DRC

Pasos◦ Lythography◦ Oxide growth◦ Photosensitive material◦ Mask◦ Exposure◦ Developing◦ Etching◦ Rinse

Wet and dry

Original level of Si

A) isotropic; B) anisotropic

Difussion◦ Unlimited source Limited source

Ion Implantation

Objective: maximum yield minimizing area Rule types◦ Width◦ Spacing◦ Separation◦ Extension◦ Overlap

General

Active Wells PolySi diffusions

Metal Contacts

Vias Metal 2 PADS