Pasos◦ Lythography◦ Oxide growth◦ Photosensitive material◦ Mask◦ Exposure◦ Developing◦ Etching◦ Rinse
Wet and dry
Original level of Si
A) isotropic; B) anisotropic
Difussion◦ Unlimited source Limited source
Objective: maximum yield minimizing area Rule types◦ Width◦ Spacing◦ Separation◦ Extension◦ Overlap
Active Wells PolySi diffusions
Vias Metal 2 PADS