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Properties of BC6N monolayer derived by first-principle computation: Influences of

interactions between dopant atoms

Nzar Rauf Abdullaha,b, Botan Jawdat Abdullahc, Chi-Shung Tangd, Vidar Gudmundssone

aDivision of Computational Nanoscience, Physics Department, College of Science, University of Sulaimani, Sulaimani 46001, IraqbComputer Engineering Department, College of Engineering, Komar University of Science and Technology, Sulaimani 46001, Iraq

cDepartment of Physics, College of Science, Salahaddin University-Erbil, Erbil, Kurdistan Region, IraqdDepartment of Mechanical Engineering, National United University, 1, Lienda, Miaoli 36003, Taiwan

eScience Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik, Iceland

Abstract

The properties of graphene-like BC6N semiconductor are studied using density functional theory taking into accountthe attractive interaction between B and N atoms. In the presence of a strong attractive interaction between B and Ndopant atoms, the electron charge distribution is highly localized along the B-N bonds, while for a weaker attractiveinteraction the electrons are delocalized along the entire hexagonal ring of BC6N. Furthermore, when both B and Natoms are doped at the same site of the hexagon, the breaking of the sub-lattice symmetry is low producing a smallbandgap. In contrast, if the dopant atoms are at different sites, a high sub-lattice symmetry breaking is found leading toa large bandgap. The influences of electron localization/delocalization and the tunable bandgap on thermal behaviorssuch as the electronic thermal conductivity, the Seebeck coefficient, and the figure of merit, and optical properties suchas the dielectric function, the excitation spectra, the refractive index, the electron energy loss spectra, the reflectivity,and the optical conductivity are presented. An enhancement with a red shift of the optical conductivity at low energyrange is seen while a reduction at the high energy range is found indicating that the BC6N structure may be useful foroptoelectronic devices in the low energy, visible range.

Keywords: BC6N, DFT, Electronic structure, Thermoelectric, Optical properties

1. Introduction

The optical behavior of 2D materials such as grapheneand silicene have unique tunability through controlling thegeometrical configuration, the local excitonic effects, thedoping density, and the defects levels [1, 2]. Graphenepossesses unique optical transitions and can absorb lightover a wide range of frequencies due to the presence ofthe linear dispersion at the Dirac point. It leads to anexhibition of extraordinary properties such as a constantoptical conductivity in the infrared regime and the gate-dependent optical absorbance [3, 4, 5]. The strong opticaltransitions of a monolayer graphene and the tunability bysimple electrical gating hold a promise for new applicationsin for infrared optics, optoelectronics, and the semiconduc-tor and optical industry [6, 7].Substitutional doping has been considered as an effective

method for tailoring the electronic and optical propertiesof monolayer graphene nanostructures. This is becausethe doping helps to tune the work function and the carrierconcentration of the nanostructure broadening the rangeof possible electronic and optical applications [8, 9]. Boron

Email address: nzar.r.abdullah@gmail.com (Nzar RaufAbdullah)

(B) atoms supply an electron to the graphene in the caseof a B-doped graphene increasing the Fermi energy dueto the low electronegativity of the B atom leading to a p-type semiconductor [10]. In contrast, the N atoms receiveelectrons from the graphene leading to an n-type semi-conductor because the electronegativity of an N atom ishigher than that of the carbon, C, atoms [11]. The op-tical response of both doped systems is sensitive to theirelectronic structure around the Fermi energy, and the ab-sorption spectrum undergoes changes in low energy range[12, 13]. In the case of BN-codoped monolayer graphene,the optical response evolves from the infrared to the ultra-violet region and shows significant anisotropy for differentpolarizations [14, 15]. Extra peaks in absorption spectrain addition to the π-π∗ transition peak have been foundfor BN-codoped graphene in the visible range of the elec-tromagnetic spectrum in the case of parallel polarization[16]. Furthermore, the optical response such as the dielec-tric function and the reflectivity have been investigated byvarying the concentration ratio of the BN-dopant atoms inmonolayer graphene, and significant red shift in absorptiontowards the visible range of the radiation at high dopingwas found [17].We believe that information on the influences of the in-

teraction between the B and the N atoms in a graphene

Preprint submitted to Elsevier June 2, 2021

structure on the optical response is still lacking. We there-fore consider the role of the interaction between the B andN dopant atoms in different configuration in a BN-codopedmonolayer graphene. We find that the imaginary and realpart of the dielectric function, the excitation spectra, therefractive index, the reflectivity, and the optical conduc-tivity are prominently modified due to the interaction be-tween the B and N atoms in the system.In Sec. 2 the BN-codoped monolayer graphene structure

is briefly over-viewed. In Sec. 3 the main achieved resultsare analyzed. In Sec. 4 the conclusion of the results ispresented.

2. Computational details

In the present work, the Quantum espresso (QE) pack-age code based on density functional theory (DFT) hasbeen used [18, 19]. The approach is based on an it-erative solution of the Kohn-Sham theory of DFT in aplane-wave set with Norm Conserving (NC) pseudopoten-tial [20, 21]. In the calculations, we consider the Perdew-Burke-Ernzerhof (PBE) functional of the GGA approach[22, 23, 24].Our model is a 2×2 supercell of monolayer sheets, where

the sheets are separated by 20 A along the perpendicu-lar direction to avoid an interaction between the layers.The plane wave cutoff energy is assumed to be 680 eV,and the Monkhorst-Pack scheme is used to form the Bril-louin zone sampling. Our pure and BN-codoped monolayergraphene are fully relaxed with a 8 × 8 × 1 k-mesh, andthe Hellmann-Feynman forces are less than 10−4 eV/A peratoms. The self-consistent field (SCF) calculations havebeen done with an 8 × 8 × 1 k-mesh, and a very densemesh of k-points, 100 × 100 × 1, is used to calculate theelectron density of states (DOS) of the system.The optical properties of the systems are evaluated us-

ing the QE package, and a large number of empty bandsis taken into account to evaluate the dielectric propertiesof the systems, ε(ω) = ε1(ω)+ iε2(ω), where ε1 and ε2 arethe real and imaginary parts of dielectric function. TheQE code gives us ε1(ω) and ε2(ω). One can then calcu-late the complex refractive index, N(ω) = n(ω) + i κ(ω),where n(ω) is the real part of refractive index and, κ(ω)the excitation coefficient, the imaginary part of N via [25]

n(ω) =1√2

(

[

ε21(ω) + ε22(ω)]

1

2

+ ε1(ω)

)1

2

, (1)

and

κ(ω) =1√2

(

[

ε21(ω) + ε22(ω)]

1

2

− ε1(ω)

)1

2

. (2)

The reflectivity at normal incidence of EM wave on thematerials can be obtained from n and κ by

R(ω) =

[

n(ω)− 1]2

+ κ2(ω)[

n(ω) + 2]2

+ κ2(ω). (3)

In addition, the optical conductivity can be computedfrom

σoptical =−i ω

4π

[

ε(ω)− 1]

. (4)

3. Results

In this section, we present the model, dispersion en-ergy, partial density of states, optical response, and ther-mal properties of the systems.

3.1. Model, Charge distribution, and Interaction energy

We consider three different configurations of BN-codoped graphene based on the distance between the Band N atoms. The electron charge distribution of all thethree different BN-codped graphenes are shown in Fig. 1.A schematic diagram of a hexagonal ring is presented inFig. 1(a) indicating the ortho-, the meta-, and the para-position [26, 27]. In the first configuration for our systems,the B atom is doped at an ortho-position and the N atomis at a meta-position identified as BC6N-1, and it’s elec-tron charge distribution is presented in (b). The other

(a)

x

y

B

N

C

C

C

C

BB

N

N

Figure 1: Schematic of a hexagonal structure (a) with the ortho-,the meta-, and the para-positions, and the electron charge densityfor BC6N-1 (b), BC6N-2 (c), BC6N-3 (d).

two configurations are BC6N-2 (c) and BC6N-3 (d) wherethe B atom is fixed at an ortho-position, but the N atomis moved to a para-, or a meta-position, respectively. Inthis way, we define three BC6N structures with differentdistances and interaction strength between the B and theN dopant atoms. The distance between the B and the Natom in BC6N-1, BC6N-2, and BC6N-3 is 1.41, 2.43, and2.8 A, respectively. The interaction energy between the Band the N atoms can be deduced from the total energyobtained via a SCF calculation [28, 29]. The interactiontype between the B and the N atoms is attractive as theinteraction energy has a negative sign [29]. Our calcula-tions indicate that the strongest interaction between the

2

B and the N atoms is in BC6N-1, which is expected asthe distance between the B and the N atoms is then theshortest for all the three configurations. The attractive in-teraction becomes weaker increasing distance between theB and the N atoms in both BC6N-2, and BC6N-3.The C, B and N atoms can be ordered from the higher

to lower electronegativity as follows: N > C > B. The Batom gives an electron to the C atoms, and the N atomreceives electrons from the C atoms due the difference intheir electronegativity [30]. Consequently, one can see thatthe electron charge distribution around the N atom is highand around the B atom is low comparing to the C atomsin all three configuration structures shown in Fig. 1. InBC6N-1, electrons are directly transferred from a B atomto an N atom leading to a higher electron charge distribu-tion in the B-N bonds near to the N atom comparing to theC-B and C-N bonds. This confirms the strong attractiveinteraction between the B and N atoms. In both BC6N-2and BC6N-3, electrons are not directly transferred from aB atom to an N atom, but an N atom receives electronsfrom the C atoms along all the three C-N bonds in thehexagonal, and a C atoms receives electrons from the Batoms. As a results, the electron delocalization along theC-C, C-B and C-N bonds is indicative for electron trans-port along the entire ring of the hexagonal structure. Thisgives rise a higher electron charge distribution betweenthe C-C, C-B, and C-N bonds of the BC6N-2 and BC6N-3structures comparing to the BC6N-1 structure.The stability of the structures can be determined by the

bonding between the C, B and N atoms, and the number ofC-C, C-B, C-N, and B-N bonds in a structure will affect itsstability. The binding energies of the C-C and B-N bondsare higher than those of the C-B and C-N bonds. So, astructure with a higher number of C-C and B-N bonds hasa higher binding energy [31, 32]. We can therefore confirmthat the BC6N-1 structure is the most energetically stablestructure.

3.2. Dispersion energy and PDOS

The electronic dispersion energy for the BC6N struc-tures (b-d) are displayed in Fig. 2 together with that ofpure graphene (a). The band structure of pure graphene(PG) is re-plotted for the sake of comparing it with theband structure of BC6N.A bandgap opens in the presence of the B and N atoms

reflecting the sublattice symmetry breaking. The bandgapis 0.13, 1.2 and 1.26 eV for BC6N-1, BC6N-2, and BC6N-3,respectively. In spite of the sublattice symmetry breaking,the Dirac cone of the BC6N structures remains preserved.One notices that the opening of a bandgap is larger for thestructures whose B and N atoms are doped at both A- andB-sites of the hexagonal ring such as BC6N-1 and BC6N-3.If the B and N atoms are doped at either a A- or a B-sitesuch as in BC6N-2, the bandgap is small indicating smallersymmetry breaking. This has been previously explainedand confirmed by Zhu and et al. [34], and Chang andet al. [35] where they have connected the opening up of

Figure 2: Electronic band structure of PG (a), and BN-codopedgraphene with BC6N-1 (b), BC6N-2 (c), and BC6N-3 (d) configura-tions. The Fermi energy is set to zero [33].

a bandgap to the number of π-bands or π-electrons, andaromaticity of the structures, respectively.They show that there is an odd number of π-electron or

π-bands if the B and N atoms are doped at either a A- or aB-site producing a small bandgap, while an even number ofπ-electrons is found for a structure with the B and N atomsdoped at a A- and a B-site leading to a larger bandgap. Wedraw the attention to that the dispersion energies of thesestructures are also presented in [33], where the mechanicaland thermal properties of the systems were investigated.The partial density of states (PDOS) for BC6N-1 (a),

BC6N-2 (b), and BC6N-3 (c) structures are demonstratedin Fig. 3. It can be seen from the PDOS that both the Band N atoms contribute to the opening up of a bandgap asthe PDOS of the B and N atoms have a high contributionaround the Fermi energy, and the maxima and minima ofthe valence and conduction band edge in the energy rangefrom −2.5 to 2.5 eV. The PDOS around the Fermi energyfor both the B and N atoms are pz-components indicatingthe π-states of a B and an N atoms. Furthermore, thedistance between the π-peak and the π∗-peak in the PDOSaround the Fermi energy for BC6N-1 and BC6N-3 is 3.289and 4.17 eV, respectively. These are larger than for BC6N-2, 3.068 eV, confirming the larger bandgaps of these twostructures.

3.3. Optical properties

It was seen in the previous section that the B-N dopantatoms can significantly tune the dispersion energy andPDOS of BC6N-monolayer structures. This modificationof the band structure and PDOS alter the optical prop-erties of systems. In this section, we focus on the mainresults of the dielectric function, the refractive index, thereflectivity, the electron energy loss spectra, EELS, and the

3

Figure 3: Partial density of state, PDOS, for the BC6N-1 (a), BC6N-2 (b), and BC6N-3 (c) configurations. The π-C and π∗-C are thePDOS due to pz-component of the C atoms, and π-B and π∗-N referto the contribution of pz-components of B and N atoms, respectively.The Fermi energy is set to zero.

optical conductivity of BC6N-monolayer structures emerg-ing due to the B and N dopant atoms. In general, theoptical response rather depends on the position of the Band N atoms doped at either the same or different sites inthe hexagonal structure of graphene.The imaginary part of dielectric function that expresses

the damping of the wave and the dissipation of energy ispresented in Fig. 4 with both parallel, E‖ (a) and per-pendicular, E⊥ (b), polarization of electric field vector ofexternal EM field. In order to clearly see the modificationof the optical response, we re-plot the dielectric functionof PG. In the case of E‖, two main peaks in imaginary partof dielectric function (black), ε2, are observed for PG at≈ 4.16 and 14.59 eV corresponding to the π-π∗, and σ-σ∗

transitions, respectively. The position of the first peakis close to the experimental value observed at 4.5 eV [36].The slight different in the peak position stems from the ne-glect of the interaction between the monolayer grapheneand the substrate in our calculation. The position of thesecond peak agrees very well with an experimental value,14.6 eV, obtained for free-standing monolayer graphene[37]. In addition to the two peaks, a strong peak at zeroenergy is seen due to the vanishing bandgap of PG. In thecase of E⊥ shown in Fig. 4(b), two peaks at 11.46, and14.83 eV for PG are seen associated with the π-σ∗, and

⊥b

Figure 4: Imaginary part of dielectric function, ε2, for PG (black),BC6N-1 (red), BC6N-2 (blue), and BC6N-3 (green) for both parallel,E‖ (a) and perpendicular, E⊥ (b), polarization of the electric fieldvector of the external EM field.

σ-π∗ transitions, respectively.In the presence of the BN-dopant atoms, the Fermi level

shifts and a bandgap is introduced at Fermi level so theenergy peak at 4.16 eV is prominently shifted. In additionto the two main peaks, a pronounced peak starting from1.2 (red), or 1.26 eV (green) is found in the visible regionfor BC6N-1, and BC6N-3, respectively, in the case of E‖.These energy values coincide with the bandgap of the twostructures, BC6N-1, and BC6N-3. So, the peak in the vis-ible region is caused by the opening up of a bandgap. Fur-thermore, a very strong peak at 0.1 eV is seen for BC6N-1indicative of the transition around small bandgap of thestructure. In general, for both E‖ and E⊥, the intensityof both main peaks is decreased for all three BN-codopedgraphene structures indicating a weaker damping or dis-sipation of the wave compared to PG. This reflects theincreased localization of the electrons occurring in thesestructures.The imaginary part of a refractive index (excitation

spectra) shown in Eq. (2), κ(ω), is related to the ab-sorption coefficient. The excitation spectra is qualitativelyvery similar to the imaginary part of the dielectric func-tion for both E‖ (a) and E⊥ (b) displayed in Fig. 5 forPG and BN-codoped graphene. Similar information canbe read from ε2, a significant red shift of the two mainpeaks of the excitation spectra towards the visible range ofthe electromagnetic radiation is observed for BN-codopedgraphene structures in the case of E‖, while a reduction inthe peaks without any pronounced shift is seen in the caseof E⊥. A peak caused by the opening up of a bandgap isalso seen for E‖.Further interesting information about optical response

is associated with the real part of dielectric function, ε1,which is presented in Fig. 6 for both parallel, E‖ (a) andperpendicular, E⊥ (b), polarization of the external electric

4

b ⊥

Figure 5: Excitation spectra (imaginary part of refractive index (κ),for PG (black), BC6N-1 (red), BC6N-2 (blue), and BC6N-3 (green)for both parallel, E‖ (a) and perpendicular, E⊥ (b), polarization ofelectric field vector of external EM field.

field. The ε1 is indicative of the ability of materials to storeelectrical energy related to the polarization. The value ofε1(0) is defined as a static dielectric constant or the valueof dielectric function at zero energy. The value of ε1(0) of

⊥

Figure 6: Real part of dielectric function, ε1, for PG (black), BC6N-1(red), BC6N-2 (blue), and BC6N-3 (green) for both parallel, E‖ (a)and perpendicular, E⊥ (b), polarization of the electric field vector ofan external EM field.

PG is 4.81, and 1.23 for E‖ and E⊥, respectively, whichis in a good agreement with the recent results of ε1(0)for both directions of polarized electric field calculated viaDFT [38], and in a fair agreement with [17] for E‖, where7.6 and 1.25 are obtained. The different values of ε1(0) forPG may be influenced by the number of bands taken in theDFT calculations or choice of pseudopotentials. When thevalue of ε1 is zero or very small, and ε2 is also small, theelectron energy loss spectra (EELS) shown in Fig. 7 startsto display a peak. This frequency is the plasma frequency

for collective electron oscillations, ωp, and the energy ofplasma frequency is defined as E = ~ωp. The energy ofthe plasmon oscillation for PG is found to be 4.25 and14.95 eV for E‖ and E⊥, respectively, agreeing very wellwith [39].In the presence of BN dopant atoms the value of ε1(0)

does not change appreciably for E⊥ polarization. How-ever, for E‖ polarization, the values of ε1(0) and ε1(ω) be-low 5 eV change significantly in the presence of B and Natoms doped at the A- and B-sites of the hexagon, BC6N-1, and BC6N-3. This is caused by the stronger symmetrybreaking of the sub-lattice symmetry when both the A-and B-sites are doped. The value of ε1(0) is reduced to3.19 and 2.39 for BC6N-1, and BC6N-3, respectively, inthe case of E‖ indicating the weaker ability of these struc-tures to store electrical energy at nearly zero-energy of anapplied electric field, and it is a slightly increased in thecase of E⊥ (inset of Fig. 6). On the other hand, for BC6N-2 where both the B and N atoms are doped at the A-or the B-sites resulting in less breaking of the sub-latticesymmetry, the value of ε1(0) is found to be 4.13, which isrelatively close to that of PG. We therefore see that theability of BC6N-2 to store energy is almost similar to PG.Furthermore, the plasma oscillation is only seen at 3.06 eVfor BC6N-2 in the case of E‖ while the plasma oscillationvanishes for both BC6N-1, and BC6N-3.

⊥

Figure 7: EELS for PG (black), BC6N-1 (red), BC6N-2 (blue), andBC6N-3 (green) for both parallel, E‖ (a) and perpendicular, E⊥ (b),polarization of electric field vector of external EM field.

The real part of the complex refractive index, n(ω),called the refractive index has been calculated from thereal and imaginary parts of dielectric function using Eq.(1). The refractive index defines the transmission effi-ciency of a system. The refractive index for PG (black),BC6N-1 (red), BC6N-2 (blue), and BC6N-3 (green) forboth parallel, E‖ (a) and perpendicular, E⊥ (b), polariza-tion of electric field is presented in Fig. 8. By comparingthe ε1 of Fig. 6 and the refractive index of Fig. 8, we seethat change trends of Fig. 6(a,b) are similar with those in

5

Fig. 8(a,b). This indicates that the influence of ε1 on n(ω)plays the leading role.

⊥b

Figure 8: Refractive index, real part of complex refractive index,for PG (black), BC6N-1 (red), BC6N-2 (blue), and BC6N-3 (green)for both parallel, E‖ (a) and perpendicular, E⊥ (b), polarization ofelectric field vector of external EM field.

The real part of refractive index of PG near to zero en-ergy, n(0), is found to be 2.19 for E‖ and 1.109 for E⊥. Inthe presence of the attractive interaction between the Band N atoms, no noticeable change is found correspondingto the n(0) value the peak positions for the E⊥ polariza-tion. In the case of E‖, the value of n(0) is observed tobe 1.78, 2.07, and 1.71 indicating that the refractive in-dex is reduced by 18.73%, 5.43%, and 21.92% for BC6N-1,BC6N-2, and BC6N-3, respectively, compared to PG. Thereduction ratio in the refractive index is higher for BC6N-1and BC6N-3 where both the B and N atoms are doped atdifferent atomic sites indicating less transmittance behav-iors near zero-energy.After obtaining the frequency dependent refractive in-

dex, we compute the reflectivity of the PG and BN-codoped graphene for both E‖ (a) and E⊥ (b) polarizationshown in Fig. 9. Two main peaks in the reflectivity ofPG are found at 4.32 and 14.76 eV for E‖, and two mainpeaks at 12.02 and 15.47 eV for E⊥. The peak positionsfor the reflectivity for PG in both directions of electricfield are well agree with [39]. For all three configurationsof the BC6N structures, the peak intensity of the reflec-tivity located between 10 to 20 eV for both directions ofE-field is reduced irrespective of the strength of the at-tractive interaction between the B and N atom, and theposition of the B-N atoms. The collective oscillations offree electrons and the valence electrons in the selected en-ergy range, 10-20 eV, are activated leading to the reduc-tion in reflectivity of the BC6N structures. In contrast,an enhancement of the reflectivity is seen for BC6N-2 inthe ultra violet (UV) region at a frequency of < 6.0 eV forE‖. This is in agreement with our previous explanation ofthe electron charge density distribution shown in Fig. 1,

b ⊥

Figure 9: Reflectivity for PG (black), BC6N-1 (red), BC6N-2 (blue),and BC6N-3 (green) for both parallel, E‖ (a) and perpendicular, E⊥

(b), polarization of electric field vector of external EM field.

where the electron delocalization in BC6N-2 is high lead-ing to higher reflectivity in the UV region. The reflectivityfor PG and all the BN-codoped structures is very small orclose to zero in the energy range 7-10 eV for both direc-tions of E-field while the refractive index is close to unityin this energy range.Last, the real part of the optical conductivity is shown

in Fig. 10 for both a parallel, E‖ (a) and a perpendicu-lar, E⊥ (b) electric field. The optical conductivities startswith a gap in the case of E‖, which is due to the semi-conducting properties of the BC6N-1 and BC6N-3. A verysmall zero value of optical conductivity of BC6N-2 is seenin the low energy range < 0.15 eV indicative of the smallbandgap of the structure. For PG, two main peaks inthe optical conductivity are seen at 4.33 and 14.75 eV forE‖ indicating the π-π∗ and σ-σ∗ transitions, respectively,and 12.02 and 15.47 eV for E⊥ showing π-σ∗ and σ-π∗,respectively. As we have mentioned, the peak intensityof the optical conductivity located between 10 to 20 eVfor both directions of an E-field is reduced irrespective ofthe strength of attractive interaction between the B andN atom, and the position of B-N atoms. In contrast, thepeak position in the energy range of 3-6 eV is shifted to-wards a lower energy for BC6N-1 and BC6N-2 due to theshrinking of bands along the Γ-K-M path as is seen in Fig.2(b-c). The peak here is due to optically active interbandexcitations through the Dirac point. Consequently, thetransition from π to π∗ needs less energy, and the peakappears at a lower energy. In addition, a slightly enhance-ment in the optical conductivity is seen for BC6N-2, whichwill be useful for applications in photovoltaic cells.

3.4. Thermal Properties

In this section, thermal properties such as the electronicthermal conductivity (a), the electrical conductivity (b),the Seebeck coefficient (c), and the figure of merit (d)

6

b ⊥

Figure 10: Optical conductivity, Re(σoptical) for PG (black), BC6N-1 (red), BC6N-2 (blue), and BC6N-3 (green) for both parallel, E‖

(a) and perpendicular, E⊥ (b), polarization of electric field vector ofexternal EM field.

are investigated and displayed in in Fig. 11. The ther-mal calculations are carried out in the temperature rangeof T = 20-150 K where the electron contribution to thetransport is dominant and the phonon participation canbe neglected because the electron and lattice temperatureare decoupled in this temperature range [40, 41]. Boltz-Trap software can be thus used to investigate the thermalproperties under the above condition [42]. The Boltztrapis based on the Boltzmann theory which is used to cal-culate the semiclassical transport coefficients. The codeuses a mesh of band energies and is interfaced to the QEpackage [43].

d

Figure 11: Electronic thermal conductivity, k (a), electrical conduc-tivity, σ (b), Seebeck coefficient, S (c), and figure of merit, ZT (d)versus energy are plotted PG (black), BC6N-1 (red), BC6N-2 (blue),and BC6N-3 (green).

The thermal efficiency of a material or a device is char-acterized by the figure of merit, ZT = (S2 σ/k)T , whereS is the Seebeck coefficient, σ is the electrical conductiv-ity, T is a temperature, and k is the electronic thermalconductivity. It has been shown that a material with highof ZT should have high S, and σ, and low k with a speci-ficity temperature [44]. Based on this, we can see that

the BC6N-1 and BC6N-3 have the highest ZT among allinvestigated structures in which the high symmetry break-ing plays an important role. The high value of ZT hererefers to the relatively larger bandgap and asymmetry inthe density of states of these two structures around theFermi energy which give rise to a lack of thermal electronsin the bandgap range. It thus leads to a decrease in thek (a) and an increase in the S (c) around the bandgap,which are the conditions to obtain the high value of ZT .The high value of ZT of a material is useful to improvethermoelectric devices such as solar cell.

4. Conclusions

To conclude, we have used density functional theory tostudy the structural, thermal, and optical properties ofmonolayer graphene doped with boron and nitrogen atomswhere the influences of an attractive interaction betweenthe dopant atoms are highlighted. We have assumed fewatomic configurations forming different BC6N structuresbased on the interaction between the B and N atoms. Wehave found that the static dielectric constant is decreased,and the plasmon oscillation is reduced or vanishes in thepresence of an attractive interaction between the B andN atoms compared to the pristine monolayer graphene.Furthermore, the refractive index indicating the transmit-tance behavior is enhanced in the case interactions be-tween the B and N atoms in the low energy ranges whilethe reflectivity is decreased. In addition, a high Seebeckcoefficient and a high figure of merit have been found forBC6N where the B and N atoms are doped at differentatomic sites of the hexagon structure. We can thus con-firm that the thermal and the optical properties of BC6Ncan be improved by controlling the interaction between thedopant atoms which may be useful for thermoelectric andoptoelectronic devises.

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