Commercial & compact TeraHertz sources - IRAMIS - CEA

Commercial & compact

TeraHertz sources

J o u r n é e s c i e n t i f i q u e C E A – 1 1 O c t o b r e 2 0 1 9

Bringing state of the art, to the industry

The THz radiation

• Non–ionizing radiation, safe for health• Penetrating non-polar, non-metallic material• Sensitive to water content

Health care

Industry

Security/Defense

Science

Frequency (Hz)10171016101510141013101210111010109108107

radioWaves microWaves TeraHertz0.5–10 THz30–600 μm

IR X-rayVIS UV

Lytid SAS – Paris, France 2

The THz gap is closing

Electronics PhotonicsTeraHertz

0.5–10 THz30–600 μm




0.5–10 THz30–600 μm

Lytid SAS – Paris, France

Electronic solid state oscillator and multipliers

Free Electron Lasers

4



0.5–10 THz30–600 μm



Free Electron Lasers Laser driven THz emitters

Optically pumped gas laser

Quantum Cascade Laser

5



TeraSchottky


TeraCascade

Electronics Photonics


TeraHertz

Semiconductor Laser

Bipolar semiconductor laser

H

B

e-

h+

Conduction band

Valence band

λ : ~ 300 – 3000nm



Innovation of Quantum cascade laser

H

B

e-

h+

Conduction band

Valence band


λ : ~ 300 –

3000nm

J. Faist et al., Science, 264, 5158, p 553-5561994 R. Köhler et al., Nature, 417, 6885, p 256-159 2002

λ : ~ 60 – 150μm2-5 THz

e-

e-

H

B

Conduction band

τl

τu

τu > τl

Population inversion

Unipolar semiconductor laser

Resonant

tunnelling

Injection barrier

e -e scattering



H

B

e-

h+

Conduction band

Valence band


λ : ~ 300 –

3000nm

J. Faist et al., Science, 264, 5158, p 553-5561994 R. Köhler et al., Nature, 417, 6885, p 256-159 2002

λ : ~ 60 – 150μm2-5 THz

e-

e-

H

B

Conduction band

τl

τu

τu > τl

Population inversion

Unipolar semiconductor laser

Resonant

tunnelling

Injection barrier

e -e scattering

GaAs/AlGaAs AR: 10-15 μm



Advantages :

• Direct emission of THz radiation

Drawback:

• Cryogenic operating temperatures

GaAs/AlGaAs AR: 10-15 μm


QCL THz waveguides

Single plasmon waveguide

10µmMetal

S-I GaAs substrate (thinned to 200µm)

n+ doped layer

240µm

- +

0 50-50

(deg)

403020100

-10-20-30-40

φ(d

eg)

n+ doped layer

S-I GaAs substrate (thinned to

200µm)

Metal

Metal

MetalActive region


QCL THz waveguides

Single plasmon waveguide Metal-metal waveguide

10µmMetal

S-I GaAs substrate (thinned to 200µm)

n+ doped layer

240µm

n+ GaAs substrate

10µm

Metal100µm

- +

0 50

(deg)

φ(d

eg)

100

403020100

-10-20-30-40

50

0 50-50

(deg)

403020100

-10-20-30-40

φ(d

eg)

+ -

Metal

Metal

n+ GaAs substrate

Active region

n+ doped layer

S-I GaAs substrate (thinned to

200µm)

Metal

Metal

MetalActive region


Lytid QCL solution

TeraCascade1000

• Single plasmon waveguide• Cryogenic free cooling: stirling motor to 40 K• mW output power

TeraCascade100

• Metal-metal waveguide• Cryogenic cooling: NL to 77 K• μ W output power


TC1000: frequencies & architectureO

utp

ut

po

wer

(mW

)

Frequency (THz)

0

0,5

1

1,5

2

2,5

3

2.5 2.9 3.3 3.8 4.3 4.7

14



utp

ut

po

wer

(mW

)

Frequency (THz)

0

0,5

1

1,5

2

2,5

3

2.5 2.9 3.3 3.8 4.3 4.7

Fabry-Perot laser @ 2.5 THz

15



utp

ut

po

wer

(mW

)

Frequency (THz)

0

0,5

1

1,5

2

2,5

3

2.5 2.9 3.3 3.8 4.3 4.7

Fabry-Perot laser @ 2.5 THz DFB @ 4.7 THz

16


TC1000: Beam profile and power stability

0.38 mm

Beam profile Single Plasmon

1% over 1 hours2% over 12 hours

M2 =1,17

Power stability @ 2.5 THz


TC100: beam profile

0 50

(deg)

φ(d

eg)

100

40

30

20

10

0

-10

-20

-30

-40

50

Beam profile Metal metal

Beam profile Metal metal integrated

in TC100



TeraSchottky


TeraCascade

Electronics Photonics


TeraHertz


Sub-THz electronic sources

X610-15 GHz →

60-90 GHz

Power amplifier60-90 GHz

RF Synthesizer

SyntesizerSiGe

0 to 25 GHz

Multiplier and amplifier HMT transistors

GaN, GaAs

20

X2 150GHz

X2 300GHz

X2 600GHz

Subsequent multipliersSchottky diodes technology


Schottky Diodes for THz technology

Metal-semiconductor junction


Schottky Diodes for THz technology

E- beam lithography


Lytid sub-THz source

X2 150GHz

X2 300GHz

X2 600GHz

multiplier Power amplifier

RF Synthetizer

TeraSchottky



0

100

200

300

400

60 65 70 75 80

75 GHz base unit

0

50

100

150

120 130 140 150 160

150 GHz extension

0

5

10

15

20

25

30

35

240 260 280 300 320

300 GHz extension

0

0,5

1

1,5

2

2,5

3

540 560 580 600 620 640

600 GHz extensionPower VS Frequency


Application: Static imaging acquisition

600GHz / 2,5THz PP sample

Front Side

Back Side

600GHz 2.5THz


From static to real time imaging

De quelques minutesÀ quelques heures…

TDS

40 ms

TeraCascade + camera


3D reconstruction


Stress evaluation in opaque materials

Crossed polarization in transmission

Combination Image

Reflection ImageTransmission Image

PP sample


Still young, playing with big

« …Lytid a des compétences et équipements suffisants en THz… [et] …constitue un partenaire crédible pour piloter l’exploitation industrielle et commerciale des résultats du projet. »

Lytid SAS – Paris, France Présentation confidentielle 34

A new light is coming…

Lytid SAS

10 rue A. Domon et L. Duqet

Université Paris Diderot – Bât. Condorcet

75013 Paris - FR

@ : [email protected]

: +33 6 99 37 50 53

www.lytid.com

Commercial & compact TeraHertz sources - IRAMIS - CEA

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