Brazilian facilities to study radiation effects in electronic devices

RADECS 2013 Proceedings – [PB-2]

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Abstract— Three facilities in Brazil are being prepared and upgraded to test and to qualify electronic devices regarding their tolerance to TID and SEE: a 60 kV X-ray source, a 1.7 MV Pelletron accelerator for low energy proton beams and an 8 MV Pelletron accelerator that produces heavy ion beams. MOSFET transistors were exposed to 10-keV X-rays and to 2.4 MeV protons extracted into air. During irradiation, characteristic curves were continuously measured to monitor the circuit’s behavior relative to the accumulated dose. 12C, 16O, 28Si, 35Cl and 63Cu heavy ion beams were also used mostly to test the experimental setup, and verify beam uniformity at low fluence conditions, equilibrium charge state, and carbon stripper foil durability. To test the setup for SEE, a pMOS transistor was irradiated with 63 MeV 63Cu ions scattered at 15° by a 275 μg/cm2 gold foil. The setups are now available for TID and SEE studies in electronic devices. Index Terms— Proton and Heavy Ion Beams, Single Event Effect, Total Ionization Dose, X-Ray.

I. INTRODUCTION LECTRONIC circuits are strongly influenced by radiation and the need for radiation hardened devices is growing for

applications in hazardous environments such as space, nuclear reactors and high energy particle accelerators [1]. To understand the physical phenomena responsible for changes in devices exposed to ionizing radiation, several kinds of radiation should be considered, among them heavy ions, neutrons, protons, gamma and X-rays. Radiation effects on electronic circuits are usually divided into three main categories: Total Ionizing Dose (TID), a cumulative effect that changes the response of electronic devices; Single Event

Manuscript received September 09, 2013. This work was supported by the

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP), Brazil, Conselho de Desenvolvimento Científico e Tecnológico (CNPq), Brazil, Centro de Tecnologia da Informação Renato Archer, Campinas, Brazil, and Centro Universitário da FEI, S.B. do Campo, Brazil.

N.H. Medina, V.A.P. Aguiar, F. Aguirre, N. Added, E.L.A. Macchione and M.H. Tabacniks are with the Instituto de Física da Universidade de São Paulo, São Paulo, Brazil (phone: 55-11-3091-6763; fax: 55-11-3031-2742; e-mail: [email protected], [email protected], [email protected], [email protected], [email protected], [email protected]).

L.E. Seixas, Jr., is with the Centro de Tecnologia da Informação, Campinas, Brazil. (e-mail: [email protected]).

J.A. Oliveira, M.A G. Silveira, R. Giacomini, M.A.A. de Melo, and R.B.B. Santos are with Centro Universitário da FEI, São Bernardo do Campo, Brazil (e-mail: [email protected], [email protected], [email protected], [email protected], [email protected] ).

Effects (SEE), a transient effect which can deposit charge directly into the device and disturb its properties, or even cause permanent failure of the device; and Displacement Damage (DD) which can change the arrangement of the atoms in the lattice [2,3]. TID is one of the most common effects and is responsible for degradation in some parameters of CMOS electronic devices, such as threshold voltage oscillation, increase of the sub-threshold slope and increase of the off-state current, for instance. These effects are mainly related to the creation of electron-hole pairs in the oxide layer, changing operation mode parameters of the electronic device, and trapping of charge carriers either in the oxide layer or in the Si/SiO2 interface. These effects are studied mainly with electromagnetic radiation and proton beams. To study Single Event Effects (SEE), it is necessary to hit directly the active region of the electronic device with a sufficiently high energy heavy ion beam to create a high density of charge carriers within the sensitive volume. Different Linear Energy Transfer (LET) values are used to evaluate device sensibility.

Our group has started a research project to arrange facilities to provide X-rays, proton, and heavy ion beams, produced in electrostatic tandem accelerators, in order to investigate radiation effects in electronic devices. Initial tests for TID effects were performed using 10-keV X-ray and external proton beams since their range allows the study of several thicknesses of oxide layers. In parallel, an experimental setup for SEE studies was developed to use low intensity external heavy ion beams to probe the samples.

II. X-RAY EXPERIMENTAL SETUP To study the radiation effects of X-rays, a Shimadzu XRD-

7000 X-ray diffraction setup was used to produce 10 keV effective energy photons with different dose rates and total doses. In Figure 1, the linearity of the dose as a function of the applied current in the copper X-ray source is shown. The exposure dose in our experimental setup was estimated with an ionization chamber and the X-ray dose rate in silicon was calibrated using air and silicon mass attenuation coefficients [4]. The effective energy was measured using aluminum foils of different thickness and calculating the half–attenuation Al layer. In fact, 10 keV X-ray radiation is a very convenient source of radiation owing to its higher charge yield compared to protons, alpha particle, and heavy ions [5], as well as its affordability compared to a particle accelerator.

Brazilian Facilities to Study Radiation Effects in Electronic Devices

N.H. Medina, M.A.G. Silveira, N. Added, V.A.P. Aguiar, F. Aguirre, R. Giacomini, Member, IEEE, E.L.A. Macchione, M.A.A. de Melo, J.A. Oliveira, R.B.B. Santos, Member, IEEE, L.E. Seixas Jr., and

M.H. Tabacniks.

E

Proc. RADECS 2013 PB-2 1/7

978-1-4673-5057-0/13/$31.00 ©2013 IEEE


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Fig. 1. Dose rate in Roentgen per minute as a function of the current in the copper X-ray source. This higher charge yield in the case of X-rays is achieved because the photon-matter interaction is weaker than the ion-matter interaction. An ion traversing the oxide generates, along its path, a dense column of electron-hole pairs that suffer initial recombination with a high probability [5]. On the other hand, when photons pass through matter, they generate pairs in a sparsely distributed fashion. These photogenerated pairs, separated by more than the thermalization distance, have a lower chance of recombining [5]. X-ray photons generate sparsely distributed electron-hole pairs, which reduces recombination by increasing electron and hole yields. The correlation between X-ray and proton radiation-induced degradation has been observed for proton energies of 20 to 200 MeV and also in the radiation-induced degradation of field oxides in bulk-silicon technologies [6,7]. Ten keV effective energy X-rays are very convenient to study radiation effects in electronic devices since these photons generate secondary electrons with a range of the order of 500 nm, which is comparable to the transistor field oxide thickness. The effects generated by these photons are comparable also to the effects provoked by 60Co sources which emit gamma rays with energies of the order of 1.25 MeV.

Fig. 2. Total ionizing dose effects on the current-voltage characteristic curve of a rectangular-gate transistor subjected to 10 keV X-ray radiation. Figure modified from Ref. [8].

In Figure 2, drain current versus gate-voltage characteristic curves for a commercial n-MOSFET transistor irradiated with a 10-keV effective energy X-ray are shown [8]. It is possible to observe, after a dose of 25 Mrad, a positive shift in threshold voltage. However, increasing the accumulated dose to 100 Mrad, there is a slight increase of the current, and a decrease of the threshold voltage, indicated by the small shift to the left. In this case, it seems that the effect of the charged traps in the Si/SiO2 interface mitigates the effect of the positive charge trapped in the oxide. More information about these tests can be found elsewhere [8].

III. EXTERNAL PROTON BEAM EXPERIMENTAL SETUP In order to study TID radiation effects in electronic devices subjected to proton beams, we have used a 2.6 MeV proton beam generated by the 1.7 MV 5SDH Pelletron accelerator of the University of São Paulo. The study of electronic devices exposed to 1 to 6 MeV protons leads to the possibility of generating Displacement Damage effects, which influences the charge carrier mobility and modifies the device´s electronic characteristics [7]. The devices under test (DUT) were mounted in an external beam facility and DUT positioning was made with the aid of a video camera and a two-laser tracking system focused on the spot of the external beam. Due to energy losses in the aluminum exit window and the air thickness, the proton beam energy hitting the device was of the order of 2.4 MeV. Beam current intensities of 1.0 to 10.0 nA were used to test MOSFET devices which were especially prepared without the plastic shield, allowing the creation of defects in the oxide layers. During the irradiation procedure, drain current versus gate voltage characteristic curves were measured using a high speed data rate PXI module acquisition system. Moreover, before and after the irradiation procedure, the devices were electrically characterized by using a semiconductor device analyzer. The transistors were exposed up to a 3.2 Grad radiation dose.

Fig. 3. Total ionizing dose effects on the current-voltage characteristic curve of a transistor subjected to 2.4 MeV external proton beam, maintaining the drain source voltage at 100 mV. Figure modified from Ref. [8]. In Figure 3, drain current versus gate voltage characteristic curves are shown. The results show that, with low doses, there is a shift of the threshold voltage to the lower VGS, indicating that charge may be trapped in the gate-oxide. For higher doses, the shift is to the higher VGS, implying that the charges


RADECS 2013 Proceedings – [PB-2] trapped at the Si/SiO2 interface are now radiation effects [8]. These results are in agliterature [2,3]. More information about the teproton beams can be found elsewhere [8].

IV. HEAVY ION EXPERIMENTAL S

In order to study Single Event Effects (SEdevices a specific experimental setup was dsetup decapsulated Integrated Circuits areheavy ion beams, such as 12C, 16O, 19F, 28Si, energies produced by the 8 MV Pelletron aUniversity of São Paulo. To achieve the vfluxes, in the range from 102 to 105 recommended by the European Space Agenctests [9], a standard Rutherford scattering sethis setup, the primary heavy-ion beam of tscattered by a thin gold foil positioned atscattering chamber. The scattering cross secproportional to the incident energy and to thescattering angle’s sine, and the number of scadependent on the scattering cross section andangle, the number of scattering nuclei, thickness, and the beam intensity. Thereforescattering setup permits the variation of up tthe number of particles incident on the DUT in beam current, irradiation angle or gold foeven higher versatility, an exit window can bscattered particles in air, at 15º or 45º, so cannot be irradiated in vacuum still can be s4, a schematic view of the 30B beam linPelletron accelerator is shown.

Fig. 4. Schematic view of the 30B scattering chamber ofaccelerator.

The exit window can be made of aluminuthe choice between these two materiamechanical resistance and energy loss of window. For external beam use, ion beams aup to 28Si, due to high energy losses fonumbers. The measurement of beam flux anby means of a surface barrier detector pvacuum chamber, usually at a symmetricNIM/CAMAC acquisition electronics. Energions hitting the DUT and beam uniformity memade using a silicon surface barrier detectirradiation position in air. The first tests wer

dominating the greement with the ests with external

SETUP EE) in electronic

developed. In this e irradiated with

35Cl, and 63Cu at accelerator of the very low particle

particles.cm-2s-1, cy (ESA) for SEE etup was used. In the accelerator is t the center of a ction is inversely e fourth power of attered particles is d also on the solid

related to foil e, the Rutherford to a 102 factor in either by changes oil thickness. For be used to extract that circuits that

studied. In Figure ne of the 8 MV

f the 8 MV Pelletron

um or mylar, and als depends on

particles in the are available only or higher atomic nd energy is done placed inside the cal angle, using y calibrations for easurements were tor placed at the re performed with

external ion beams of 12C, 16O, and from 20 to 74 MeV, yielding linevalues from 4 to 14 MeV/mg/cm2. Bfoil were of approximately 3100 particles.cm-2s-1 incident on the and 28Si Rutherford scattering particvacuum and in-air are shown.

10 15 20 25 300

1000

2000

3000

4000

5000

28Si 73,5 MeV intern 28Si 73,5 MeV extern 16O 40 MeV internal 16O 40 MeV externa 12C 40 MeV internal 12C 40 MeV externa

Cou

nts

Energy (

Fig. 5. 12C, 16O and 28Si scattered ion ssilicon detectors placed at 45o. Incident belegend. Even in vacuum, the scattering at 45is responsible for a high energy loss.

The available negative ions prNegative Ions by Cesium SputterLaboratory are: 1H, 6,7Li, 10,11B, 12,

35,37Cl, 48Ti, 63,65Cu and 107,109Ag. heavy ion beams is under developvalues for some of the availablefunction of the range in silicon.

101

10

100

LET

(MeV

/mg/

cm²)

Range (μ

Fig. 6. LET as a function of range in silico

The positive voltage of the 8 Pelletron accelerates negative ions very thin carbon foils (~μg/cm2) to negative ions transforming them intThe positively charged beam exit

3

28Si, with energies ranging ear energy transfer (LET) Beam currents on the gold 00 nA, yielding circa DUT. In Figure 5, 12C, 16O cle spectra for detector in-

35 40 45 50

nal (x10)nal (x10)

al

al

(MeV)

spectra for in-vacuum and in-air eam energy is indicated in graph 5º of 28Si ions in a thick gold foil

roduced by a Source of ring (SNICS) [10] in our 13C, 16,17,18O, 19F, 28,29,30Si, The production of other

pment. In Figure 6, LET beams are plotted as a

100

μm)

12C 48 MeV 19F 64 MeV 28Si 72 MeV 48Ti 88 MeV 63Cu 88 MeV

on for some available ions.

MV São Paulo Tandem in the first stage and uses extract electrons from the

o a positive charged beam. s the stripper foil and is



4

accelerated to a maximum energy of (n+1)8 MeV, where n is the number of electrons extracted from the ions passing through the carbon foils. In order to measure the lifetime of the carbon foils, 7.0 MV 63Cu heavy ions were accelerated. With such a heavy ion beam, the carbon foils, produced in our target laboratory, last for approximately 20 minutes with good transmission efficiency. After this period, the beam current decreased by a factor of 10. In order to increase the carbon foil lifetimes for heavy ion beams, we are installing an AC/DC arc-discharge system to produce more efficient stripper carbon foils [11,12]. It is known that with this arc-system, the carbon foil lifetime increases by at least one order of magnitude. For more information about carbon stripper foil lifetimes see Ref. [13]. The positive charge state defines the beam final energy in a Tandem Electrostatic Accelerator. The equilibrium charge state distribution in carbon foils usually is estimated by a code based on semi-empirical formulas developed for the most probable charge state as a function of projectile atomic number Z and velocity [14]. To verify the real equilibrium charge state distribution, the beam current for different charge states of 63Cu ions accelerated with 7.0 MV, was measured after the analyzing magnet (ME200). In Table 1, measured heavy ion intensity, given in percentage of particles, and the predictions are shown. The most frequently measured charge state is 10+ which is two equilibrium charge states higher than the estimated value, indicating that it is possible to use beams of a higher energy, without a significant loss in beam intensity.

To measure the beam uniformity, a 50 MeV 16O primary beam was used with a mylar foil exit window of about 1.0 mg/cm2 mounted at an angle of 15º relative to the incidence direction and 45º relative to the reaction plane was also used in order to increase the beam energy and the azimuthal angle non-uniformity of the scattered particle intensity. The reason for increasing the non-uniformity was to determine if the system was adequate for experiments even in the worst configuration. 16O beam particle spectra for different positions of a surface barrier detector mounted in air, just in front of the exit window with a 0.5 mm Ta collimator, were recorded. In Figure 7, 16O elastic peak areas were plotted. Data acquisition for each experimental point was made for approximately 7 minutes. In this figure, one can observe that, for the central portion of the external beam, where the DUT may be located, the variations in intensity are smaller than 10%, satisfying the protocol requirements [15,16,17].

TABLE I 7.0MV 63CU EQUILIBRIUM CHARGE STATE DISTRIBUTION IN CARBON FOIL

63Cu Charge State

Beam intensity (% particles)

Estimated equilibrium charge state (% particles)

7+ 3.8(2) 18.9 8+ 13.5(7) 27.7 9+ 26.7(13) 24.1 10+ 36.0(18) 13.4 11+ 19.7(9) 4.7 12+ 0.30(2) 1.1

-4 -3 -2 -1 0 1 2 3 40,04

0,05

0,06

0,07

0,08

0,09 16O 50 MeV

Exte

rnal

cou

nts/

Inte

rnal

cou

nts

Position (mm)

Fig. 7. 50 MeV 16O scattered ions in-air uniformity measurements. Data

were normalized with a fixed monitor detector placed at 45o inside the chamber. The zero position corresponds to the center of the window, and the position where the intensity falls rapidly is taken to be the edge of the window.

In order to facilitate complying with the ESA/SCC requirements, a new beam line is under construction to provide a low-flux, high-uniformity beam for in-vacuum irradiations with the 8 MV Pelletron electrostatic accelerator. Higher linear energy transfers will be available in the near future with the new Superconducting Linear Accelerator of the University of São Paulo, also under construction.

V. ELECTRONIC INTERFACE FOR SEE DETECTION One of the experimental assemblies for observation of

single event effects (SEE) is being developed in some steps, from the simplest circuit, just to detect the event, to the complete current pulse analysis. One way of sensing with low cost has been implemented with p-channel metal-oxide-semiconductor field effect transistors (MOSFET) as the radiation sensor [18]. A property of these transistors is the variation of the drain current (ID) when irradiated. The design characteristics of the p-channel MOSFET transistor influence the detection of radiation, and the construction parameters, such as gate oxide thickness, are very relevant for the detection sensitivity [19].

A single-event effect was detected in a pMOS transistor (3N163) through an auxiliary electronic circuit. The transistor had its package partially removed, allowing the ion beam to directly hit the surface of the chip. The DUT was irradiated with a 63 MeV 63Cu beam, scattered at 15o from a 275 μg/cm² gold target. The 58.5 MeV scattered ions hit the DUT, with a corresponding LET of about 24 MeV/mg/cm². A beam current of 22 nA, corresponding to a mean flux of about 10⁵ particles.cm-²s-1 and producing a total fluence of 4.2x10⁸ particles.cm-², was used. The transistor was biased with gate-to-source voltage (VGS) of -0.13 V and drain-to-source voltage (VDS) of -4.5 V. The drain current was amplified through a LM324 operational amplifier and sampled with a 12-bit successive approximation analog-to-digital converter, preceded by a sample-and-hold circuit. It is a simple and very reliable circuit. The main drawback is the long sampling interval (174 μs), compared to the expected event times. The delivery of the ion energy to the silicon body lasts a few


RADECS 2013 Proceedings – [PB-2] femtoseconds [20], creating an elongated colhole pairs. These carriers recombine or drift,applied electric field. The timing of this cdepends on the strength of the electric fieldcarrier mobility, on the recombination rate, location, relative to the device structure, andphysical dimensions. Preliminary resultnumerical simulation of the DUT under the sathe experimental assembly, using a SILVACdevice simulator, indicate that the electrical cSEE lasts a few nanoseconds. The detectionSEE can be determined by the ratio betduration and the sampling interval. ConsiderSEE duration and the experimental samp0.02% of the SEEs could be registered. Alseem to be a low coverage, some events werdifferent intensities.

The intensity variation of the sensed probably related to the ion path inside the dshows a clear negative pulse caused by theincidence. Some other lower intensity evenpresent in the noisy region of the signal, breliably identified by removing the interferingis mostly caused by electromagnetic interfereexperimental facility, particularly the 60 Hz ithe vacuum pumps, and other electric devisignal can be observed in the time-zoomed vAn improved data analysis will be carried oudigital filtering to the acquired data. As a experimental assembly, a new circuit with adigital converter will allow sampling rates of increasing the events coverage to almost 100a Gsamples/s converter will be used to reshape.

Fig. 8. Current pulse at the operational amplifier outp

event. a) Acquired data, containing a SEE pulse in two b) Time-zoomed view of the pulse and the 60 Hz interfer

a)

b)

Vol

tage

at O

p. A

mp.

Out

put (

mV

)

Vol

tage

at O

p. A

mp.

Out

put (

mV

)

Sample count

Sample count

lumn of electron-, according to the carrier movement d, on the material on the ion path d on the device’s ts obtained by ame conditions of CO ATLAS [21]

consequences of a n probability of a tween the event ing the simulated

pling rate, about lthough this may re observed, with

current pulse is device. Figure 8a e 63Cu heavy ion nt effects may be but will only be

g noise. The noise nce present at the interference from ices. This 60 Hz iew of Figure 8b. ut soon, applying next step of the

a flash analog-to-f 120 Msamples/s, 0%. Furthermore, egister the pulse

put, caused by single-different time scales.

ring signal.

VI. CONCLU

This work presented three facilitiIonization Dose and Single Evedevices: a 10-keV effective energyPelletron accelerator to produce lowan 8 MV Pelletron accelerator to pMOSFET transistors were exposed tX-ray radiation and an external 2.4 the irradiation procedure, characteriindicating that the transistor presenvoltage indicating that charge was trin the Si/SiO2 interface, dependingdose. To test the experimental setup ions, a pMOS transistor was irscattered 63Cu heavy ion beams. Aare ready for TID and SEE studies in

ACKNOWLEDGM

The authors would like to acknfrom the Brazilian Agencies CNPq,

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Nilberto H. Medina receivand Ph.D degrees in PhysicUniversity, São Paulo, B1988, and 1992, respectipostdoc position at the “IstiFisica Nucleare” (IFFN), It1995. He is Associate PPhysics Institute of thUniversity, Brazil. Head

Physics Open Laboratory of the Nuclear PhysHis research interest includes gamma–ranuclear structure, high spin states, nuclear rradioactivity, stopping power, radiation effedevices, and nuclear instrumentation.

Marcilei A. G. da SilvB.S., M.S. and Ph.D dfrom São Paulo UniveBrazil, in 1994, 19respectively. She is Asof Department of PhUniversitário da FEI, Campo, Brazil, since coordinated projects

Radiation Physics and develops research iPhysics, Solid State Physics, Applied NucMaterials Characterization.

Nemitala Added graduatedUniversity of São Paulo (1987) and Ph.D (1991) inUniversity of São Paulo Argonne National Laboratocurrently Assistant ProUniversity of São Pauloexperience in the area of working both in Basic Expe

Physics (angular correlation, fragmentatfusion, dissipative processes, sequential decayNuclear Physics (material analysis, archspectrometry, irradiation of biological sampldevices) as well as Nuclear Physics Instrumen

25100: Single event k, Netherlands. or the Measurement from Heavy Ion

or the Measurement of avy Ion Irradiation of ited States.

D.N., “Mapping ion MOSFET”, Nuclear

B 269, p. 2355-2359,

A., Vilches, M., A.M. low-cost commercial tuators A 125, p. 288-

F., and Grande, P.L., y ion-track evolution”,

lara: SILVACO, Sept.

ved the B.S., M.S. cs from São Paulo Brazil, in 1984, ively. He had a ituto Nazionale di taly, from 1993 to Professor in the he São Paulo of the Nuclear

sics Departament. ay spectroscopy, reactions, natural

ects on electronic

veira received the egrees in Physics

ersity, São Paulo, 999, and 2004, ssociate Professor hysics, at Centro São Bernardo do

2002. She has s related to in Basic Nuclear lear Physics and

d in Physics from (1981), Master

n Physics at the and post-doc at

ory (1992). He is ofessor at the o. Nemitala has

nuclear physics, erimental Nuclear tion, incomplete y) and in Applied haeometry, mass les and electronic ntation.

Vitor A. P. Aguin 1988. Chemiin Physics at SãoHas experience physical-chemicaand electronicradiation and nuworked as coInstitute of Sao

Institute for Tecnological Researchstudent at Sao Paulo University, hinuclear instrumentation and radiatdevices.

Fernando Rodthe B.S. in PhysSão Paulo, Brazpursuing the MUniversidade experience in nuclear instrum

Business Intelligence Analyst in Biginterests include nuclear instrumenton electronic devices.

Renato GiacomB.S. and M.Sengineering froPaulo, Brazil, received the Pengineering fromBrazil, in 1998engineer at Technologic Ins

1988 to 1997. He was the head of tNuclear Reactor Control Division atto 1998. In 2005 he joined the Institof FEI University as its general dibeen the head of the Electrical EnginUniversity. His research interest indesign of electronic devices, and thenvironments.

Eduardo L. A. São Paulo, BraziB.S., M.S. and from UniversidaPaulo, Brazil, inrespectively. HeFísica of Univer1991. His mai

detectors and instrumentation for physics.

6

uiar was born in Sao Paulo stry technician, graduated

o Paulo University in 2010. in materials analysis by

al tecniques and optical c microscopy, natural uclear instrumentation. Has nsultant at Geosciences Paulo University and at h in Sao Paulo. Graduate is mainly interests include tion effects on electronic

drigues Aguirre received sics from Universidade de zil, in 2012. He is currently

M.S. degree in Physics at de São Paulo. He has

ion bean analysis and mentation. Was worked as a

g Data analysis, his mainly tation and radiation effects

mini (M’10) received the S. degrees in electrical om Universidade de São in 1985 and 1992, and

PhD degree in computer m Escola Politécnica, USP, . He worked as a project

the Brazilian Navy stitute in Sao Paulo, from the hardware section of the t that institution from 1994 tute for Industrial Research irector. Since 2007 he has neering Department of FEI ncludes the modeling and

heir behavior in radioactive

Macchione was born in l, in 1962. He received his Ph.D. degrees in physics

ade de São Paulo, São n 1984, 1990, and 1998, e works at Instituto de sidade de São Paulo since in interests are particle nuclear and high energy



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Marco Antonio Assis de Melo was born in São Paulo, Brazil, in 1968. He received the B.S. degree in electrical engineering from Faculdade de Engenharia Industrial, FEI, Brazil, in 1991, and received M.S. and Ph.D degrees in electrical engineering from Escola Politecnica, USP, Brazil, in 2004 and 2009, respectively. Since 1999, he has been an Associate Professor with

Centro Universitário da FEI, São Bernardo do Campo, Brazil. He has experience in Electrical Engineering with emphasis on Electronic Systems, Signal Processing, Telecommunications, Control Systems, acting on the following topics: nonlinear filters, image processing, signal processing, processors for signal processing and image, hardware and software for space applications.

Juliano A. Oliveira was born in São Paulo, Brazil, in 1990. Received title electronics technician at SENAI Anchieta and currently is studying electrical engineering with telecommunications emphases at the University Center of FEI. In 2010 developed research work on maglev hybrid in 2011 began research in signal processing and radiation effects on

electronic devices. He is interested in collaborative robotics, signal processing, big data fusion, and electronic systems in general.

Roberto B. B. Santos (M’13) was born in Recife, Brazil, in 1972. He received his B.S., M.S. and Ph.D. degrees in physics from Universidade de São Paulo, São Paulo, Brazil, in 1994, 1998, and 2003, respectively. Since 2004, he has been an Associate Professor with Centro Universitário da FEI, São Bernardo do Campo, Brazil, conducting research in

electrodynamics, quantum theory, radiation effects on electronic devices and circuits, and dynamical systems. Since 2012, he has been the Head of the Physics Department at Centro Universitário da FEI.

Luis Eduardo Seixas Jr. was born in São Paulo, Brazil, in 1962. He received the B.S. degree in electrical enginnering from the São Paulo School Engineering (FESP), São Paulo, Brazil, in 1987, and the M.S. degree from State University of Campinas (UNICAMP), Campinas, Brazil, in 2003. Test Specialist Engineer

in industrial semiconductors and automotive areas, worked at the Itautec - Components S/A in São Paulo, and Magneti Marelli Power Train in Campinas, Brazil. He has skill in Automatic Test Equipaments. Since 1998, he has been working as an integrated circuits (IC) designer and IC electrical test developer, in Center for Information Technology Renato Archer (CTI), Campinas, Brazil.

Manfredo H. Tabacniks is a full professor of the Physics Institute of the University of São Paulo, USP. He received his Ph.D from USP in 1991. From 1994-96 he served as a post-doctoral researcher at the IBM Almaden Research Center, S. Jose, CA on the application of Ion Beam Methods (PIXE and RBS) on magnetic films. Since 1996

he is the head of the Ion Beam Analysis facility of the Institute of Physics at USP. His main research interests are developing on beam methods for advanced material analysis and modification of materials.


Brazilian facilities to study radiation effects in electronic devices

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