence of 6p empty orbitals, while the disulfide
molecules are strongly nucleophilic owing to the high
polarizable lone-pair electrons on the sulfur atoms.
Consequently, the nucleophilic disulfide molecule
bonds the electrophilic surface of the Bi clusters,
leading to the formation of an effective efficient steric
barrier which prevent the particles from aggregation
and limit their growth (Larsen et al. 2003). Therefore,
the Bi(SC12H25)3 thermolysis leads to nanosized Bi
powder due to the disulfide capping layer on the
metallic particles’ surface.
The temperature of the mercaptide thermolysis
was varied in the range 140–180 C, in order to
investigate the temperature influence on the mor-
phology of the resulting Bi(0) particles. The
reproducibility of the samples morphology as a
function of the processing temperature has been
verified by several sample preparations for each
decomposition temperature. The representative SEM
images of the Bi(0) powders prepared at 140, 160 and
180 C (Fig. 6a–c, respectively) reveal the formation
of well defined, regular spherical shape nanoparticles
for all performed thermolyses. The Bi particles’ size
and the size distribution (Fig. 6 insets) were evalu-
ated examining the SEM micrographs by means of an
image analysis software. The determined average
diameter D and the related standard deviation r of the
Bi particles obtained from the mercaptide thermal
decomposition at 140, 160 and 180 C are
D = 601 nm and r = 202 nm, D = 202 nm and
r = 32 nm, and D = 170 nm and r = 31 nm,
respectively. On increasing the thermal decomposi-
tion temperature, a decrease in the particles size can
be seen together with an increase in shape regularity
and a narrower size distribution. The mechanism
governing the nucleation and growth of the Bi
particles in the used thermolysis conditions is the
following: during the thermal treatment, the mercap-
tide decomposes producing a large amount of Bi
atoms and the phase separation takes place at a high
supersaturation level for the whole duration of the
thermal treatment. The metal nuclei are continuously
Fig. 6 Representative
SEM micrographs of the Bi
nanopowder obtained by
thermal decomposition of
bismuth dodecyl-
mercaptide at 140 C (a),
160 C (b) and 180 C,
(c) and of the Bi pills (d)
prepared by uniaxial
compression at 590 MPa,
for 15 min of the Bi
nanopowder obtained at
180 C. The related size
histograms of the Bi
nanoparticles are presented
in the insets
1734 J Nanopart Res (2009) 11:1729–1738
123
generated by atomic clustering, at a nucleation rate
increasing with the thermolysis temperature, but with
a low growth rate due to the short treatment time and
limited Bi atomic diffusion into the mercaptide/di-
sulfide mixture.
The SEM analysis of the as-synthesised Bi pills
morphology (Fig. 6d) shows the preservation of the
nanostructure, with no essential grains deformation
from their spherical shape, but with the increase in
the average particles size (e.g., D = 272 nm,
r = 54 nm for the pills obtained by the compression
of Bi nanopowder with the average size of 170 nm
prepared from 180 C mercaptide thermolysis) with
respect to the precursor Bi nanopowder, due to grain
aggregation events induced by the compression
process.
The first thermoelectric investigation of the as-
synthesised Bi pills was focused on the measurement
of the current–voltage curves I = f(V) at both room
temperature and %77 K. In the case of the pill
prepared by pressing the 170 nm Bi nanopowder, a
non-linear current dependence on the applied voltage
and a higher electrical resistance at %77 K with
respect to room temperature for the same values of
applied voltage can be seen in Fig. 7a. These results
indicate a semiconductive behavior. A better visual-
ized evidence of the resistance non-linearity is
furnished by the non-linear conductance (1/R) depen-
dence on the applied voltage V at room temperature
and at %77 K (Fig. 7b). The current–voltage curves
for the pills obtained by pressing the 601 and 202 nm
Bi nanopowders exhibit a typical metallic behavior,
similar to bulk Bi. Until now, semimetal–semicon-
ductor transition in Bi nanostructures, induced by
quantum confinement effects, has been reported for
nanoparticles with diameter less than 40 nm (Wang
et al. 2006), for nanowire arrays and thin films below
50 nm (Lin et al. 2000; Heremans 2005; Wang et al.
2006), and for nanowires in the range 100–60 nm
(Yonghui and Jingying 2005).
A further evidence for the semiconductor behavior
of the pills prepared by pressing the 170 nm Bi
nanopowder was obtained from the temperature-
dependent resistance measurements performed by
cooling the Bi pill from 280 to 80 K at 1 V constant
voltage (Fig. 8a). As shown in the figure, the
electrical resistance decreases with increase in tem-
perature. This inverse trend with respect to the bulk
Bi semimetal behavior is typical of a semiconductor.
The measured resistance R values were further
plotted versus (1/T) (Fig. 8b) in order to evaluate
the energy gap Eg. It is well known that the resistance
of a semiconductive material is strongly dependent
on the width of the band gap, following the equation
(Seeger 1985):
R ¼ R0 expEg
2kBT
ð2Þ
where R0, Eg, kB, and T are pre-exponential constant,
the energy gap, the Boltzmann constant
(kB = 8.617 9 10-5 eV), and the temperature,
respectively. Therefore, the energy gap of the inves-
tigated Bi pill can be found from a non-linear curve
fit of R ¼ f 1T
in two temperature ranges, 280–117 K
and 100–82 K, from the relation:
1
t1
¼ Eg
2kB
ð3Þ
where t1 was determined to be t1 = 0.00102 ±
0.00006 for 100–82 K and t1 = 0.00294 ± 0.00003
for 280–117 K. The energy gap evaluated using Eq. 3
is Eg % 0.06 eV in 280–117 K temperature range
and Eg % 0.17 eV for 100–82 K.
-12 -8 -4 0 4 8 12
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
a
Room temperature 77 K
( I×
01 4-
)A
V (V)
-6 -4 -2 0 2 4 6
-40
0
40
80
120
160
200b
Room temperature 77 K PolyFit_Smoothed1InterEx PolyFit_Smoothed2InterEx
)S( ecnatcu dno
C
Voltage (V)
Fig. 7 DC current intensity
I versus applied voltage V at
room temperature (d) and
at 77 K (s) (a) and
conductance versus applied
voltage (b) for the Bi pill
synthesised by uniaxial
pressing the Bi powder
obtained from 180 C
mercaptide thermolysis
J Nanopart Res (2009) 11:1729–1738 1735
123
The effective Seebeck coefficient S ¼ DVDT of the
prepared nanostructured Bi pills was estimated from
the linear fitting of the Seebeck voltage, as a function
of the temperature difference in the range 318–373 K.
Figure 9 reports the effective Seebeck coefficient as a
function of temperature for the Bi pill prepared by
pressing the 170 nm Bi nanopowder. It can be seen
that the average absolute value of the Seebeck
coefficient S % -146 lV K-1 is higher than that of
bulk Bi [-72 lV K-1 (Hostler et al. 2007)] over the
whole range of temperatures investigated. The nega-
tive sign of the determined Seebeck coefficients shows
an n-type semiconductive behavior. The pills obtained
by the consolidation of the higher size Bi powders
obtained after 140 C (601 nm) and 160 C (202 nm)
mercaptide thermolysis exhibit no improvement in
Seebeck coefficient, which has similar values with
bulk Bi. These results could be interpreted in the frame
of the theory which predicts the largest enhancement
in the Seebeck coefficient in comparison to bulk Bi in
the case of quantum dots structures, with respect to
nanowires and thin film systems (Sun et al. 1999). It is
well known that the S value for bulk Bi is quite small
due to the equal concentrations of electrons and holes,
which lead to a nearly complete cancelation between
the positive and negative contribution to the Seebeck
coefficient, while the increase in the S value of
nanostructures is determined by the quantum confine-
ment effects on the electrical charge that result in an
enhanced electronic density of states near the Fermi
energy. In any case, until now, none of the investigated
Bi nanostructures (nanowires and thin films) with the
dimension of the constituent units similar to the size of
the prepared semiconductive nanopowder (D =
272 nm, r = 54 nm) have shown such improvement
in the Seebeck coefficient value. For example, liter-
ature reports S values similar to bulk Bi, in the range
70–80 lV K-1 at room temperature, for Bi nanowires
with the diameter of 240 and 480 nm (Nikolaeva et al.
2008; Lin et al. 2000).
Conclusions
The thermal decomposition of Bi(SC12H25)3 repre-
sents an effective preparation route of Bi
nanoparticles, with spherical shape and rhombohedral
crystal structure, offering the possibility to control the
grains size through: (1) the formation of an efficient
50 100 150 200 250 300
0
30
60
90
120
150
180
R (
× 0 1
3 Ω
)
T (K)
a
0,003 0,006 0,009 0,012
0
30
60
90
120
150
1/T ( k -1 )
( R
Ω
)
b
Fig. 8 Resistance R versus temperature T for the nanostruc-
tured Bi pill (prepared by room temperature uniaxial
compression of the Bi powder obtained from 180 C thermol-
ysis of the Bi mercaptide) at 1 V constant voltage (a);
Resistance R versus inverse temperature 1/T for the same
sample and linear curve fit in the 280–117 and 100–82 K
temperature range (b)
25 30 35 40 45 50 55 60 65 70-200
-180
-160
-140
-120
-100
-80
(S
µK
V1 -)
Temperature (°C)
Fig. 9 Variation in the Seebeck coefficient S of nanostruc-
tured Bi pills (prepared by room temperature uniaxial
compression of the Bi powder obtained from 180 C thermol-
ysis of the Bi mercaptide) with the temperature
1736 J Nanopart Res (2009) 11:1729–1738
123
steric barrier made of (SC12H25)2 molecules (capping
agent), which prevents the aggregation of particles
and reduce their growth (ii) the control of the
thermolysis temperature.
The investigation of the transport properties of the
Bi pills made of nanoparticles with the average
diameter of 270 nm shows an n-type semiconductor
behavior, with a direct band gap energy
Eg % 0.06 eV in 280–117 K temperature range and
Eg % 0.17 eV in 100–82 K, while the pills sintered
from the higher dimension nanoparticles exhibit a
semimetal behavior typical to bulk Bi. To the best of
our knowledge, the observed semimetal–semicon-
ductor transition for Bi grains size of about 270 nm is
the first report on quantum-like confinement effects in
Bi nanosystems with constituent units higher than
100 nm. Consistent with these results, the preli-
minary study on the thermoelectric characteristics of
the prepared Bi nanopowders shows: (1) larger value
for the effective Seebeck coefficient in the investi-
gated temperature range with respect to bulk Bi in the
case of the Bi pills made of 270 nm nanoparticles; (2)
no enhancement in S magnitude with respect to bulk
Bi for higher dimension systems.
The obtained improvement in the thermoelectric
characteristics with respect to bulk Bi even at grain
dimensions of hundreds of nanometres shows a great
potentiality of the Bi nanoparticles in thermoelec-
tricity, but much research is still needed before their
full potential is realized. Further research on tailoring
the process parameters for decreasing the nanoparti-
cles size and on the control of uniform morphologies
formation is currently underway. Further investiga-
tion on the thermoelectric characteristics, on
the origin of the semimetal–semiconductor transition
and of the Seebeck coefficient increment in abso-
lute value will be done to gain insight and
understanding about the real possibilities of Bi
nanopowders in reaching, by itself and in com-
pounds, the efficiency level required for
thermoelectric applications.
Acknowledgment The technical assistance of Dr. Manlio
Colella for SEM investigations is gratefully acknowledged.
References
Ashcroft NW, Mermin ND (1976) Solid state physics. Saunders
College Publishing, Philadelphia
Balan L, Schneider R, Billaud D, Fort Y, Ghanbaja J (2004) A
new synthesis of ultrafine nanometer-sized bismuth par-
ticles. Nanotechnology 15:940–944. doi:10.1088/0957-44
84/15/8/011
Black MR, Lin YM, Cronin SB, Rabin O, Dresselhaus MS
(2002) Infrared absorption in bismuth nanowires resulting
from quantum confinement. Phys Rev B 65:195417-1–
195417-9
Chen G, Zeng T, Borca-Tasciuc T, Song D (2000) Phonon
engineering in nanostructures for solid-state energy con-
version. Mater Sci Eng A 292:155–161. doi:10.1016/
S0921-5093(00)00999-0
Chen G, Dresselhaus MS, Dresselhaus G, Fleurial JP, Caillat T
(2003) Recent developments in thermoelectric materials.
Int Mater Rev 48:45–66. doi:10.1179/09506600
3225010182
Cho S, DiVenere A, Wong GK, Ketterson JB, Meyer JR,
Hoffman CA (1997) Thermoelectric power of MBE
grown Bi thin films and Bi/CdTe superlattices on CdTe
substrates. Solid State Commun 102:673–676. doi:
10.1016/S0038-1098(97)00063-X
Dresselhaus MS, Dresselhaus G, Sun X, Zhang Z, Cronin SB,
Koga T (1999) Low-dimensional thermoelectric materi-
als. Phys Solid State 41:679–682. doi:10.1134/1.1130849
Fu RL, Xu S, Lu YN, Zhu JJ (2005) Synthesis and character-
ization of triangular bismuth nanoplates. Cryst Growth
Des 5:1379–1385. doi:10.1021/cg049686n
Gallo CF, Chandrasekhar BS, Sutter PH (1963) Transport
properties of bismuth single crystals. J Appl Phys 34:144–
152. doi:10.1063/1.1729056
Goldsmid HJ (1964) Thermoelectric refrigeration. Plenum
Press, New York
Grass RN, Stark WJ (2006) Flame spray synthesis under a non-
oxidizing atmosphere: preparation of metallic bismuth
nanoparticles and nanocrystalline bulk bismuth metal. J
Nanopart Res 8:729–736. doi:10.1007/s11051-006-
9097-2
Gromov G, Kondratiev D, Rogov A, Yershova L (2001)
Z-meter: easy-to-use application and theory. Proceedings
of the 6th European workshop on thermoelectricity,
Freiburg, Germany, p 1
Heremans JP (2005) Low-dimensional thermoelectricity. Acta
Phys Pol A 108:609–634
Heremans J, Thrush CM (1999) Thermoelectric power of bis-
muth nanowires. Phys Rev B 59:12579–12583. doi:
10.1103/PhysRevB.59.12579
Heremans J, Thrush CM, Lin YM, Cronin S, Zhang Z,
Dresselhaus MS, Mansfield JF (2000) Synthesis and gal-
vanomagnetic Bismuth nanowire arrays: properties. Phys
Rev B 61:2921–2930. doi:10.1103/PhysRevB.61.2921
Heremans J, Thrush CM, Morelli DT, Wu MC (2002) Ther-
moelectric power of bismuth nanocomposites. Phys Rev
Lett 88:216801. doi:10.1103/PhysRevLett.88.216801
Hicks LD, Dresselhaus MS (1993a) Effect of quantum well
structures on the thermoelectric figure of merit. Phys Rev
B 47:12727–12731. doi:10.1103/PhysRevB.47.12727
Hicks LD, Dresselhaus MS (1993b) Thermoelectric figure of
merit of a one-dimensional conductor. Phys Rev B 47:
16631–16634. doi:10.1103/PhysRevB.47.16631
Hoffman CA, Meyer JR, Bartoli FJ, Di Venere A, Yi XJ, Hou
CL, Wang HC, Ketterson JB, Wong GK (1993)
J Nanopart Res (2009) 11:1729–1738 1737
123
Semimetal–semiconductor transition in bismuth thin
films. Phys Rev B 48:11431–11434. doi:10.1103/
PhysRevB.48.11431
Hostler SR, Qu YQ, Demko MT, Abramson AR, Qiu X, Burda
C (2007) Thermoelectric properties of pressed bismuth
nanoparticles. Superlattices Microstruct 43(3):195–207.
doi:10.1016/j.spmi.2007.10.001
Huber TE, Celestine K, Graf MJ (2003) Magnetoquantum
oscillations and confinement effects in arrays of 270-nm-
diameter bismuth nanowires. Phys Rev B 67:245317. doi:
10.1103/PhysRevB.67.245317
Isaacson RT, Williams GA (1969) Alfven-wave propagation in
solid-state plasmas. III. Quantum oscillations of the Fermi
surface of bismuth. Phys Rev 185:682–688. doi:10.1103/
PhysRev.185.682
Issi JP (1979) Low temperature transport properties of the
group V semimetals. Aust J Phys 32:585
Larsen TH, Sigman M, Ghezelbash A, Doty RC, Korgel A
(2003) Solventless synthesis of copper sulfide nanorods by
thermolysis of a single source thiolate-derivated precur-
sor. J Am Chem Soc 125:5638–5639. doi:10.1021/
ja0342087
Li Y, Wang J, Deng Z, Wu Y, Sun X, Fan S, Yu D, Yang PD
(2001) Bismuth nanotubes: a rational low-temperature
synthetic route. J Am Chem Soc 123:9904–9905. doi:
10.1021/ja016435j
Lin YM, Dresselhaus MS (2003) Thermoelectric properties of
superlattice nanowires. Phys Rev B 68:075304. doi:
10.1103/PhysRevB.68.075304
Lin YM, Sun X, Dresselhaus MS (2000) Theoretical investi-
gation of thermoelectric transport properties of cylindrical
Bi nanowires. Phys Rev B 62:4610–4623. doi:10.1103/
PhysRevB.62.4610
Lu M, Zieve RJ, van Hulst A, Jaeger HM, Rosenbaum TF,
Radelaar S (1996) Low-temperature electrical-transport
properties of single-crystal bismuth films under pressure.
Phys Rev B 53:1609–1615. doi:10.1103/PhysRevB.53.
1609
Nicolais LF, Carotenuto G (2008) Synthesis of polymer-
embedded metal, semimetal, or sulfide clusters by ther-
molysis of mercaptide molecules dissolved in polymers.
Mater Sci 1:1–11 (recent patents)
Nikolaeva A, Huber TE, Gitsu D, Konopko L (2008) Diameter-
dependent thermopower of bismuth nanowires. Phys Rev
B 77:035422. doi:10.1103/PhysRevB.77.035422
Nolas GS, Sharp J, Goldsmid HJ (2001) Thermoelectrics: basic
principles and new materials developments. Springer,
New York
Rogacheva EI, Grigorov SN, Nashchekina ON, Lyubchenko S,
Dresselhaus MS (2003) Quantum-size effects in n-type
bismuth thin films. Appl Phys Lett 82:2628–2630. doi:
10.1063/1.1567044
Seeger K (1985) Semiconductor physics. Springer, Berlin
Sun X, Zhang Z, Dresselhaus MS (1999) Theoretical modelling
of thermoelectricity in Bi nanowires. Appl Phys Lett
74:4005–4007. doi:10.1063/1.123242
Wang YM, Kim JS, Kim GH, Kim KS (2006) Quantum size
effects in the volume plasmon excitation of bismuth nano-
particles investigated by electron energy loss spectroscopy.
Appl Phys Lett 88:143106. doi:10.1063/1.2192624
Wegner K, Walker B, Tsantilis S, Pratsinis SE (2002) Design
of metal nanoparticle synthesis by vapor flow condensa-
tion. Chem Eng Sci 57:1753–1762. doi:10.1016/S0009-
2509(02)00064-7
Yonghui G, Jingying X (2005) Recent developments in low-
dimensional thermoelectric materials. Chem J 7:072019
(Internet)
Zhang Z, Sun X, Dresselhaus MS, Ying JY, Heremans JP
(1998) Magnetotransport investigations of ultrafine sin-
gle-crystalline bismuth nanowire arrays. Appl Phys Lett
73:1589–1591. doi:10.1063/1.122213
Zhao Y, Zhang Z, Dang H (2004) A simple way to prepare
bismuth nanoparticles. Mater Lett 58:790–793. doi:
10.1016/j.matlet.2003.07.013
1738 J Nanopart Res (2009) 11:1729–1738
123