Radiation Design Criteria Handbook - CORE

NATIONAL A E R O N A U T I C S A N D SPACE A O M l N l S T R A T l O N

Technical Memorandum 33- 763

Radiation Design Criteria Handbook

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C A L I F O R N I A I N S T I T U T E O F T ECHNOLOGY

PASADENA, C A L I F O R N I A

August 1, 1976

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TECHNICAL REPORT STANDUD TITLE PAGE

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4. Title and Subtitle

RADIATION DESIGN CRITERIA HANDBOOK

7. Author(s) Alen G. Stanley, Keith E. h r t i n , Sandra Douglas

9. Parforming Organization Nane and Address

JET PROPULSION LABORATORY California I n s t i t u t e of Technology 4800 Oak Grove Drive Pasadena, California 91103

12. Sponsoring Agency Name and Address

NATIONAL AERONAUTICS AND SPACE ADMIMISTRATION Washin,ton, D.C. 20546

'* Oat. ~ u g u a t 1, 1976

6. Performing Organization Code

8. PerCwming Organization Report No.

10. Work Unit No.

11 . Contract or Grant No. NAS 7-100

13. Type of Report and Period Covered

Technical Memorandum

14. Sponsoring Agency Code

15. Supplementary Notes

16. Abstract

This handbook provides radiat ion design c r i t e r i a f o r electronic par ts applications i n space environments. The data was cornpiled from the ~ a r i n e r l ~ u ~ i t e r Saturn 1977 !!~JE@'~"T) electronic pa r t s radiat ion test program. I n t h i s program selected radiation-sensitive device types were exposed t o radiat ion environments compatible with the MJS'77 requiremects under stli table b ias conditions. A t o t a l of 189 integrated c i r c u i t s , t r ans i s to re , aad other semiconductor device types were t e s t ed up t o 1.5 x 105 r a d s ( ~ i ) generated from steady electron bean and ~ 0 6 0 sources.

17. Key Words (Selected by Author(s)) Electro,lics ~ n d Elec t r ica l

Eng: neer.il:? Qnality Ac:surance and Rel iabi l i ty Space 3 3 d i h t i ~ ~ l Mariner 7 ~ ~ ~ f t e r / s & t u r n 1977 Project

18. Distribution Statement

Unclassified -- Unlimited

22. Price 21. No. of Page

336

19. Security Classif. (of this report)

Unclassif ie '

20. Security Classif. (of this pap)

Unclassif led

N A T I O N A L A E R O N A l J I I C S A N D S P A C E A D M I N I S T R A T I O N

Technical Memorandum 33- 763

Radiation Design Criteria

Handbook

Alan G. Stanley

Keith E. Martin

Sandra Douglas

J E T P R O P U L S I O N L A B O R A T O R Y

C A L I F O R N I A I N S T I T U T E O F T E C H N O L O G Y

P A S A D E N A . C A L I F O R N I A

August 1, 1976

P R E F A C E

The work described in t h ~ s repor t was performed by the Astr lonics

Division of the Jet Propulsion Laboratory.

JPL Technical Memorandum 3 3 - 7 6 3 k

iii

ACKNOWLEDGMENT

Grateful acknowledgment i s made f o r the contribution t o this r epor t

by perscnnel f rom the Jet Propulsion Labora tory (notably Daniel Bergens,

Merr i l l Burnett, and Alan Yamakawa); The Boeing Co., Physica l Sciences

Section; General Elec t r ic Co., Space Systems Division, Sys tems Survivability

and Reliability Components; and Hughes Aircraf t , Radiation Effects Section.

JPL Technical M c lorandurn 33-763

CONTENTS

. . . . . . . . . . . . . . . . . . . . . Indexof T e s t D e v i c e Types

. . . . . . . . . . . . . . . . . . . . . . . . . . . . I Introduction

. . . . . . . . . I1 Use of the Radiation Handbook in Circui t Design

. . . . . . . . . . . . . . . . . . . . A Bipolar Trans i s to r s

. . . . . . . . . . . . . . . . . . . . . . . . . . b . J F E T 1 s

. . . . . . . . . . . C Diodes. Rectifiers. and Zener Diodes

. . . . . . . . . . . . . . . . . . . . . . . . . D . L i n e a r I C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . E CMOS

. . . . . . . . . . . . . . . . IU I r radia te- Anneal (IRAN) Screening

. . . . . . . . . . . . . . . . . . . . . . . . A Device Types

. . . . . . . . . . . . . . . . . . . . B P r o g r a m Constraints

. . . . . . . . . . . . . . . . . C Experimental Investigation

. . . . . . . . . . . . . . . . . . . . . D IRAN Test Devices

. . . . . . . . . . . . . . . . IV . T e s t Device Types Data Sheets

. . . . . . . . . . . . . . . . . . . . A Bipolar Trans i s to r s

. . . . . . . . . . . . . . . . . . . . . . . . . . B . J F E T 1 s

. . . . . . . . . . . . . . . . . . . . . C Integrated Circui ts

. . . . . . . . . . . . . . . . . . . . . . . . D Zener Diodes

. . . . . . . . . . . . . . . . . . E Constant Current Diodes

. . . . . . . . . . . . . . . . . . . F Diodes and Rect i f ie rs

. . . . . . . . . . . . . . . . . . . . . . . . . . G Capacitors

. . . . . . . . . . . . . . . . . . . . . . . . . . H Res i s to r s

. . . . . . . . . . . . . . . . . . . . . . . I Optical Devices

. . . . . . . . . 1 . Tests Using 0 32-cm (1 18-in ) Space

. . . . . . . . . . . 2 Tests Using 20-cm (d-in.) Space

. . . . . . . . . . . . . . . . . . . . . . 3 Conclusions

. . . . . . . . . . . . . . . . . . . 4 . Tc s t Conditions

J P L Technical Memorandum 33-763

. . . . . . . . . . . . . . . . . . . . . . . . . . . J . CMOS

. . . . . . . . . . . . . . . 1 . Gate Turn-On Voltage

. . . . . . . . . . . . . 3 Transmiss ion Gate Leakage

. . . . . . . . . . . . . . . . . . 5 Propagation Time

. . . . . . . . . . . 6 Dose Rate and Annealing Effects

. . . . . . . . . . . . . . . . . . . . . . 7 Conclusions

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . References

APPENDIXES

. . . . . . . . . . . . . . . . . A Vendor Identification Code

B . Recomnlended Worst- Case Electronic Device . . . . . . . . . . . . . . . . . . P a r a m e t e r Variations

C . P a r a m e t e r Values of IC Types Requiring Radiation . . . . . . . . . . . . . Acceptance P r i o r to Flight Use

TABLES

1 . Determination of final beta. given initial beta . . . . . . . . . . . . . . . . . . . . . and damage fac tor

. . . . . . . . . . . . . . . . 2 Device type subject to IRAN

. . . . . 3 Lh.1139 quad compara tor radiation tes t sut:lmary-

4 . Electron radiation effects in Zener and . . . . . . . . . . . . . . . . . . . . . r t f c r e n c e diodes

5 . Rejection c r i t e r i a for RCA CivIOS wafer . . . . . . . . . . . . . . . . . . . . radiation sc recning

. . . . . . . . . . . . . . . . . . . . . 6 Analysis of ISS data

. . . . . . . . . . . . . 7 . CMOS wafer screening summary

8 . CMOS radiation cha rac te rization data a t . . . . . . . . . . . . . . . . . . . . . . . . 150 krad(Si)

. . . . . . . . . . . . . . . . . . . . . 9 . Propagation t ime

JPL Technical Memoraadurn 3 3 - 7 6 3

. . . Worst -case p a r a m e t e r va r i a t i ons fo r t r a n s i s t o r s

Wors t -case p a r a m e t e r va r i a t i ons fo r r e s i s t o r s . . . . Worst -case p a r a m e t e r va r i a t i ons fo r fixed capac i to r s . . . . . . . . . . . . . . . . . . . . . . . . Worst -case p a r a m e t e r va r i a t i ons fo r diodes, Zene r d iodes . . . . . . . . . . . . . . . . . . . . . . . Worst -case p a r a m e t e r var ia t ions f o r in tegra ted . . . . . . . . . . . . . . . . . . . . . . . . . c i r c u i t s

it orst-case p a r a m e t e r va r i a t i ons f o r CMOS . . . . . . . . . . . . . . . . . . . integrated c i r c u i t s

. . . . . . . . . . . . . . . . Linear in tegra ted c i r c u i t s

FIGURES

. . . . . . . . . . . . . . . . . . . . . . . Sample shee t

. . . . . . . . . . . Zener voltage change with e n e r g y .

. . . . . . . . . . F l u s angle, e l ec t ron b e a m a t 60 deg

F l u s angle, e l ec t ron b e a m a t 45 deg . . . . . . . N- and P-channel ga tc d r ive t r a n s f e r

. . . . . . . . . . . . . . . . . . . . . c h a r a c t e r i s t i c s

Threshold voltage of N-channel t r a n s i s t o r on . . . . . . . . . . t e s ~ pat tern T.4 6372, preradidt lon

Threshold voltage of N-channel t r a n s i s t o r on . . . . . . . . . . t es t pa t te rn TA 6372, postradiat ion

Threshold voltage of P-channel t r a n s i s t o r on . . . . . . . . . . . t e s t pa t te rn TA 6372, prcrad ia t ion

Threshold voltage of P-channel t r a n s i s t o r on t e s t pat tern TA 6372, postradiat ion . . . . . . . . . . Distr ibut ion of AVGS at IDS a f t e r 1 .5 x 1015 rad(Si) . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . RCA CD4006, postratl iation, group 1

. . . . . . . . . . LZCA CD-4006, prcrad ia t ion , group 2

. . . . . . . . . . . . . . . . . . LICA CD4006, g roup 3

JPL Tcc!lnical h lemorandani 33-7C 3 vii

Bipolar

a S e e Appendix A f o r vendor ident i f icat ion code.

T r a n s i s t o r s

.J

-

Device Vendor P a g e

2N918 MOT 16

2N930 TIX 17

2N2060 TIX 18

2N2222 MOT 19

2N2222 TIX 2 2

2N2369 CTI 4 4

2N2369 MOT 46

2N2484 C T I 4 7

2N2484 TIX 49

2N2605 C T I 5 3

2N2605 TIX 54

2N2658 SOD 5 5

2hL2>7 MOT 58

2NZ880 SOD 5 9

2N290; MOT 6 2

2N2907 TIX 6 6

2N2920 TIX 6 3

2N2946 TIX 7 2

2N297 5 FAS 7 2

2N3057 RAY 7 4

2N3251 MOT 7 6

2N33 50 TIX 7 7

2N3440 R CA 7 8

2N3497 MOT 7 8

2N3499 MOT 7 9

2N3501 MOT 7 9

2N3637 MOT 80

2N3742 MOT 8 5

JPL Technical Memorandum 33-763 i x


2N3805 FAS 8 5

2N4044 C T I 8 6

2N5087 C T I 8 8

KD6001 KMC 88

MQ.2219 M O T 8 9

M U 9 0 5 M O T 93

MQ3467 M O T 98

MQ3725 MOT 102

PA7443 RAY 106

SA2267 RAY 111

14BB101 SOD 112

96SV131 SOD 114

3029-201 -1 RAY 115

3029-202-1 RAY 117

SDT3303 S O 3 118

SDT3304 SOD 120

SDT3323 SOD 122

SDT3403 SOD 125

SU I'4905 SOD 126

SDT5553 SOD 128

SDT5553 SOD 136 (IRAN )

SDT8805 SOD 139

SE7056 NSC 139

SQl079 MOT 140

SS3 137 MOT 14 1

JFE T' s


SIL

SIL

SIL

SOD

SLL

SIL

SIL

Device Vendvr Page

SIL

SIL,

SIL

TIX

TIX

SIL

SIL

MOT

SIL

SIL

Inte - rated Ci rcu i t s

A 51

PMI

SIL

SIL

SIL (LRAN ! SIL

SIL (IRAN)

SIL

SIL (IRAN)

IN L

SIL

SIL

HAH

HA& (TO-99)

INL

INL

IPJL

I'? s G

NSC (LRAN .

NSC (unhardened )

NSC (hardened)

NSC

NSC (unlla rdened)

NSC (hardened)

tlA2600 HAR 172 I LM106 NSC 189

lIA262O EIAK LM108 NSZ 190

HA2700 1 IAR (unhardened)

(fla tpack) Lh1108 NSC 191 (ha rdenec!)

x JPL Technical Memorandum 33-763

I n t e g r a t e d C i r c u i t s ( c o n t d )

L M l 1 1 IJSC ( u n h a r d e n e d )

-- - -

Lb1111 NSC W A N )

Device V e n d o r P a g e

LM124 NSC (uni ,ardened)

D e v i c e V e n d o r P a g e

LM124 AS C ( h a r d e n e d )

LM139

LM139 NSC ( u n h a r d e n e d )

NSC 2.06 ( h a r d e n e d )

SGN 208

T IX 2 09

NSC 21 1

NSC 212

M O T 213

M O T 21 3

-- -

Z e n e r D i o d e s

MOT

b4OT

MOT

MOT

M O T

DIK

DIK

MOT

DIK

DIK

DIK

MOT

FAS

TRW

MOT

U I'R

U I'R

C o n s t a n t C u r r e n t Diodes

IN5288 MOT 227

1N5290 M O ' r 227

lN5297 MO'I' 228

lN5300 MOT 228

Diodes and R e c t i f i e r s

I

E'J1'1100 FAS 230 1 . *

I J P L rec l in ica l h lemorancium 33-763 d i r

R e s i s t o r s

Capac i to r s

CDP16-01-103G DAL 234 1 LDP16-01-153G DAL 237


B l l B CRC 233

CDP16-01-104G DAL 234 1 S! 316-02-473J DAL 237

Device V endo r P a g e

CDP16-01-223J DAL 235 1 MG720 CAD 2 38

CDP16-01-563J DAL 2 3 5

CDP16-01-683J DAL 2 36

CDP18-02-393K DAL 236

MG750 CAD 238

MM125 CAD 239

MS176 CAD 239

Optical Devices

TIL23 TIX

TLL 2 4 r ~ x 240 L S ~ O O T IX 240

CMOS

R CA

R CA

R CA

R CA

RCA

RCA

R CA

RCA

RCA

KCA

R CA

R CA

R CA

R CA

RCA

R CA

R CA

R CA

R CA

R CA

RCA

R CA

RCA

RCA

RCA

K CA

R CA

K CA

K C 4

xii J P L Technical Memorandum 3 3 -763

ABSTRACT

This handbook provides radiation design c r i t ~ r i a for e lec t ronic p a r t s

applications in space environments. The datz was compiled f rom the

hiariner / Jupi ter Saturn 1977 (hlJS177) electronic p a r t s radiatiov t e s t program.

In this p rogram selected radiation-sensitive device types were exposed to

radiat i jn environments compatible with the MJS177 requirements under suit-

able bias conditions. A total of 189 integrated c i rcui t s , t r ans i s to r s , and

other sen,iconductor device types were tested up to 1. 5 x l o 5 rads(Si) 6 0

generatcd f rom steady e lec t ron beam and Co sources .

JPL Technical hiemorandum 3 3 - 7 6 3 xiii

I. INTRODUCTION

In si tu measurements of the Jovian trapped radiation were made by

Pioneer 10 in December 1973 and by Pioneer 11 in December 1974. These

measurements revealed a potentially hazardous environment for M JS'77

spacecraf t e lec t ronics . During 1974 the MJS'77 project c a r r i e d out an

intensive study of the charged par t ic les environment derived f r o m those

measurements and the effects of this environment on both spacecraf t equip-

ment and the Jupi ter encounter a spec t s o: the M JS miss ion. F r o m this

study the ~ a r i n e r , / ~ u ~ i t e r Saturn 1977 Radiat1c.n Control Requirements

Document ( P D 618-229 , dated July 14, 1975) was developed. One of the

requi rements s e t forth i s that the electronic piec? p a r t s used in the space-

craf t pe r fo rm within acceptable l imi ts during and a f t e r Jupi ter encounter

and a t Saturn . Because of r e source limitations, the investigations were

conducted with maximum u s e of existing l i te ra ture and t e s t r e su l t s , limiting

the J P L radiation tes t effort to known o r suspected problem devices where

adequate tes t data \bras not avai lable.

This handbook i s a s u m m a r y of applicable data lesul t ing f r c m the

MJS'77 radiation t e s t effort . The information, presented according to device

type ( s e e Index, page ), i s intended to be useful t o the engineer fo r c i rcui t

design. A complete detailed history file of the tes t resul t s h a s been main-

tained and i s avai lable (contact: A. Stanley in the P a r t s Radiation Group of

J P L Section 36 5) .

In applying the data contained in the handbook, the u s e r should be

aware of inherent l imitat ions; i . e . , the data is intended a s a guide and i s

valid only for the specific manufac tu re r ' s device a t the stated conditions.

lVhen applying the data to c i rcui t designs. the u s e r i s cautioned regarding

extrapolation to lower :luences, different energies and different bias con-

ditions. Device degradation i s sensi t ive to measurement and bias conditions

during i r radia t ion . Also. d i f ferent date codes may reflect p rocess changes

which could change the device sensi t ivi ty to radiation damage.

JPL Technical Memorandum 33-763

Tt.2 radiation environments were in accordance with PD 618-229,

using e lec t rons f rom a Dynamitron a t energies f rom 2 to 2 . 5 MeV, e lec t rons

f rom a \'an de Craff genera tor a t 3 and 5. 5 Me\'. and a cobalt 60 gamma

source . The Dvnamitron was used in those t e s t s wherein the radiation

source i s not identified.

The majo r device t y ~ e s and fea tures of the method used ir! presenting

t e s t resul t s a r e given here in . \Vhenever deviations f rom this fo rm occur

because of the na ture of the data o r resul t s obtained, they a r e fu r the r

described for the specific device o r p a r a m e t e r s involved.

Data f rom different t e s t runs of a given device p a r a m e t e r was com-

bined ~ v h e r e the t e s t s and measurements lvere c a r r i e d out under s i m i l a r

conditions. The data for the follo\ving tes t runs was combined fo r a given

device type:

t 1) Same bias conditions during i r radia t ion .

( 2 ) Same bias conditions during measurzment of p a r a m e t e r s .

( 3 ) Same fluence.

4 Characterizat ion, non-lot sc reen and lot s c r e e n runs.

( 5 ) 2 to 2 . 5 Ate\- electron energy data ( i f o ther energies were used

i t wili be so s ta ted) .

(61 \'CE ( s a t u r ~ l t e d ) for t r a n s i s t o r s .

( 7 \ -CE (not sa tura ted) for t r ans i s to r s .

(8 ) Same manufacturer .

(9 ) Mardened devices.

( 10) Unhardened devices

A sample sheet i s given in F ig . 1, \vith the mhjor fea tures indicated.

.An explanation of those fea tures i s given below.

1 An outl ier i s h e r e defined a s a data point which does not fall

kvithin 3 u of the mean value of that p a r a m e t e r a t the lowest

value of the independent variable ( i . e . , lowest value of the

collector cu r ren t IC o r fluence, where the p a r a m e t e r i s

measured a s a function of I o r fluence, respectively) . C


Once established a s an out l ie r in this way, it i s considered a n

outl ier fo r a l l o ther values of the independent var iable .

(21 The data i s calculated both with and without out l ie rs whenever

they exist .

( 3 ) The s tandard deviation cr i s approximated by the following

expression:

where n i s the number of data points, 5 i s the mean value of the

s e t of data points, and x. i s a measured value of the p a r a m e t e r . 1

This gives an unbiased approximaticn of u, including c a s e s where

the sample s i ze ( n ) i s smal l . 1

(4) The p a r t s radiation charac ter iza t ion number evaluates the p a r t s

in accordance with c r i t e r i a f r o m Section VIII of P D 618-229.

These c r i t e r i a a r e repeated h e r e .

Insensitive to radiation; no specia l attention requi red .

Insensitive to radiation except for high-precision

applications. The application and degree of sensitivity

a r e specified.

Sensitive to radiation, resulting in significant degradation

of device p a r a m e t e r s . A radiation screening o r shielding

p rogram i s required if a reasonable design safety marg in

i s lacking.

The device undergoes catastrophic change and i s no longer

functional.

1 See R e f . 1.

JPL Technical Memorandam 3 3 - 7 6 3

F o r t r ans i s to r s , in addition to the tabulated information, graphs a r e

included giving ~ ( l / h ) a s a function of col lector cu r ren t . In these graphs , F E

only those calculated excluding the out l ie rs a r e plotted. The out l ie rs a r e

indicated on the graphs (wherever dual populations occur , both a r e plotted).

11. USE O F THE RADIATION HANDBOOK IN CIRCUIT DESIGN

The data contained in the Radiation Handbook should be used when

performing wors t c a s e analysis of electronic c i rcui t ry . If p a r t s data does

not appear in this handbook, then es t ima tes must be made by Section 365.

The data shows permanent damage to semiconductors in a radiation environ-

ment. The ra t e of impinging radiation o r radiation flux should a l s o be

considered a s this can .:ause a noise effect produced by the impinging

par t ic les on semiconductor devices. In addition, it should a l s o be pointed

out that lclw-energy e lec t rons m a y be deposited and collected by electronic

c i r cu i t ry which can cause a buildup of voltages a c r o s s high res is tance c i rcui t s .

The wors t case analysis i s perfornied by degrading f i r s t fo r t emper -

a t u r e and life (aging) and then fo r radiation to obtain the final degraded

value. The following sections desc r ibe the method of calculating

degradation.

A . BIPOLAR TRANSIS TORS

The cur ren t gain of a t r ans i s to r i s de termined a s descr ibed in the

follo~ving d iagram:

J P L Technical Memoralldum 33-76?

1

Subsys tem Minimum gain r equ i r emen t a t 25 "C, a t IC

Circu i t r equ i r emen t Dera t e f o r t e m p e r a t u r e

I 3 8

h~~~ IC 0.9% p e r "C

f Life dera t ing 25% 28. 5

Minimum t

Radiation dera t ing t

1 /hgE=O. 03 hFE requ i r emen t

I P r e d i c t e d gain 1 5

i Compare r equ i r emen t s with predic t ions and if t h e r e a r e p rob lems , identify

and s tudy solutions.

The radiat ion dera t ing i s de t e rmined by the radiat ion damage

coefficient a ( l / h F E ) , which i s a r e su l t of p a r t s tes t ing . The equation f o r

hFE degrada t ion i s

where

( I ) h ~ ~ ( f i n a l ) i s the predic ted gain t o be applied to the c i r cu i t .

1 2 ) h ~ ~ ( i n i t i a l ) i s the gain a f t e r degrading f o r t e m p e r a t u r e and

life a s p e r the M J S ' 77 Radiation Cont ro ls Requ i r emen t s .

Document 61 8-229, Appendix D ( s e t for th h e r e i n a s Appendix B) .

( 3 ) A ( l / h F E ) i s the radiat ion degrada t ion constant which i s found in

the handbook fo r each p a r t and i s a function of co l l ec to r c u r r e n t

Ic' radiat ion f luence, and b ias conditions during i r r ad i a t ion .

F o r ins tance , a 2N2222A device m a y have the following con-

di t ions f o r which the hFE(final) m u s t be calculated a t

IC = 60 p a (I' C E = 8 1'):

JPL Technical Memorandum 33- 763

--- -.

h ~ ~ ( i n i t i a l ) = 100 a f t e r degrading f o r t e m p e r a t u r e

and life

1 A- = 0.425; m e a n plus 3u at rad ia t ion e l ec t ron h~~ f luence of 5 x 1012 e l c m 2

1 1 = n- t 1

h ~ ~ ( f inal) h~~ h ~ ~ ( i n i t i a l )

- - 1 h~ ~ ( f inal) + A-

1

h~~ h ~ ~ ( i n i t i a l )

- - h~ ~ ( f inal) 1 0.425 t 100

1 - - h~ ~ ( f inal) - 0.435

= 2.3 which i s s e v c r c clc.,cradatiun in t h c

~ v u r s t c a s e

.JPL Technical Memorandun1 33-763

Under the conditions of I - 20 mA, V C - = 20 v ,

h ~ ~ ( i n i t i a l ) = 100 and a t a fluence of 5 X 1O1':/cm2

using the mean t 3 u value, then h f ~ ( f i n a l ) will be

This demonst ra tes that radiation h a s a much g r e a t e r influence on

t r ans i s to r performance a t ve ry low I therefore , low 1 applications c ; C should be avoided in radiation environments. In power devices th is might be

interpreted to mean that no problems exist , but it i s real ly the e m i t t e r

cu r ren t density that de te rmines the radiation damage. Therefore , power

devices will a l s o degrade severe ly if the emi t t e r cu r ren t density i s low.

The above calculation can be made using Table 1 by going to

a ( l / h F E ) = 0.00441 and hFE = LOO and interpolating to find - -

h ~ ~ ( f i n a l ) = 6 9 . In a l l c a s e s , the hFE of out l ie rs o r maver icks mus t

e i ther be considered o r screened out of lots to be used in ha rdware

expected to encounter radiation environment.

JPL Technical Memorandum 3 3 - 7 6 3

m n ? v . y q m w w o u , O n w O N N W n m - N I ~ ~ ? F E X ' ? ~ % . . - - - 1 - - - - / - - m w ! ~ L : 3 ( o o o m on i ; i d l u i i * i - r ^ N I N N & d = i l d 2 d * l 4 " - r n -- -- - s,.rq; ~ ~ ~ ~ / ~ : a f ; r : r t l ~ ~ ~ ~ ] z r x q 5 1 - - - - D P Z Z J S P C I - - - -

r r c - o o o o o - ~ ~ N I N N - - - - r e

N ~ W W 9 ' - ? 1 m N.':?". r . ? r r ! j L ? $ r z m ~ ( q m 0 - n ~ - ' z 2 z = 1 ~ ~ g X l d s o o m w r r - w r m m U ) - V ) L ? N m r m ' - o o o o - - O N n - r - w N N - - d G d . - c - 0

N m o o . ? r o o " O L ? ? ( 9 q y y " y y q y q q ' 9 9 . ~ " . % 5 , z z = ( s i * d ! & i G d m c r m l m r r - w n o u m m e * m o w a r m o w - o e o r o n n ~ n - r r N N - - N - 0 - - r m

0, W - r - ' O N " - q ? h ! N C : V ! N D f ' ? ? ' ? ' ? l o ? '??N'? ?'-3'!? - Z = r ! ~ ! ~ d $ i / i E O t ~ ~ ~ X Z I P ~ : ~ ! E ~ I : % 0 0 , E Z 2 1 z m

2 y,!qy ' m y ? y q y y y n . ' q ) * . y q q y r . ? ? O N - t - - ~ = g x l - n g g / ~ g g ~ j ~ ~ E : z I ~ : g : : g : : : . g g z z

- - r q y c ? ? n o r*r:c! * T O * r ? o ! * ~ ~ e ~ - r ~ 1 ~ ! ? ? g q q = o o w r n n n n N N - - 0 0 0 0 m m m = i ~ w o r n ~ r o N N N N N N N N N N N N N N N r r . 4 - - - - - - - - & Q + F

m r q r ~ ~ o q r - g =.k2k,5&w

~ 0 ! 9 ~ ! =?=!rq - : * q q i o r ! o * 2 1 9 4 1 - - - I.?!,::: r z z z srrs,zz.I:r , z = , 3 2 2 2

U!rn.Fr. w o n - - q ? w . w , q ? q r . . n y N . 1 o . o e m . n . n m r e . q ~ m 2 z z z z i i i i j i n o n n n n ~ N N ~ N - - - - - - c - - c - - c - c - , 1 1 9 ' 3 C ! S 1 8 z = O z m m m r - r e * &

I I I 8 % o " " I no o i a r w o o - ~ m ~ a / r o o o o o o o o 8 ~ s ~ ~ / ~ ~ s ~ ~ ~ s ~ s ~ s ~ ; . ~ ~ ~ ~ ~ ~ l ~ ~ ~ s ~ ~ s ~ ~ ~ ~ f ~ ,

y y m r Z O Z ) o o w r : = 2 z

' - 1 q y q q l y q y q (O 1 N r - J ) %

g o ! ? ?


q o y q ~ : ~ q q l y q q q : s . ? ' : q ' q o ? o . $ 1 2 2 2 2 yn(- .q y q q - m r q w 4 r : q o . y ) r ~ ~ ~ ~ l ~ ~ ~ z , s ~ z ~ ~ ~ ~ E z ~ z ~ ~ ~ ~ ~ L z z

n . r q 0 . 0 P z 2 =

The above discussion applies to t ransis tor h when the t ransis tor F E i s not saturated and when i t i s saturated. The saturated hFE, however,

will be much lower because the IB must be greater to lower the

saturation V CE. If, in switching applications, the VCE(sat) must be very

small, then the designer must expect very low resultant h due to low F E initial h and allowances for mavericks. With regard to FE

ICBO' 'BE' and sat)' degrade for temperature and life and then add

additional degradation due to radiation in accordance with this handbook for

the part in question, b e i q careful to select the appropriate bias conditions,

measurement conditions and radiation fluence. In all cases, the t ~ I J

values should be used in the addition. Designers should allow for I CBO as high a s 100 pa, AV a s high i ~ s 0.2 V and AV BE CE(sat) a s high a s 0 .2 V .

B. JFET ' s

The radiation-sensitive parameters of JFET devices a r e the leakage

current I GSS and noise characterist ics. In applying this handbook, the

radiation degradation in I should be added to the efiects of temperature. GSS The noise in the device increases considerably while it i s irradiated but

will probably return to close to original noise characterist ic when radiation

ceases ( i . e . , radiation flux effect). If temperature-degraded I was GSS

calculated to be 0. 5 nA a t VGS = 4 V, VDS = OV, radiation fluence

= 5 X 1 012 e/crn2, and a handbook value of 0 .1 nA, then the total would

be 0 .6 nA.

In N-channel JFET ' s there i s a channeling effect which can cause very

large leakage currents. With no radiation screening controls, this

current ( I ) could be a s high a s 100 nA. GSS

C. DIODES, RECTIFIERS, AND ZENER DIODES

In most applications, diodes and rectif iers do not degrade sufficiently

to provide much concern. However, in applications where the circuit i s

particularly sensitive to forward or reverse characterist ics due to circuit

efficiency, extra care must be taken in the selection of devices with

L Devices that a r e significantly more sensitive to radiation than the others.


minimum degradation. In these sensitive cases , the degradation i s added

to the parameter degradation with temperature. The parameters in question

a r e V and IR. A V usually changes bv !*a. chan 50 m V in the MJS Jupiter F F environment. I changes by less than 10 FA. 111 the case of sensitive o r

R precision applications of Zener diodes, VZ dope vary with radiation and must

be a c c o u n f ~ d for by adding AllZ due to radiation. AVZ i e l ess than 5 m V in

Zeners less thar, 15 volts; i t i s l ess than 20 rnV in Zeners less than 30 volts.

D. LINEAR IC

The primary parameters of interest a r e VOS, IOS, IBIAS, VOL, and

these a r e highly influenced by a radiation environment. The degradation

values listed in this handbook a r e changes o r delta values due to radiation

effects. These changes should be added to thc othe: changes due to

temperature effects. As a summary of these degradations, refer to

Appendix C.

E. CMOS

The predominant parameters of interest in radiation are:

( 1 ) Propagation delay, which increases with radiation.

( 2 ) Device power consumption, which increases with radiation.

( 3 ) OFF leakages in multiplexers, which increase with radiation.

(4) r ON resistance, which increases with radiation. ds

(5) Noise margin, which increases with radiation.

The effects of radiation a r e added after the effects of temperature and life

a r e determined.

1'0 improve the response of CMOS to radiation, better process

controls must be instituted unless the degradation can be tolerated in the

design. Radiation data should be taken on samples of al l wafers of par ts

to be used in radiation environment. Refer to the data in this handbook on

parts that have been tested.

I \ . *I


I

I IRRADIATE -ANNEAL (IRAN) SCREENING

An extensive investigation of i rradiat ion-anneal ( IRAN) screening

against total dose radiation effects was c a r r i e d out a s pa r t of a p rogram to

harden the Mar ine r ~ u p i t e r / ~ a t u r n spacecraf t against the Jupi tar radiation

belts. The rret:~od consis ts of i r radia t ing semiconductor devices with

cobalt-60 to a suitable total dose under representat ive bi.as conditions and

separat ing the undesired tail of the d is t r ibut io i~ f r o m the bulk of the pa r t s by

means of a predetermined acceptance l imit . The acceptable deGi?es a r e then

res to red to the i r pi-eirradiation condition by annealing theill at an e:zvated

tempera ture .

Irradiate-anneal i s the only kilown 100% radiation s c r e e n I c : t

maver icks . In general , this should be supplemented by a qualification t e s t

based on a diffusion-metallization lo:, in which a few samples a r e i r r ad ia ted

t o a total dose in excess of the projec t requi rements . Fa i lu re to pass this

tes t implies lot jeopardy and an cxtension of the delivery period by many

months .

Since the lot screening method imposed intolerable t ime const ra in ts ,

i t was hoped that the i r radia te-anneal technique might be employed to

predict the radiation behavior of each device in a quantitative manner s o

that even lots of marginal radiaticn quality might be utilized a t a somewhat

lower yield. This requirement imposes f a r m o r e s e v e r e cons t ra in ts on the

retracking of e lec t r ica l p a r a m e t e r s a f t e r the f i r s t and second i r radia t ion

th tn the elimination of maver icks .

A . DEVICE TYPES

IRAN was considered fo r device types that were determined to be m o r e

radiation-sensitive than allowable by the c i rcui t and shielding analyses .

However, such screening methods work only when the devices show a

significantly varied response to a radiation exposure . The devices consist

of l inear bipolar devices, analog switches, n-channel J F E T s , and bipolar

t r a n s i s t o r s . The p r imary cause of radiation damage induced in these

devices by ionizing radiation i s the formation of inversion l aye r s due to the


accumulbtion of positive charges in the silicon oxide insulator near the

silicon-silicon oxide interface. This depends on the quality of the oxide,

which i s to a large extent an uncontrolled process variable.

Devices that a r e generically extremely sensitive to ionizing radiatian

( e . g . , MOS devices) a r e poor candidates for the IRAN technique and l lust

be shielded. An additional reason for excluding :dOS devices i s the d i i f i cu l !~

of annealing out the radiation-induced interface states except a t much higher

temperatures. The important LM108 operational amplifier was excluded,

because it had been possible to harden this device against ionizing radiaticn.

All n-channel JFETs with a l ightk doped base region a r e likely to

develop sizab:.. gate leakage currents and were therefore considered to be

candida: s for IR14N. It was considered p r e f e ~ a b l e to redesign circuits , so

that bipolar transistors could operate with minlmum dc current gain rather

than resort to IRAN.

ti. PROGRAM CONSTRAINTS

The original requirement imposed on the devices was to survive a

total dose of 125 krad (Si). This was later decreased to 60 krad (Si) a s the

result of a more precise definition of the Jovian radiation belt. Fo r

reliability reasons. a ceiling of 150°C was imposed on the annealing tem-

perature of the devices. It was la ter discovered that thls temperature i s

inadequate for complete annealing of all surface effects. Burn-in tem-

peratures up to 300°C have been successfully employed in many high

reliability programs, but this requires device construction analysis and

thermal s t r e s s analycis for each device type before procurement. Slich an

irlvestigation was ruled out because of timing constraints. The devices a r e

annealed in an inert atmosphere for 96 hours. Experiments showed that

longer annealing times did not cause any additional annealing.

Yigh-temperature annealing was considered to he unnecessary for

the JFETs . In these devices only the leakage currents a r e affected by the

ionizing radiation. These a r e :asily controlled and not s~gnificant in those

devices that pass the IRAN acceptance cr i ter ia .

JPL Technical Memorandum 33-763 13

' - w - u c . . . a * .J

C. EXPERIMENTAL INVESTIGATION

A ser ies of investigations was carr ied out in order to obtain the

following inf~rmation:

(1) What i s the optimum dose for screening? Too low a dose may

not reproduce the surface effects that cause degradation a t

higher doses; whereas too high a dose degrades the devices

unnecessarily. The onset of surface effects caused by inversion

layers depends on the impurity ccncentration in thc si!icon a s

well a s the composition of the oxide a t the silicon interface

and can therefore not be uniquely determined.

(2) What acceptancl: cr i ter ia can be applied? Unless there i s com-

plete retracking of a l l devices on reirradiation, the acceptance

cri teria musi: be considerably more tightly specified than the

worst case conditions required by the application. On the ot!~er

hand, tight specifications may cause s ~ v e r e yield penalties.

( 3 ) What i s the annealing behavior? Do al l the parameters anneal

completely o r i s there some residual radiation damage? Are

there i .dications of anomalous annealing?

(4) Do the parameters re t ract on reirradiation o r do they exhibit

memory effects? Do any of the devices show anomalous

properties that could not have been predicted from the results

of the f i rs t irradiation?

A ser ies of experiments was conducted on each device type under

consideration for IRAN. Non-flight par ts had previously been exposed to

2 . 5 MeV electrons up to 1013 e / sm2. These devices were annealed for

96 hours at 150°C approximat.!ly two to three months a f te r the initial

exposures. Most parameters ai~nealed back to acceptable specification

levels, but others did not return to their preirradiation values. Since high-

energy electrons can induce a significant amount of displacement damage,

i t was decided to car ry out additional experiments using a cobalt-60 source.

The devices were irradiated to a total dose of either 50 o r 125 krad(Si),

annealed at 150'C for 96 hours a- subsequently reirradiated -with 2 . 5-MeV

electrons, making measurement.; at four radiation levels from 5 X lo1 to

5 x e/cm2.


D. IRAN TEST DEVICES

Only the flight device types listed in Table 2 were subjected to IRAN;

the other device types tested were unsuitable for IRAN. The degradation that

these devices will experience on reirradiation in the Jupiter environment is

indicated a s a function of f luei~ce in separate tables followicg the normal

radiation properties. After annealing, the dc parameters of a l l devices were

remezsured to the original s~ec i f ica t ion l imits with the following exceptions:

NSC LM101. IB increased from 75 to 100 nA

NSC LM 1 1 1. IB increased from 100 to 400 nA

Ia5 increased from 10 to 2 5 nA

Table 2 . Device type subject to IRAN

IRAN total dose,

Device krad t~ Pe (Si) Acceptance cr i ter ia Annealing

2N4856 60 IGSSatVGS= -20V < 500pA Ncne

2N5196 60 IGSSatVGS=- lOV<100pA None

2N5520 60 IGSS a t VGS = -10V < 100pA None

2N5556 60 IGSS a t VGS = - 15V < 2 50pA None

DG129 50 IS (off) < 3nA 96 h r at 150°C

DG133 50 IS (off) < 3nA 96 h r a t 150°C

DG141 5 G IS (off) < 5nA 96 h r a+ 150°C

LMlOl 125 AVOS<0.7mV, A1 <2.5nA, 0s 96 h r at 150°C

\

i 8 JPL Technical Memorandum 33-763

IV. TEST DEVICE TYPES DATA SHEETS

A . BIPOLAR TRANSISTORS

2N918, Motorola

2N918 MOTOROLA 1 5 . c n PAGE 2 OF 3 I i

Y1 k L

i - G

13) MEAN . 3 0


2N930. Texas Instruments

2N930 TEXAS INSTRUMENTS

I 1013 e,,cm2 PAGE 3 OF 3

JPL Technical Memorandum 33 - 76 3 17


PAGE 3 OF 3

- -

-

-

- - - -

-

-

JPL Technical Memorandum 3 3 -76 3

2N2222, Motorola

k a s t i r ~ mint

I I B ~ M : I&. L Blm: %6s. -. : - - -! __.,--i !-- - . - .I ! .m : .;16Y7 ,016

I s. rota ! vc . rov I VCL - 0 . 1 ~ : II I

--

la I / .37*8 .d>q I

I I I I --,. 1 .lo1a 1 Vcr =Q.IAV ' 12 f .o le7

b JPL Technical Memorandum 33-763

i * 8b

2 N 2 2 2 2 A h4OTOHOLu

5 . 1012 e cm2 SATUhATLD PAGE 3 OF 6

2N2222A M O T O R O L A

I 1 0 I 3 e c n 2 SATUFATED PAGE 4 O F 5


10-31 I I I l l I I I l l I I I l l I 0.01 0.1 1 10 100

I c e mA

1

\ JPL Technical Memorandum 33-763

2N2222. Texas lnstrumente

Texas Instruments initiated a process change in 1972 affecting the

oxide passivation layer. A s a result, the data for both the tables and graphs

will be grouped a s follows:

Parameter Group Date code range

a(l/hFE) 1 1971 - 1972

> The performance of this type of device at a V - 0. 12 volts is CE -

very unpredictable. The test results a r e questionable because the test

instrumentation did not use separate voltage and current probes. Any small

change in V will cause a very large change in the gain at this operating CE point. Consequently, separate graphs were used for V - 0.1 and 0.12 V

CE - if there was more than one value of V a t a given current level in order CE to prevent overlap of the data due to large e r r o r bars .

2 2 JPL Technical Memorandum 33-763

26 R ~ R o D G C I B I L ~ ? I OF THB PACE I6 P m JPL Technical Memorandum 33- 763

I

1.25 . la '?. ,rn2 SATURATLD PAGE In OF 3 7



. . . - , - . - - .- .- -. ..~ . a--- -

1971-1972 2N2222 TEXAS INSTRIMNTS 5 . l0I2 e , h 2 SATUIIATED PAGE I2 OF 37

a M A N + & 1

JPL Technical Memorandum 33-763 y.

JPL Technical Memorandum 33-763 3 1


- . . , , \-. '

iNfizz TEXAS lNSTRUhlYNTS

5 x 10" .b2 UNSATURATED PAGE 21 OF 37

*= OUTLIER I

, MEAN 317

\

T\ MEAN + 3 0

10-I - , ' 1 I 1 I 8 8 1 I .

1973 2N2222 TEXAS INSTRUMNTS -


- Y ". L - - a

1.25 . l o t2 a/cm2 UNSATURATED PAGE 22 OF 37

*- OUTLIER

- -

-

I -

I o - ~ I I 1 1 1 1 s * - 0.01 0. I I 10 100

1973

* 2N2222 TEXAS INSTRUMENTS

5 x lot2 e/cw2 UNSATURATED PAGE 24 OF 37

\ dC = OUTLIER

JPL Technical Memorandum 33 - 763

2N2222 TEXAS INSTaUMENTS

5 x 1 o1 ./cm2 SATURATED PAGE 26 OF 37

MEAN + 30

1974-1975 - 2N2222 TEXAS INSTRUMENTS -


1-1 - . .

10"

5 - I I e/cm2 SATURATED PAGE 25 OF 37

1 \ ... - \

\ MEAN 4 3u -

\ MEAN + 3a -

"4

f ()

a

lo4 -

- VCE 0.26V

-

-

10-S I a I I t I I i l l I I I l l I I I I .

0.01 0. I I 10 100

1974-1975

TEXAS INSTRUMNTS

SATURATED PAGE 27 OF 37

1974- 1975 2N2222 TEXAS INSTRUMENTS 1.25 x 10' e/cm2 SC TURATED PAGE 28 OF 37

MEAN 4 3 u

JPL Technical Mcmorandurn 33-763

loo - I I 1 1 1 I I I 1

1974- 1975 -

- 2N2222 - TEXAS INSTRUMENTS - 1.25 x 1012 d c m 2 SATURATED PAGE 29 0; 37

- MEAN + 317

10-I - 1 I 1 ' 1 I I I l l I 1---

1976 1975 2N2222 TEXAS INSTRUMENTS

2.5 * l 0 I 2 dcm2 SATURATED PAGE 30 OF 37

• M E A N 4 3 0

i v,, 0.2v lo-= - -

0 - - - P VCE 0.2v

Y r V,, 0.34V - - a \. M E ~ N t 3a ;i [ i V,, 0.26V

I O - ~

I ~-1 1 I 1 1 1 1 1 I 1 1 1 -

0.01 0. I I 10 100 IC . mA

JPL Technical Memorandum 33- 76 3

I I I 1 1 I I I 1 - 1974-1 975 2N2222 - TEXAS INSTRUMENTS 2.5 x 10'~o/crn~ SATURATED PAGE 31 OF 37 1

1974-1975 2N2222 TEXAS INSTRUMNTS

1 5 ,. lob2 e/cm2 SATURATL D PAGE 32 OF 37

1

JPL Technical Memorandum 33- 76 3 4 1

-- ----- -T-

lo0 , I I 1 1 1 1 l l l

1974-1915 -

- 2N5222 - TEXAS I WTRUMENTS - 5 * 1012 doZ - SATURATED PAGE 53 OF 37 - WAN 3v -

I r 1 r 1 I I I 1 1 I I 1 1 1 I I 1 1

1974-1975 2N2222 TEXAS INSTRUMENTS

5 u lo1' 4 c m 2 UNSATURATED PAGE 34 OF 37

JPL Technical Memorandum 33-763 .i

JPL Technical Memorandum 33 -763

1974-1975 -\ \

2N22iZ

\ TEXAS INSRUMMS 5 u 1012 ./cm2 UNSANRATED PAGE 31 OF 37


v

.- - .-. . --.--- .. . -. .. ---+--a- I.. I

2N2369, Motorola

2N2369 MOTOA'

\ MEAN * 3 0 5 x lo1' CAT1 IDA' --..--- PAGE 2 OF 5

JPL Technical Memorandum 33-763 :

-- -- - -.--.

10-I

- W r 10-2

- I I I l l I I l I f

2N2369 - hn0TrnOCA 1.25x10~~./,,2 - - SATURATED PAGE 3 OF 5

-

- -\ - \ MEAN + 3a

- 4 \

- 10-3 _ I , , I a , 1

A.

I 10 100

10-I - 1 I 1 1 1 I I I I d - 10-I: I I I l l I 1 1 I ' -

2N2369 2N2369 MOTOROLA - - MOTOROLA - 2.5 Y l0I2 e/cm2 - 5 x 1012 e/m2 - SATURATED

- SAlUUAtED

PAGE 4 OF 5 \ PAGE 5 OF 5 - \ \MEAN 3u

' \ M A N + 3~ U1

f 10-2 z --

lo4 100 I 10 I 10 100

IC, mA lc,

2N2484. Circuit Technoloev

I I JPL Technical Memorandum 33-763

t ' . C

CIRCUIT TECHNOLOGY

5 x e/cm2 PAGE 4 OF 5

Y \ f \

a \ MEAN + 3 0

CIRCUIT TECHNOLOGY 2.5 x 10'' e/crn2 PAGE 3 OF 5

CIRCUIT TECHNOLOGY I r =/em2 PAGE 5 OF 5


2N2484, Texas Instruments


! 50 JPL Technical Memorandum 33-763

llll._---ll_- --.-.---- 4 . , . . . , .. ,. . , , . . . x

L - ..Q

JPL Technical Memorandum 33-76;


5 10 l2 ./cm2 PAGE 5 OF 5


---- . . . ,

2N26C5, Circuit Technoloav

i i I

I

1 i.

I


1.111112


I 0"

JPL Technical Memorandm 33-763

I

B

- -

I o - ~ A I I l l I I l l L I I I I I 1 .

0.01 2. I I G.01 0. I I

IC, mA IC, mA

I I 1 1 1 1 I 1 1 ' - 2N2605 - - CIRCUIT TECHNOLOGY 1 lo1=.,'cmz

- - PAGE s OF 5 - \

-- '1 -

_ I I 1 1 1 I I I I

2N2605 -

- CIRCUIT TECHNOLOGY , 5 2 1ol2 .,em2

- PAGE 4 OF 5 a

- a

10-I


5 . 10l2 c 'cm 2

PACE 2 OF 3 I

2N2658, Solitron


2N2605 TEXAS INSTPUMENTS

1 ,. .;em2 PAGE 3 OF 3

-- s, -MEAN 4 317 -- --


.. . -. - . -- ---- --------- . - -- u

?

4-

lo0 , I I 1 1 1 1 I 1 1 1 1 I I I d - 2N2650 SOLITRON

- - 5 r lo t2 e,,cm2 -

PAGE 4 OF 9

- \

- w 1 i

< - a -

- - - - - - -

- , -

I 0-3 + I I a l l I I I # [ I I # I

1

! 1 10 100 loo0 IC. mA

j 18, I I I I 1 I I 1 1 1 I I I I -

2N2650 - SOLIROK

- - 1 \ ,013 ,. cm2 -

2.5 MeV PAGE 5 OF 7 i -

- 4

4: - I

a

-

l 1 I I l l 1 1 I 1 1 10 Ial

IC. mA

JPL Technical Memo randurn 33 - 76 3 57

SOLITRON I x l0I3 e/cm2

PAGE 6 OF 7

2N2658 SOLITRON

5.5 bbv PAGE 7 OF 7

2N2857, Motorola

3

O~ntiw Point

JPL Technical Memorandru.. 33-763 ! ir

x r.&

2N2U7 MOTOROLA 5 * 10l2 ./,m2 PAGE 2 OF 3

2N2880, Solitron

i

I T i JPL Technical Memorandum 33- 763

B

? .


' N. I.'.... - ..--. .* . .. ..- ..., ,. . .. -. - . .

f - r

SOLIIRON I x e/cm2 PAGE 3 Of 3

: .

JPL Technical Memorandum 33 - 76 3 6 1 t

4 .. ."%

2N2907, Motorola

JPL Technical Memorandum 33-763 xs

f ,,

I I I I I - I


JPL Technical Memorandum 33-763 i

- 4,

I 1 1 ' 1

MOTOROLA

I z 1013c c n 2 UNSATUk ATED PAGE 7 OF 9

-

C

2h2907A '"7 MOTOROLA

5 . 1 c 2 1 UKSATURATED PAGE 8 OF ?




-a- 3

TEXAS lh;STIU~LhTS

1 . 1 0 ~ ~ . c m

SAIJPi\Tt3 P 4GE 4 CF 9 1


10-2 - 1 I 1 1 ) 1

2 N 2 9 0 7 TEXAS INSTRUMENTS - 5 x l o t 2 c m 2 SATUCATED PAGE 6 OF 9

-

10-1 I 1 I 1 1

2 N 2 9 0 7 TEXAS INSTRUMENTS -

t I , 1013 c cm2 SATURATED PAGE 7 OF Y

2 h 2 9 0 7 TEXAS INSTt U M E h T S

5 . 1 9 " e c T 2 LJhSATUh ATED PAGE 0 OF ? I


: 7-1

TEXAS IhSTRUhrEhTS

I . ,,? UhSATLlRATET) PAGE 9 OF 9


1 1 :

\ JPL Technical Memorandum 33-7 6 3

I------ '~WJ ' ' T E X A S I h S R U M E h T S

?.j 10'' c w 2 SATUI. 4 T E C P4GE 3 OF 8 i


\ HIGH POPULATION

lo-.' 0.01 0.1

Ice mA

1 : k JPL Technical Memorandum 33-763

i 1 ;

2N2320 i t > AS IhSTRUMEhTS

5 . ' m 2 UhSATUKATtO PAGE 70F 8


2N2975, Fairchild Semiconductor

JPL Technical Memoranduj r l 33-763

.-. - . . +

' A, E JPL Technical Memorandum 33 -763

PAGE 4 OF 5

5 2 . 5 , M E A h 3 0

2N3057, Raytheon

1 L h 2 9 7 5

5 10 r ;n

PAGE 6 Of 6

t2 .5 ) MEAN . 3~ ' 5 . 5 1 M E A h . 3 m

W

JPL Technical Me )randurn 33-763

$ 2 . 5 M ~ L '

- g 3 M c V

$ 5.5 M C . ~

1 I

9 2 . 5 Me'J

I 0 - j G.51 i l 3.01 0.1

- x 3 M c , ;

p i . s h t e 4

- I

IC, mA Ice mA

l a 4

2h3057 LAYTHEON

I 1 0 ~ ~ ~ c n 2

&AN 3u- - PAGE 3 OF 3 --

I I ' " I ' ' I - - 2N$057 RAYTHEON

5 . 1 0 ' ~ ~ c n 2 PAGE 2 OF 3 -

- - - - - 4

- -

lo-2 - d

- - - MEAN -0.00097

i (h4lN 4 . ~ 1 2 6 )

JPL Tech~ical Memorandum 33-763

I O - ~ - -

~-0.000181

- - - - - -

- 10-4

0.01 0. I 1 13 la0 loo0

I C , mA

I 1 1 1 ~ I 1 1 1 ~ I 1 111~ I I l l ? I l l

2N325 1 . Motorola

ZN325 lA MCTOPOLA , 1 \ t. r m'



TEXAS INSTRUMENTS

i PAGE ? OF 3

*

* 1

t

2h3~50 TEXAS I ~ S T P U M ~ NTS

1 \ <,-

i PAGE 3 GF 3

* 3

t * GUTLIEPS


2N3440, RCA

2N3497, Motorola -


2N3499. Motorola

2N3501, Motorola

3 PL Technical Memorandum 33 - 7 6 3

lo-' ' \MEAN ~ L T 2lv3Ml MOTOROLQ

5 cm2 , <TLlERS INCLUDED PAGE 2 OF 3

LN3637. Motorola

13-I


.- . - I

MOIOROLA

5 I O ' ? ~ c m 2 I \ - - \

OUTlllH INCLUDED PAGC 3 OF 3

\ \ MEAh . Jo \

JPL Technical Memorandm~ 33-763 8 1

2N3b37 MOTOROLA 1.25 . 1012 a, cm2 SATURATED PAGi r OF 10

7N3617 MGTOPOLA

RE~RODUCE! lTY OF THE O M m A L pACJ1I IS POO&

JPL Technical M~n.orandum 33-763

2N3637 MOTOROLA

5 \ 10'2 e '"I2

UNSATURATED PAGE 9 OF 10

2h3637 MOTOROLA

1 . UKSATUkATED PAGL 10 OF 10

JPJ Technical Memorandum 33-763

2N3742, Motorola

2N3805, Fairchiid Semiconductor


2N4044, Circuit Technology

lo-2


. I $ 1 8

2N3805 F AlRCHllD

I 2 2 - 5 . 1 0 e c m PAGE 2 OF 3

1 o - ~ 1

0 .d1 0.1 1

lC, mA


KD6001, KMC Semiconductor


MQ2219, Motorola

ZPL Technical Memorandum 33-763

JPL Tec!mical Memorandum 33-763

MQ2219A * MOTOROLA 1.25 10I2e cmZ SATURATED PAGE 4 OF 10

MEAN + 3o

* OUTLIER 1


10-I : 1 I 1 1 1 I I I l l I I I 1

- MQ2219A MOTOROLA

- P 2.5 * 1012 efcm 2

VCE = 0. IV SATURATED PAGE 5 OF 10

- MEAN 3u -

1 0 ' ~ - -

- : 1 VCE 0.1'4

," ,I. r - 4 -

- iVCE 0.25" -

I o - ~ I I I l l I , , , I I , k t

I 10 100 r wo IC' mA

10-I - I r I 1 1 I I 1 1 1 I I I I '

- - i MQ22I9A

MOTOROLA - VCE = 0. IV 5 x 1012 cm2

SATURATED - 'PAGE 6OF 10

- 9 MEAN * 3o ,

a

10-2 - 4vcE 0.1" - - -

- Y - u. f - - a - -

I O - ~ - - -

-

-

I o4 I I i l l I I I l l , , I , I 10 100 loo0

Ice mA

MQ2219A MOTOROLA

5 x 10' ' e/cm2 UNSATURATED PAGE 7 OF 10

1 1 1 1 I I I 1

\ MQ2219A MOTORCLA -

\ 1.25 * 1012 cm2

\ UNSATURATED - \

PAGE B OF 10

\ -

T \MEAN + 3u -

- W < zi lo-3- I-. -- - -

- i -

I o ' ~ 0-0.0054 r 1 I 1 I I I I 10 100

REPRODUCIBILITY OF THE ORIGWAL PAGE I8 POOR JPL Technical Memorandum 33- 763

*TOROLA

2.5 x 1012 ,/,m2 \MEAN ' 30 UNSATURATED

PAGE 9 OF 10

MQ2905, Motorola

J MQ22l9A MOTOROLA - 5 x lo1? ./,m2 - UNSATURATED

i k JPL Technical Memorandum 33-763

lr

MQ2905 MOTOROLA 5 * lbl' e/cm2 SATURATED PAGE 3 OF 10

@9


M Q 2 9 0 5 M O T O R O L A i 1 . 2 5 , 1 0 ~ ~ e / c m ~ SATURATED PAGE 4 O F 10 i

M E A N 4 3a -I

MQ2905 M G T O R O L P

2 . 5 r 1012 cm2 SATURATtD PAGE 5 O F 10

ALL VALUES

1 I I 1

I C I 0 0 I(UO

JPL Technical oran and urn 33-763

,

SATURATED PAGE 6 O f 10

M C T O K O L A

5 . ,m2

JPvSATUPATtD P A G L 7 O F 10


~ - - - -. . - .

MQ2905 MOTOROLA

1.25 . 1012 e Em2

UNSATURATED PAGE 8 OF 10

!

MQ2905 ArOTOROLA

2.5 h 10IZ e/cm2 UNSATURATED PAGE 9 OF 10 1


' 1 -

. . /'

10-I:

r:

I 1 0 - ~

i 1 j -

i W

j 5 z i i "

I _I i - < . , 1 o - ~

/ ; ,

- I ' I

1 o - ~

. , IC. mA ! I t -

r j I

MQ3467, Motorola I I i I

I

' I

I

I

J i i j i i ; 1

i f , .

I J ' .

, .

I i

P

,. . P

I JPL Technical Memorandum 33-763

I

1 I 1 , I 1 I I I ( 1 I I I ' - MQ2905 MOTORCLA - ~ X I O ~ ~ . , , ~ ~ - - UNSATURATED

PAGE 10 OF 10

- * : OUTLIER -

- - - - -

- * -

- -MEAN * 3 0 : :: - -

I I I M i I I I l l I I M I

0.1 1 10 100

...' x \

r :

, . . .

JPL Technical Memorr: durn 33-763

MOTOkOLA

1.25 x 1012 c c m

PAGE 5 OF 7

JPL Technical Memorandum 33-\ 63

- - -, -

7---- I I I 1 I r 1 1 1

MOTOROLA

2.5 . 10" c c m PAGE b OF 7

hnOTOhOL4

5 1012 < c m 2

PAGE : OF I i

MQ3725, Motorola

REPWDUCBlLITY OF TIIE] OKIGR3AL PACE I6 POOR JPL Technical Memorandum 33-763

!!


--- lo-) ' 7 1 r - 7 - r

\ MQ3725 MOTOROLA

\ VCE O.ZV 1 1ol2. ,m2 -

\ PAGE 5 OF 9

- u tA

L - a

io-" -0.0lb3 1

!

4

I

I

10 1170 o -A 11)w IC, m i *

MQ3725 MOTOROLA

2 . 5 . 1012 al/cm2 PrcE 7 OF 9 i


PA7443, Raytheon

MOTOROLA I l o13 ./m2 PAGE 9 OF 9

MEAN * 3 0 4


PA7443 RAYTHEON 5 x 10" e/cm2 SATURATED PAGE 4 OF 9

a

PA7443 RAYTHEON 1 . e/cm2 SATURATED PAGE 5 OF 9

- w

f - 10-3,: a

I o - ~


I I

10 100 loo0

J

Vcf = 0.4V

- VcE : 0.3V I ~ v c E o . . . - MEAN - 0 M I N : 4.00079 -0.00004

PA7443 RAY1 HEON

10-2 - tb 1.25 loi2 e/cm

SATURATLD T

VCE = 0.2V PAGE 5 OF 9

(1

' VCE - 0.4V

T, VCE - 0.3'1

Y

5 ?j - I . ' ? vcE = -4

I 1 -0.00032

1 1 I 1 L-

I 10 1 oil _1 1000

f + OUTLIERS

PA7443 RAYTHEOt:

1.25 r 1012 e/cm2 SATURATED PAGE 7 OF 9

JPL Technical Memorandum 33-763 F

SA2267, Raytheon


I I I l l I 1 I I * 10-I

I

SA2267 RAYTHEON - 2.5 x 1012 e/cm2

10-2,

a

P4G; 3 CF 5

- * OUTLIER - M A N + 3 0 - 3

- -

-

c

10-2 t -

SA2267 r RAYTHEON -

I 101

f t

"

VCE 0.4V -

y1

f ( t z

t PAGE 2 OF 5 -

3 - (b

- k u

* OUTLIER - /*AN 4 3q - 0vCE = 0.2V

10-4 I , , ; , o - 3 , ~ . ~ ~ q 4.0024 -0.0169 1 - 8 d 1 I I T I 1 1

I 10 I W 1 10 100

Ice mA Ice mA

\tCICC 0.3V

- -0.0188

- - - (b

vc, = 0.2v

- vcE - 0 . 4 ~ 9

() VCE = O.3V -

lo-' - I I 1 1 1 I I I 1 - $A2267 - RAYTHEON - 5 x lo1* ./m2 - -

\ PAGE 4 OF 5

\ '. - \ M A N + 3 0

- a . --

14BB 10 1, Solitron


- I- I I 1

1488101 SOLITRON

I \ e cm2

\ VCE SATURATED

PAGE 2 OF 5

1488101 SoLIlKOrJ

12 2 5 2 I0 e c n VCE SATURATED

PAGE 4 OF 5

MEAN 30 -----

1488101 SOLITRON

2.5 10li c. cm 2

VCE SATURATED

PAGE 3 OF 5

JPL Technical Memorandum 33-763 1 ' .

5; +

I 0-I I I 1

1488lOl SOLITRON

I =, cm2 VCE SATURATED

PAGE 5 OF 5

96SVl3 1, Solitron

96SV131 SOLlfPON

2.5 X 1012 e/cm2 PAGE 2 OF 4


3029-201 -1, Raytheon *

1 96SV I3 I SOLITRON I lot3 - PAGE 4 OF 4

MEAN t 3u !9. - -

I o - ~ 1 1 I I

1 10 loo IC' A


- - - - ------ . . Ta-* -,

3029-202- 1 , Raytheon

10-I-. 1 1 I

3029-201-1 RAYTHEON 1 1013 e,,cm2 . PAGE 5 OF 5

\


-

0

-

,lo)

/-

-

10 100 1000

Ice mA

I o - ~ I A

3029-202-1 RAYTHEON

5 > c cm2 PAGE 2 OF 3

3029-202- 1 RAYTHEON

I r dCm2 PAGE 3 OF 3

SDT3303, Solitron


. . .-. -- .- - " ------ --" i " . *;

5 . 1 0 " e cm' PAGE 3 OF 4

- - - M E A N + 3s -- ---


10-I - I I 1 1 1 I I 1 1 1 I I I l l I 1

SOT3303 -

- SOLITRON - I - PAGE4OF4 -

- - - g 10-2- z -

- -

- -

10-3 a I I l l I I 1 1 ~ I I I # I I 10 1w 1000

IC, mA

SDT3304, Solitron


10" - I I 1 1 1 I I I I 1 I I I 1

SDT3304 -

SOLITRON - 5 \ l 0 l 2 e/cm2

- PAGE2OF3 -

5DT3304 SOLITRON

I y loi3 c / c m 2

PAGE 3 OF 3


L * '-

SDT3323, Solitron


SDT3323 SOLITRON 5 w lo1' ,/,m2 PAGE 3 OF 6

SD?D23 SOLITRON -1 1.25 x 1012 e/cm2 PAGE 4 OF 6 4

!

JPL Technical Memorandum 33-76; 5

5073323 SOLIAON 2.5 X 1012 e/cm2 PAGE 5 OF o

10-2 - 1 -1

- LU ------ M A N t 3 7 < - ----- . -- a - --

t r -- -.. ----

1 0

lo4 - .A -r..Y-f - -

lo4. I I a l l I I I l l I I I l l I I # 1

I 10 100 1000 loo00

LDT332, SOLITRON 5 1 10l2 ./cm2 PF >C 6 OF 6 i I


- , - - * ,*;


9

10-I 1 I I I 1 I I I I

SOT3103 SOLITRON 5 x l 0 ~ ~ e / c r n ~ - PAGE 2 OF 4

lo-2 - ' \U*N +3t, -

1 0 ' ~ 1 a I I I 1 1 1 .

10

id loo lrn

IC' '"A

JPL Technical Memo randurn 33-763

- _ - . . _ % _ . . . - - ._ - - * - ' , 3 . - - . . , .. . . . - .. ::- -. . , . .. -. . - . . - . . . - .. . . -- - - -. . ..- -. . - . - - - - - - .-. . - -

JPL Technical Meunoranclun~ 33-7 6 3

IL Ire m- 11-I


- . . I 1 1 1 1 1 8 -

JPL T e b i c d Memorandum 33-763

132 JPL Technical Memorandum 33-763


I:

..g

. . , i.

Wi

, 6;

I:'

p

<

p

i! - ?

I.

I '

SDTS553, Selitron (IRAN reirradiation)


JPL Technical Memorandum 33- 56 ?!

SDT8805, Solitron

SE7056, National Semiconductor

SQ 1099, Motorola

JPL Tech- ical Memorandum 33-76 3

. . . - - . -. . . .. . ., , - ----------

,, , . -.- . '

PAGEIOF4 .

M A N 38 -----3-,-->

I


142 JPL Technical Memorandum 33 -76 3

- 6 ' , . f . ..

------- - .. .. ' ' . - m .

b

. - .. . -- I ' ' ' ;

.

B. JFETe d


- .d. * -. -

, .

i

I : I ;

1 : 4

i

2N2608, Siliconix

I 1 '; 1 i

d i I ; I . ~

T 1

$


--- - - .. - ----- ." --- - , .

2N3066, Silicanix

2N333 1 , Siliconix


2N3382, Siliconix

2N3686, Solitron -

. ~ - I' . ~- 1' . - -. 1

I : I .

/ i

i I i i i I

j I I

4 I i I j

4

1

n i

0

1

I * I : 1 ; i , I

I i i


2N3824, Circuit Technoloa

2N4093. Siliconix


2N439 1, Siliconix

148 m m m OF 0- , a . PAGE I8


, .,,.

2N4392, Siliconix

2N43 93. Siliconix


2M4416, Siliconix

I i

2N4856, Siliconix

JPL Technical Memora~ndum 33-763

2N4856, Texas Inetruments

2N4858, Texas Inetruments


JPL Technical Mali-orandwn 33-763

2N5520, Siliconix

JPL Technical Memorandum 33-76?

2N5556, Motorola

2N5906. Siliconix


C. INTEGRATED CIRCUITS

ADSSO, Analog Devices

The data presented are device linearity deltas; i. e., the effects of

LSB current changes are subtracted out of the data. For tak l esror for any

given bit, the A1 LSB must be multiplied by the bit ,tightin$ and added to the

value shown in the data. F'arameter AVBE was not stable due to servo loop

biasing and collector-base leakage current problems. Parameters AVBE

and A ( ~ / B ) are for the DUT reference transistor.


DAC-01, Precision Monolithice

JPL Technical Memorandum 33 -76 3 i

DG129, Siliconix, IRAN reirradiation

I

DC 1 3 3, Siliconix

B~~RODUCIBILITY OF THE O u a A L PAGE IS PcnP JPL Technical Memorandum 3:-763

DG133, Siliconix, IRAN reirradiation


DG 14 1 , Silicenix

JPL Technical Mer~lorandum 33-76 3

DG 141, Siliconix, IRAN reir radiation

DG181. Intersil


DG 1 8 1, Siliconix

I _^ -- - _ ---- Arn?'.'Li~.? .?I .- -- u + - . 1 . 'L --

1 - 7

m i -

JPL Technical Memo randurn 3 3-76 3

! 1 JPL Technical Memorandum 33-763

:

I JPL 'Lechnical Mernorandrlm 33-763

HA2520, Harris

170 JPL Technical Memo andurn 33 -76 3

HA2600, Harris

JPL v - chi-ical Memorandum 33-76 3

HA2620. Harr i s

JPL Technica I Memorandum 33-763

HA2700, Harrie, Flatpack

JPL Technical Mem~randurn 33-763


7 . . f, C .

HA2700. Harris. TO-98 f DIP


JPL Technical Memo randurn 33-7 63

ICLSOOS, Inter a i l


JPI, Technical ketnorandunl 33-763 h q

d

* ....

ICLSQ18, Intersil

The d a b presented are device linearity deltas; i. e., the effects of

LSD current changes are subtracted out of the data. For total error for m y

given bit. the AIuB mu& be multiplied by the bit weighting uld added to the .. .

value shown in the data. Parameter AVBE was not stable due to servo loop

- biasing and collei. tor-base leakage current problems. Rrameters AVBE a and A, 4 /B) are ir i- the DUT reference transistor.


JPL Technical Memo randutn 33-76 3

LM10 1, National Semiconductor

JPL Technical M e m o randm 33-76 3

LM10 1, National Semiconductor, IRAN reirradiation

I JPL Technical Memorandum 33-763

I

LA4 102, National Semiconductor, unhardened

LM102, National Semiconductor, hardened


LM103, National Semiconductor

LM 105, National Semiconductor, unhardened


LM 105, National Semiconductor, hardened


JPL T e h i c a l Memorandum 33-763 ,-

LM108, National Semiconductor, unhardened

190 JPL Technics Memo randurn 33-763

LM108, National Sedconductor, hardened

~ B C B I L r n OF THE OR!i@Olbt PAGE 18 POOR ISL Technical Memorandum 33-763


@L Technical @emorcmdbrn 33-763

t-- . + ' ' ! . ' *

. . ._ 1

I " , - T

b . .

I .$i,

-: 7-

LQdl 1 1. National Semicanductor. IRAN reirradiation

LM 124, National Semiconductor, unhardened



- 1 -4

LMl24, National Semiconductor, hardened

k


LM13Y. National, Signetice. and Texas Instrumente

The data presented herein represents eight radiation tests for various

vendors and date codes using different bias and measurement conditions. In

all c ~ s e s , two sections (of the faur-section device type) were tested. Device

fai. \.re is defined as saturation of the null amplifier during dc measurements;

i. e . , the device output is latched to the positive supply voltage. Table 3 i s

ir summary of the number of failures versus fluence for the various experi-

mental conditions and device lots.

National Semiconductor made various attempts to harden the LM139

with mly partial success. Several radiation tests were performed on these

expezimental devices, but only one lot (E2035, tested 11-25-75) was avail-

able for flight use and consequently included herein.


Tab

le 3

. M

I3

9 q

uad

co

mp

ara

tor

rad

iati

on

test

su

mm

ary

3/1

0/7

5

IY3C

S

Laa

d.r

d

402

and

502

4/l

h/7

5

NSC

(LM

33

9)

403

Sta

nd

ard

11

/7/7

5

NSC

Sta

nd

ard

406

.IS

to

. 7

11

5

to. 7

ld

urr

ns

mm

aml

t50

mV

O

n

Gnd

- I30

mV

O

II

Gad

tWm

V

On

Gnd

-13

Om

V

Off

God

+S

O m

V

On

Gnd

God

off

1

50

mV

-50

mV

O

o

Gnd

Gnd

Off

t50 m

V

SO

%d.

tl*

b

-pule

.

b

% C

. pl

..

I-

t+

0- ps.

iv.=

3

0

0

0

0

1/

55

NSC

Har

den

ed

LM .

11

5

10

.7

I-

e5

0m

V

On

3 0

0

0

0

U0

35

1

1

Gnd

1-

Gnd

off

3

o o

e 3

It

+W

mV

7

/3/7

5

SG

X

Sta

nd

ard

7437

t15

+O

. 7

I-

15

0 m

V

On

5

0

0

0

0

It

Gld

I C

nd

Off

5

0

0

0

5 2,

tW

mV

'nu

ll

am

pla

frcr

sa

tura

td d

urs

ns dc m

cam

ur.m

ontm

lo

r one o

r m

ore

pra

met.

ra.

bln

pl)

11-1

- 0

to

100 m

V.

50'.

duty

cy

cle.

la

pt (

It)

5

0 m

Vdc.

In

put

12-1

0

to

100 m

V.

% p

s p

d8m

o

r.^ 3

m.

Lnp

ut 1

8.)

- 50

mV

dc.


. - . --. . - .'# f

Conclusions reached were a s follows:

(1) The LA41 39 type device is ve sensitive to radiation damage. & (2) The devices biased "offH during radiation a r e more censitive to

degradation than devices biased "on" during irradiation.

(3) Device degradation may vary significantly between different date

cedes.

(4) The degradation for the devices pulsed a t 50% duty cycle is

comparable to the devices biased "onH during radiation.

(5) The degradation for the devices pulsed a t 56y sec every 3 sec

is comparable to the devices biased "off" during irradiation.

( 6 ) The parameter degrMation of the devices irradiated passively

was slightly worse $an the devices biased "onv during irradiation.

(7) The hardened National Semiconductor devices, using the same

bias conditions, did not fail until 5 X 1012 e/cm2, whereas the

standard devices failed at 2.5 X 1012 e/crn2. The hardened

devices showed significantly greater degrad~uon in sink current

than the unhardened devices.

(8) The low failure rate for the 12/20/74 test was due to use of

a supply voltage of 5 instead of 15 volts.


Id- - .I -- -3- - 0


LM 139. National Selniconductor, hardened

JPL Technic= Memorandum 33-763

LM 139, Signetice

JRL Technical Memorandum 33-763

LM139 (LM2901). Texas Instrument8


j

JPL Technical Memorandum 33-763 i

LM9 10. Nat5onal Semiconductor



BEPRODUCIBILITY OF THE F Tf'W*t PAP- TQ Wqn


MIC236, Motorola

MIC336, Motorola

D. ZENER DIODES

The radiation analysis ca r r ied out by General Electric largely f r o m

neutron data indicated potential shifts in Zener voltage sufficient to cause

problems in some applications. Electron irradiation at 2.2 MeV caused 2 relatively minor shifts in the Zener voltage a t fluences up to 1 X 1013 e / c m .

Additional measurements were therefore car r ied out with 3 and 5.5 MeV

electrons using the high voltage VandeGraaff a t Notre Dame University.

The Zener voltage was determined both before and af ter radiation at a

fixed current level by means of in situ measurements. This made it possible

to determine the radiation-induced change in the Zener voltage to an

accuracy of *1 mV by relatively simple means. The experiment lasted less

than one half hour and the radiation-induced thermal heating is not signifi-

cant, s o that thermal changes during the t ime of the experiment may be

ignored. The absolute value of the Zener voltage, which i s a strong function

of the Zener current, has been determined to an accuracy of about ~ 1 0 mV.

The results of the measurements a r e summarized in Table 4. It may

be noted that the majority of the devices tested do not change by more than 2 the experimental e r r o r a t a fluence of 5 X 1012 e / c m for a l l energies up to

5.5 MeV. Three device types showed a significant linear change in Zener

voltage with electron energy, a s shown in Fig. 2. One of the device types

indicated a positive voltage shift, w h ~ r e a s the other two indicated a negative

voltage shift. These changes a r e attributed to bulk radiation damage.

Some devices of the 1N829 showed changes a s great a s 12 mV, whereas

the remainder stayed within *l mV. The anomalously large changes were not

energy-dependent, and a r e therefore considered to be due to a surface

ionization effect.

Very few of the Unitrode U28770 and U28775 high voltage Zener diodes

were available fo r testing, and these showed shifts f rom -14 to -120 mV.

The 14-mV value i s within experimental e r r o r . In cases where very few

devices were available, devices were f i r s t irradiated to a fluence of

1 X 1013 e/crn at 2.2 MeV and then reirradiated a t a la ter data with 3.0

JPL Technical Memo r a ~ d u m 33-763 i ,?

Table 4. Electron radiation effects in Zener and reference diodes

Max, AVZ Electron

Device type Manu- VZ, 12, fac ture r V rnA at 5 10" energy range,

e/cm2, MeV m V

.&vikes with Zener voltage change within measurement accuracy of t l mV *.

1N945 TC Zener MOT 11.7 7 .5 - 1 2.2 - 5.5

1N4569 TC ref. diode DIK 6 .4 0 . 5 - 2 2.2, 5.5

IN4572 TC ref. diode DIK 6 .4 1 .0 2 .2 - 5.5 I -1.9 i

IN4577 TC ref. diode MOT 6 . 4 2 .0 0 2.2 I 1N4895A TC Zener DIK 6.35 7 . 5 - 1 2.2, 5.5

(ult rastable)

MZ827 TC Zener MOT 6.2 7 . 5 - 1 2.2 - 5.5

.4M4.7AZ1 non-comp. MOT 4 .7 5 t2 2.2 - 5 .5 Zener

.4M5.1AZl non-comp. MOT 5.1 5 * 1 2.2 - 5.5 Zener

Devices with Zener voltage change within measurement accuracy of *1 mV, but with mavericks showing g rea t e r energy-independent change

1N829 TC Zener MOT 6.2 5 .5 -2 2.2 - 5.5

Devices with l inear Zener voltage change with energy I

IN93 5 TC ref. diode MOT 9.0 1.0, -ve 2 .2 - 5 .5 i I

1 N4907 TC ref. diode MOT 12.8 2 - ve 2 .2 - 5.5 1 I

( s e e Fig. 2)

FCT 1 12 1 TC ref. diode FAS 6 .8 0. i t v e 2.2 - 5.5 i ( s e e Fig. 2 ) I

-

a Maverick.


Table 4 (contd)

Max. AVZ Manu- a t 5 ~ 1 0 l ~ Electron

Device type e / cm2, energy range, facturer

mV MeV

Devices with significant Zener voltage change measured only a t 2.2 MeV

IN4581 TC ref. diode DIK 6.6 4.0 - 4 2.2

IN4891 TC ref. diode DIK 6.4 2 . 0 s - 12 2.2 (ultrastable)

7 .5 - 8

High surge non-compensated Zeners

UZ8770 UTR 70 0.05 t i 4 2.2

o r 5.5 MeV electrons. No conclusions could be drawn from the data obtained

from the second irradiation, primarily because most of the Zener voltage

shifts were within experimental e r ro r .

An attempt was made to measure changes in the temperature coefficient

of the temperature-compensated (TC) Zener diodes produced by a fluence of

1 x 1013 e/cm2 at energies of 2.2, 3 .0 and 5.5 MeV. These measurements

could not be carried out in situ and were therefore subject to many system-

atic e r ro r s . The main conclusion is that the pre- i r radiation temperature

coefficient of different devices of one type varies within one order of magni-

tude, whereas the radiation-induced changes a r e less than 50% of the initial

value. The temperature coefficient from -50 to t25"C decreases with

radiation, whereas the temperature coefficient from 25°C to 75°C increases

with radiation. No correlation with electron energy could be detected.


ENERGY. MeV

Fig. 2. Zener voltage change with energy

JPL Technical hlemorandum 33-763

.4M4.7AZ 1, Motorola

.4M5.1AZ 1. Motorola

JPLl Technical Memorandum 33-763

1N829, Motorola

1N935, Motorola

@ ' -


1N945, Motorola

I I I I I 1 1 I I I I I --

I l l I I I I I I


"F - c

1N4572, Diekson

1 ~'i577, Motorola



--. 7-..-- - I. I

1N4895. Dickson

1N4907, Motorola

JPL Technical Menlorandurn 33-763

FCT 1 12 1 , Fairchild Semiconductor

1 1

LVA3100. TRW


. -..---- - - - a

M2827, Motorola

I I I ! I I I I I I I

1 I I I l l

I I

U28770, Unitrode


U28775, Unitrode


E. CONSTAKT CURRENT DIODES

1N5288, Motorola

1N5290, Motorola

JPL Technical M e m o randurn 3 3-76 3

1N5297, Motorola

1N5300, Motorola


DIODES AND RECTIFIERS

IN571 1, Hewlett-Packard

1


BC997, Texas Instruments

FJT 1 100, Fairchild Semiconductor


--- I

MV1404, Motorola

UTR4320, Unitrode


2N1878, Unitrode

2 32 JPL Technical Memorandum 33-76 3

---- ".. - - --- --. - . -

G . CAPACITORS

B 1 lB, Component Research, Teflon capacitors


. -

H . RESISTORS

CDP16-01-103G. Dale Electronics

CDP16-01-104G, Dale Electronics


CDPlb-01-223J, Dale Electronics

CDP16-01-563J. Dale Electronics


CDP16-01-6835. Dale Electronico

CDP18-02-393K, Dale Electronics


LDP16-01-153G. Dale Electronics

SDP16-02-473J, Dale Electronics


MG720, Caddock Electronics

MG750, Caddock Electronics


MMl 25, Caddoclc Electronics

MS176, Caddock Electronics


I. OPTICAL DEVICES

The Texas Instruments Types TIL23 and TIL24 light sources and types

TIL601 and LS600 light detectors were evaluated in the J P L Dynamitron

using a 2. 5-MeV electron beam. Two of the tests used a 0.32-cm (1/8-in. )

spacing between the source and detector in order to evaluate the spacecraft

usage conditions. Three tests used a spacing of 20 c m (8 in. ) in order to

allow shielding and consequently evaluation of the source o r detector separ-

ately. I r addition, various angles were used during irradiation in order to

reduce the amount of shielding caused by the lens material. All of the

zevices were measured in situ, within a period of 5 minutes, with the beam

off.

1. Tests Using 0.32-cm (1/8-in. ) Space

Test results using a 0.32-cm (1/8-in.) space between the light source

and detector with both device types irradiated a t the same time unshielded

were a s follows!

Test No. 1. Four TIL23 light sources acd {our LS600 light detectors

were tested on April 15-29, 1975. The test circui' i s shown below:

TIW 6 SOURCE

Due to the close spacing between the TIL23 source and LS600 detector and

the presence of the glass window, there i s an undetermined amount of

shielding of the device from the electron beam. Consequently, exposures at

a number of incidence angles for the electron beam were used ( i . e . , 45, 90,

and 135"). a s shown below, during the test.

I ' 135' BEAM

JPL Techilical Memorandum 33-76 3

C u r r e n t n ~ r a s u r d a t point@ )rA ( 9 - fluence. e,'rrn5; 6 = flux. e / c m 2 8 ) Beam

Dtbvice Date. I2 I2 I2

Angle. 1975 .L' ( p z o C D . l X I 0 , .." 9 - 2 . 5 ~ 1 0 0 ~ 5 x 1 0

bvWo 4 = 2 . 5 1 109 deg + = 0 + = I 109

- 6 = 1 . 5 109

I2 3 50 213 - 39 I20 -66 55 -84 45 4 -15

I 470 390 -17 320 - 32 2 34 -50 135 4-16

L 282 205 -27 I34 - 53 7 5 -73 45 4-16

3 0 0 213 -28 0. 36a a 19 -68 90 4-29

--

' ~ a t a invalld: the dv\ ice accidentally pulled out of position during i r rad ia t lon .

Test No. 2. Four LS600 light detectors and four TIL24 light sources

were exposed on January 22, 1975, to the electron beam at a 60" angle

(see Fig. 3). The fluence was 5 X 10'' and 1 X 1013 e/cm2 with a flux rate 0 2

of 2.5 X 10 ' e/cm /s. There was no significant change in the output level

a s measured a t point @ for any of the devices tested. Although the test

devices were undoubtedly severely degraded (as indicated from previous test

experience), there was still sufficient pulsed output after radiation exposure

to trigger the 2N2222A transistor "on, " therefore maintaining a constant

output a t point @. The test circuit is shown below:

CIRCUIT 1 f


PULSE AT @, CIRCUIT 1

TlU4 LIGHT SOURCE

CIRCUIT 2

2. Tes t s Using 20-cm (8-in.) Space

Test resul ts using 20 cm (8 inch) of spacing between the light source and

detector with one of the device types shielded during irradiat ion were a s

follows :

Tes t No. 1. Four TIL23 light sources were exposed t o the e lec t ron

beam a t an angle of 45 deg as shown in Fig. 4 with the detector shielded. The

t es t circuit is shown below:

Tes t No. 2. Fou r TIL6Ol light detectors were exposed on January 22,

1975, to the electron beam a t a 45-deg angle a s shown in Fig. 4 with the

light source shielded. The te3t circuit i s shown below:

Device S/N

5

6

7

8

LIGHT SOUPCE


A, %

-98.3

-98.3

-96.4

-98.0

TIL23 output voltage measured a t point @ m V

( a = fluence, e/crn2; + = flux, e/cm2/s)

@ = 0 + = 0

0.240

0.360

0.140

1.900

@ = 5 ~ 1 0 12 + = 3.6 x lo9

0.014

0.022

0.014

0.116

a, %

-94.2

-94.0

-90.0

-94.0

i9= 1 ~ 1 0 13 9 = 3.6 X 10'9

0.004

0.006

0.005

0.038

TIL601 cur ren t measured a t point @, nA ( o = fluence, e/cm2; + = flux, e/cm2/s)

Device S/N a = o @ = 5 x 1012 a = 1 1013

4 = 0 + = 3.6 x 109 A" 0 = 3.6 x 1019 A,+

1 250.0 129.0 -48.4 38.0 -85.0

2 96.0 19.2 -80.0 8.0 -91.7

3 160.0 65.0 -59.4 19.0 -88.1

4 112.0 78.0 -30.4 53.0 -52.7 i

i I

Tes t No. 3. Four TIL24 light sources were exposed to the electron

beam a t an angle of 45 deg a s shown in Fig. 4 with the detector shielded.

The tes t circuit i s shown below:

SHEU)ED PHOTO TRANSISTOR

MEASUREMENT POlM

2 k Q , 1%

A , '70

-95.3

-98.6

-97.7

Device S/N

- 1

2

9

10

TIL24 voltage measurement a t point 9 mv ( 0 = fluence, e/cm2; $ = flux, e/cm / s )

= 1 1013 $ = 3.6 X 109

0.015

0.003

0.009

0.016 -99.5

A , %

-85.2

-95.4

-92.2

. a = o + = 0

0.318

0.218

0.384

-93.1

0 = 5 x 1012 + = 3.6 x 109

0.047

0.010

0.030

3.000 0.208

3. Conclusions

(1) These types of optical devices a r e ve ry sens i t ive to radiation-

induced damage.

(2) The light sources a r e m o r e sensi t ive to radiation damage than the

detec tors .

( 3 ) T h e r e i s inc reased light s c a t t e r due t o the degraded s o u r c e lens .

(4) T h e r e i s m o r e apparent degradation with 20-cm (8- in . ) spacing

between the source and detec tor than with 0.32-cm (1/8-in.)

spacing because the light f r o m the source d e c r e a s e s a s the

square of the distance f r o m the detector , and any i n c r e a s e in

light sca t t e r will exhibit m o r e effect a s the d is tance i s increased.

4. Tes t Conditions

The device shown in Fig . 3 was i r radia ted with the axis of the e lec t ron

beam a t 60 deg t o the axis of the device a s shown in the d iagram in o r d e r t o

avoid the g lass lid.

h 1 ~ 4 (UMHIELDED)

APPROXIMATELY 0.32 cm (1/8 in.)

LS600 (UNSHIELDED) 0 Fig . 3 . Flux angle, e lec t ron beam a t 60 deg

No other components of the experiment were changed. A cosine va r i a -

tion in fluence with incident angle was used. The Faraday cup readings of 2 fluence were thus twice the fluence required ( i . e . , 1013 and 2 X 1013 e /cm ).

The effective vaicle of the fluence on the device was obtained a s of these 2 values ( i . e . , 5 X 10 l2 and 1":' e / cm . This was done by vsing a t ime

exposure twice a s long ra the r than doubling the flux ra te . Thus the effective

flux ra te a t the device was one-half that in the tes t requi rements .


The davice shorn in Fig. 4 was irradiated with the axir, of the electron

beam a t 45 deg to the axie of the device a e shown in the diagram in order to

avoid the glae s lid.

SOURCE OR DETECTOR AS APPLICABLE (UNSHIEU>ED)

\ON BEAM

SOURCE OR DETECTOR AS APPLICABLE (SHIELDED)

Fig. 4, Flux angle, electron beam at 45 deg

A cosine variation in fluence with incident angle was used. The Faraday

cup readings of fluence were thus 1.4 times the fluence required ( i . e. , 0.707 X 1012 and 1.41 X l o i3 e/crn2). The effective value of the fluence on

the device was obtained a s 0.707 of these values (i. e . , 5 X 1012 and lo i3 2 e/cm ). This was done by using a time exposure 1 .4 times a s long rather

than increasing the flux rate. Thus the effective flux rate at the device i s

0.707 times that in the test requirements.

P JPL Technical Memorandum 33-763 C

J. CMOS

Large quantities of CMOS devices comprising 28 different logic func-

tions a r e used in the spacecraft. Devices fabricated by the standard

commercial process could not withstand a dose of 150 krad(Si) under normal

bias conditions due to shift of the n-channel gate turn-on voltage toward 0 V

accompanied by a large increase in the supply current. By reducing the gate

oxide annealing temperature (Ref. 2 ) it was found possible to fabricate

devices that were still functional af ter irradiation to 150 krad(Si) though

somewhat degraded in the device characterist ics . A program was developed

to monitor the radiation properties of the production line that included wafer

lot sampling of changes in the quiescent supply current, test pattern sampling,

and final device parameter characterization. All irradiations were carr ied

out under representative usage bias conditions using a cobalt-60 source.

The four basic CMOS failure modes in an ionizing rddiatior environ-

ment have been identified by Burghard and Gwyn (Refs. 3 and 4) with their

associated causes a s follows:

(1) Failure to switch - (2) Excessive leakage - lVTnl I (3) Speed rc '-lction - I V ~ ~ I t (4) Noise immunity -

T I'TPI 1 The arrows indicate a decrease o r increase in V , 1 7 1

1 . Gate Turn-on Voltage

Three to five test pattern dice were selected a t random from each

metallization lot. The test pattern dice contain individual N- and P-channel

t ransis tors and MOS capacitors. Measurement of I versus VGS of the DS 5 two t ransis tors was made before and a f te . a dose of 1.15 X 10 rad(Si). A

typical set of curves i s shown in Fig. 5. The results for the N-channel

transistor a r e particularly striking. The true gate turn-on voltage V Tn

at low currents i s less than 1 1' before irradiation and shifts to -0 .6 V at

150 krad. At higher current levels V T n stays well above zero, a s shown

in Fig. 6 , and does not shift significantly after irradiation ( see Fig. 7 ) .


- . 1 1 1 1 1 1 - - . 1 1 . 1 - . 7 - -111111 1 - b. . . . . . . - t

Fig. 5. 1V- and P-channel gate drive transfer characteristics


190 DEVICES FROM 70-80 LOTS A

0 O.? 0.4 0.6 0 .8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2 .8 3.0

PREWADIATION, . V,,,

Fig. 6 . Threshold voltage of N-channel transistor on t e s t pattern TA 6372, 950°C gate oxide anneal in <arming g a s , preradiation

Fig. 7 . Threshold voltage of N-channel transistor on test pattern TA 6 3 7 2 , 950°C gate oxide anneal in forming gas, postradiation

JP1, Technical Memorandum 33-763

On the other hand, V T p a t 10 pA shows a bimodal distribution af ter rrradia-

tion,which may explain the lack of control of the propagation time (see

Figs. 8 and 9). The distribution in the relative shift in the gate turn-on

voltages i s shown in Fik. 10.

The gate turn-on voltage is the most direct way of radiation-screening

CMOS devices. However, the approach adopted in the MJS project was to

monitor the quiescent supply current, which i s related to VTn a t low

currents but does not control V TP'

Mareover, there i s no correlation in

the behavior of these two parameters , since V a t 150 krad(Si) i s Tn primarily a function of radiatiot- induced oxide states, whereas V i s a

T P function of radiation-induced interface states.

The gate turn-on voltage V i s the parameter directly affr ced by T ionizing radiation. The V i s , however, a t ransis tor p a r a m e ~ d r , not a T circuit parameter. The transfer characterist ics of any Cx40S circuit allow

considerable shift in V o r V before the circuit runctioll ceases. The Tm TP

'prn1 may even cross 0 V and be slightly negative before functiona! failure

occurs.

PHERADIAT'ON, - VT,

Fig. 8. Threshold voltage of P-channel t ransis tor 011

tes t pattern TA 6372, 950°C gate oxide anneal in forming gas, pre radia tion


188 DEVICES

. . 1.4 1.6 1.8 2.0 2.7 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8

POSTRADIAIION, 1 . I 5 . lo5 rod, - VTn

Fig. 9. Threshold voltage of P-channel transistor oc test pattern TA 6372, 950" C g ~ t e oxide anneal in forming gas, postradiation

I I I I I I I I I I I I I I I I I I I I I I I I I I I I 0 .4 0.2 0 -0.2 -0.4 -0.6 -0.8 -1.0 -0.2 -0.4 -0.6 -0 .8 -1.0 -1.2 -1.5 -2.3

v v AN-CH VGS AT IDS 10 p A AP-CH VCS AT IL -10 FA

N-CHANNEL P-CHANt.CL

Fig. 10. Distribution of A'dGS at IDS after 1 . 5 x 1015 rad(Si)


2. Wafer Screening of ISS


Wafer screening consisted of irradiating five circuit devices o r seven

in the case of the three multiplexers f rom each wafer that would be used for

the JPL product. The quiescent supply current I was measured with a l l SS

input terminals to ground and with a l l input terminals connected to 10 V.

Rejection was based on an I measurement a f te r 150 krad(Si). The rejec- SS

tion cr i ter ia a r e given in Table 5. These cr i ter ia have considerable margin

to functional failure.

The rejection rate a t 150 krad was less than 10% for some simple

circuits (gates and flipflops) and greater for complex and large-area circuits

(counters, shift regis ters , multiplexers and buffers). More than 2700 wafers

have now been screened in this manner.

The test dice were not specially screened for I before irradiation. SS

As indicated in Fig. 11, 75% of the devices (Group 1) had leakage currents

below 1 nA, another 20% (Group 2) possessed greater leakage currents , but

sufficiently low to pass the JPL specifications, whereas the remaining 5%

(Group 3) w o ~ l d have been rejected in pre-irradiation screening. The post-

irradiation data for Group 1 (Fig. 12) shows a reasonable Gaussian dis t r i -

bution, but with the rejection limit se t so a s to cause a 12% rejection rate.

The more than 10,000-fold increase in I appears to be the best that can be SS

achieved on this type with the modified annealing process, and i s attributed

to the shift in VTn toward 0 V. Group 2, with marginal pre-irradiation

properties produced a post-irradiation yield of only 66% (see Figs. 1 3 and 14).

A preliminary study on the variation of I over a given wafer af ter SS

irradiation indicates a tight distribction in some wafers, while other wafers

exhibit a great deal of variability. This i s in agreement with the general lot

variability of the product observed during radiation screening.

The distribution of IS_ has been analvzed for a number of different

device types and for both forming gas and nitrogen annealing. The results

for the CD4052 and CD4049 a r e shown in Figs. 15 through 22. The data

indicates a nurnber of bimodal distributions caused by lack lf process

control, but that nitrogen annealing offers a substantially better product.

The data that has been analyzed in this manner i s summarized in Table 6 .

Table 5. Rejection cr i ter ia for RCA CMOS wafer radiation screening

ISS (postradiation), p A

ISS i s quiescent supply current measured with a l l inputs low (ISS1) and a l l inputs high (ISS2).

1 i s off-leakage current through al l transmission gates (switches) in L parallel. IL1 i s measured with a l l switch inputs high (10 V ) and the switch common to ground through the current mcter. IL2 i s measured with the switch common high and all switch inputs to ground through the current meter .

JPL Tech.r.lc:.al Memorandum 3 3 - i o 3

.--... - -- ----- .ir

380 DEVICES FROM 53 WAFERS FROM 7 LOTS

10 30 1W 300 1 3 10 30 100 3 F 1 3 10 30 100 300

nA- PA rA CURRENT

Fig. 11. RCA CD4006, preradiation, ISSl


GROUP I 1 . 5 k 1 0 ~ ( u a d

300 1 3 10 SO 1 0 0 3 0 0 I 3 10 30 1 0 0 J 0 0 1 3 10

4 ~ . nA PA -&- mA - CURRENT

Fig. 12. RCA CD4006, postradiation ISSl of units with preradiation ISS~ < 1 rnA

UNITS WITH PRERADlATlON lSSl

>I nA A N D .C 300 nA (ST LIMIT)

1 REJECTION

I

GROUP 2

1 3 10 30 100 300 1 3 10 30 100 300 1 3 10

~ - A A - ~ ~ A ~ ~ A -

CURRENT

Fig. 13. RCA CD 4006, preradiation, group 2


.. . . --"-- -.- \

POSTRADIATION lSSl OF UNITS WITH

PRERADIATION ISSI > 300 nA (ST LIMIT) I I

GROUP 3

1 REJECTION

I 30pA

~--,.AA~A-- CURRENT

Fig. 14. RCA CD4006, group 3

ST LIMIT 500 n A

GROUP 2

10 3C 100 300 1 3 10 30 100 300 1 3 10 J) 100 300

.- PA -- n.4 --=- FA

CURRENT

Fig. 1 5 . Preradiation ISS current of CD4052A multiplexers with 950" C gate oxide anneal in forming g a s


GROUP 2 t --REJECTION LIMITS 50

--REJECTION

30 100 300 I 3 10 30 100 300 1 3 10 30 100 330

P A * - . - ~ A . - = - P A

CURRENT

Fig. 16. Postradiation ISS current of CD4052A multiplex- e r s with 950°C gate oxide anneal in forming gas

10 30 100 300 1 3 10 30 100 300 1 3 10 30 100 300

pA -+-~ nA P A

CURRENT

Fig. 17 . Preradiation ISS current of CD4052A multiplex- e r s with 950°C gate oxide anneal in nitrogen

JPL Technical Memorar~dum 33-763

REJECTION LIMIT W p A

GROUP 2 1

- - p A 4 - n ~ , 1 , ~ ~

CURRENT

Fig. 18. Postradiation ISS current of CD4052A multiplexers with 950' C gate oxide anneal in nitrogen


VDD -Vss = I O V

~ A ~ ~ A - I - P A CURRENT

Fig. 19. Preradiation IS current of CD4049 with 950" C gate oxi c? e anneal in forming gas

t -- REJECTION LIMIT 7 . 5 ~ A

GROUP l

p~--4-----n*F CURRENT

Fig. 20. Postradiation ISS current of CD4049 with 950' C gate oxide anneal in formifig gae


VDD - vss I O V

Fig. 21. Preradiation ISS current of CD4049 with 950°C gate oxide anneal in nitrogen

GROUP l

PA- ~A--+A - CURRENT

Fig. 22. Postradiation ISs current of CD4049 with 950°C gate oxide anneal in nitrogen

JPL Technical Memorandum 33 - 763

Table 6. Analysis of ISS data

Annealing Peak of Other Rejection Device Function Distribution p r i m e peaks,

type gas devices P A l imi t , pA

CD4006 18-stage Forming Gauss ian 10 pA 30 shift r eg i s t e r gas

CD 401 3 Quad And-Or Forming Gauss ian 5 nA 7 . 5 gate gas

Nitrogen Gauss ian 20 nA 7 . 5

CD 4027 Dual flipflop Forming Gauss ian 20 -A 7 . 5 gas

CD 4029 up/down Forming Bimodal 50 nA 20 5 0 counter gas

Nitrogen Bimodal 5 nA 2 50 50 nA

CD 4049 Hex-buffer Forming Bimodal 50 nA 2 7 . 5 gas

Nitrogen Quasi- 20 nA 2 7 . 5 Guassian

CD 4052 Multiplexer Forming Bimodal 3 nA 2 5 0 & a s 30

Nitrogen Gauss ian 500 n A 5 0

It is evident that the rejection l imi ts do remove lots with lack of s ~ i f a c e

control . The rcjection l imi ts were choseq to s c r e e n out wafers with

catastrophic devices o r with I higher than acceptable to the projec t SS s y s t e n ~ s des igners . The yield f i g ~ ~ e s of the wafer s c r e ~ n i n g p rogram a r e

summarized in Table 7.

Inc reases in I a r e a problem for the u s e r (subsys tem des igner) only SS

wrhen the total for a subsys tem exceeds the cu r ren t avai lable f o r the power

supply, o r when the subsys tem power limitation i s exceeded. Therefore ,

i t i s the average of the inc reases that i s of in te res t , not t l ~ e i-ld'vidual

i n c r e a s e s in 1 SS ' All the R C A CMOS that will be supplied a r e f r o m wafers

whose tes t samples had a post-I50 k rad I of l e s s than 100 t imes the 25OC SS

specification l imit- S? 11868 o r MIL-STD-38510 or equivalent ( s e e Table 5) .

JPL Technical Menlorandurn 33-763

Table 7. CMOS wafer screening s u m m a r y

2793 wafers radiatecr (over 200 lots)

2 162 wafers accepted (77.4%)

Forming gas v s N2, anneal - - - -

Wafers Wafers Accepted, accepted radiated 70

Forming gas 1049 1406 74.6

a ~ x c l u d i n g 5 bad lots a t beginning of N2 anneal

In many c a s e s the pos t - rad ISS was much l e s s than 100 t imes the spacif ica-

tion l imit . Therefore , the total post- 150 krad I fo r a subsys tem should SS

not exceed 100 t imes the s u m of the specification l imi ts for each device in

the subsystem. The above s ta tement should be t rue even though the wafer

s reening does not guarantee that every device urill have a pos t - rad I l e s s SS than the 100 X l imi t , because of the averaging effect. It should be pointed

out that 100 t imes the sun, of the specification l imi ts f o r each device in the

subsys tem cannot be used to establish the maximum cur ren t required f r o m

the power supply since this i s quiescent cu r ren t . The operating cur ren t of

the subsys tem will be higher because it i s proport ional to the ciock o r

operating f r e q u e ~ c i e s of the subsys tem.

3. T .-ansmission Gate Leakage -.

The mult iplexers CD4051, CD4052, and CD4053 were subjected to an

additional sc reen . The off leakage cur ren t through a l l t rdnsmiss ion gates in

para l le l was required to be l e s s than 100 -A measured with a l l switch inputs

a t 10 V and the outputs a t ground (IL1). and l e s s than 100 nA fo r the CD 4052

and CD4053, and 3 pA for the CD4051, with a l l switch outputs a t 10 V and the

inputs a t ground (IL2). This resulted in a yield of about 50% fo r these

device types.

The design requi rements f o r i in the CD4051 a r e m o r e lenient than L2

in the o ther mult iplexers in this projec t . The 3 1.4 c r i t e r ion fo r I of the L2

CD4051 was necessa ry to get any yield f r o m the ea r ly production of these ! $.

> JPL Technical Memorandum 33-763 9

devices. In subsequ2nt forming gas lots IL2 dropped below 1pA typically,

and when the pate ~ x i d e :zzea\ was changed to nitrogen, IL2 dropped below

100 nA t y ~ i c a l l y . The 3pA screening rejection cri terion was reduced to

100 nA for the nitrogen annealed product.

Figures 23 and 24 show the distribution of the IL2 leakage current

before and after irradiatio.1, respectively, for devices annealeZ in forming

gas. It may be seen that prime pre-irradiation devices show a bimodal

distribution after irradiation, resulting in a high yield loss. This problem

was solved by switching to nitrogen annealing. The pre-irradiation dis t r i -

bution (Fig. 25) was the same a s before, but the post-irradiation data

(Fig. 26) shows a more Gaussian distribution, though with a few outliers

beyond 1 pA. The ISS data for the same devices, shown in Figs. 15 through

18, exhibits a very similar behavior.

The I TC of the flight multiplexers i s not expected to exceed the L values in Table 5 for forming gas-annealed product o r 40 nA for n'trogen-

annealed product at 150 krads. Most cf the 4051 product will be forming

VDD - VSS I O V

LIMIT n A

Fig. 23. P r radiation switch leakage current IL2 of Cd4052A multiplexers with 950' C forming gas


GROUP 2

r I I 1 3 10 30 100 300 1 3 I0 30 100 300

Fig. 24. Postradiation switch leakage current IL2 of CD4052A multiplexers with 950" C gate oxide anneal in forming gas

\ . --,

LDD - vss IOV

ST LIMIT

GROUP 2

1 1

I 1 I I I I I 1 1 10 30 100 300 1 3 10 30 100 300 1 3 10 30 100 3W

PA --nA P A

CURRENT

Fig. 25. Preradiation switch leakage cu -ent IL2 of CD4052A multiplexers with 95i gate oxide anneal in nitrogen

JkL Technical Memorandum 33-763

VDD - VSS I O V

I GROUP 2 I

1 1 1 I 1 1 300 1 3 10 30 1W 300 1 3 10 30 100 300

- a 4 - I PA - nA , - - *A

I I

11C5) I ' REJECTION 1 LIMIT 100 n.1

I OUTLIER AT 700 m A

! l l I I I I I 1 I 13 ZJW 1 3 . J 30 100 300 1 3 13 30 100 300

- 3A - ------ n A -1- - - P A - CURRENT

Fig. 26. Postradiat ion switch leakage c u r r e n t IL2 of CD4052A mult ip lexers with 950°C gate oxide anneal in nitrogen

gas-annealed. The 4052 produc; will be a combination of forming gas - and

nitrcgen-annealed devices, and the 4053 prodxct will b e entirely

nit rogen-annealed.

4. ;.Iultiplexer Or.-Resistance

The on- res is tance of the mult iplexers inc reases l e s s than 5% a t

75 krads and 10% a t 150 krads .

5. Propagation Time

4 complete e l e c t ~ i c a l charac ter iza t ion nf some of the CMOS devices

was c a ~ r i e d out for T t J b a t the Naval Research Laboratory using an EH4600 4

sei- ies cor,~pl.~ter-controlled t e s t sys tem a t a total dose of 7 . 5 X 10 and 5

1. 5 x !I) ra3(Si). The p a r a m e t e r s tested and some typical resul t s a r e

JPL Technical biernorandurn 33-763

shown in Table 8. It may be noted that radiation causes a significant

increase in the propagation time. It was established that there i s no

correlation between the radiation effects on propagation delay and quiescent

supply current ISs

Table P . CMOS radiation characterization data a t 150 krad(Si)

Tests . (At VDD = 10 V ) 401 1 4029 4035 40 50

1. Functional (go/no go) vo < 5 v = "0" V > 5 v = "1"

0

2. DC margin (go/no go) v < l V = " O M

0 v > 9 v = "1" 0

3. At Pm ($1 Average 26. 9a

30 pF load Maximum 30

3a. At PLH (%) Average

30 pF load Maximum

4. At ~ H L (70) Average 6. 2a 30 pF load Maximum 8.8

4k. At ~ H L (Too) Average 30 pF load Maximum

All passed

All passed

5. AV drop in output t rans- N-CH<0.1 V < 0.1 <0.1 <O. 1 istr rs a t m i ~ i m u m source/ P-CH < 0.1 V < 0.1 - 0.1 <O. 1 sink current specified in RCA manual

6. Range of maximum qirie- from: 56X 2 50X 23X 2 5X scent supply current A to: 4700X 9800X 3300X '3400X

a Propagation time measurement from pin 2 to pin 3 (in to out).

i b~ropaga t ion time measurement from pin 15 to pin 6 (CL. to 01 ). C Propagation time measurement f rom pin 6 to pin 1 (CL. to Q1).

d ~ r o p a g a t i o n time measurement from pin 3 to pin 2 (in to out). !

t e Propagation time measurement from pin 15 to pin 7 (CL. to ca r ry out).


A more d2tailed analysis was car r ied out on additional measurements

made a t the Hughes (Fullerton) Facility ( see Table 9). The propagation t ime , * . . af te r irradiation appears to be within the J P L specification l imits, but the _ I -

data shows large increases in propagation time. These a r e primarily

influenced by outliers whose change may be up to one order of magnitude worse . .

than the mean. 1

6. Dose Rate and Anne ling Effects . .

Srour (Ref. 5) recently reviewed experimental observations on dose-

rate dependence of the shift in VT in MOS devices. The dependence i s a

' ..lction of the dose rate, the bias conditions during radiation and also the

nature of the gate oxide. Srour irradiated N- and P-channel t ransis tors on

a commercial CMOS inverter using a ~ 0 6 0 source a t rates of 0.23 and

23 rad(Si)/s. He observed a marked rate effect. Annealing the devices a t

room temperature for 140 hours (the time i t takes to perform an i r rad i t ' a ion 5

to 1.2 X 10 rads a t a rate of 0.23 rad/s) following a higher ionization rate

irradiation brought the high and low dose-rate results into agreement.

Yamakawa (Ref. 6) measured rate effects in I of CMOS devices with SS

a 950°C gate-oxide anneal temperature a t 113 and 7.6 rad/s a t a total dose of 5

1. 5 X 10 rad(Si). The bias conditions were a s described in the wafer screen.

The two dose rates represent the screening conditions and the '~ovian radia-

tion environment respectively. There was a strong annealing effect af ter

radiation, tut no rate effect could be detected. Additional experiments on the

propagation time showed no annealing for several days. in agreement with

the hypothesis that the propagation time i s governed by interface states.

7. Conclusions

The radiation resistance of CMOS devices with a gate oxide annealing

temperature of 950°C appears to be adequate for the MJS project, because

the devices will be exposed to a total dose of l ess than 1.25 x 1c5 krad and

because no severe cc ,~ \ ' ra in t s have been imposed on the quiescent supply

current.

Preliminary data indicate that the substitution of forming gas by

nitrogen in the gate oxide annealing s tep has a ve;.v beneficial effect on J


--- I r

Ta

ble

9.

Pro

pa

ga

tio

n t

ime

.a

Pro

pa

ga

tio

n t

ime

, ne

1 M

ean

Max.

-

~

--.

Ca

pa

ci-

Dev

ice

Sp

ecif

ied

P

re

- 1

.5 X

P

re

- P

ara

met

er

tan

ce C

L.

1.2

x

A M

ax

. ty

Pe

lim

it

irra

dia

te

10

5r

ad

ir

rad

iate

1

0

rad

PF

Tab

le 9

(c

on

td) Pro

pa

ga

tio

n t

ime,

ns

Mea

n

Max

Dev

ice

Ca

pa

ci-

Sp

ecif

ied

P

re

- 1

.5 X

P

re

- 1

.5 X

P

ara

met

er

tan

ce C

L,

A

Max

. ty

pe

lim

it

irra

dia

te

lo5

rad

ir

rad

iate

lo

5 r

ad

DF

reducing the post-radiation quiescent supply current and transmission gate

leakage currents of the multiplexers and on producing a more homogeneous

product.

The wafer screening of I i s expensive but necessary in view of the SS

lack of safety margin shown in the distribution, the presence of outliers and

bimodal distributions. F o r future programb, radiation screening of N-

channel and P-channel test transistors associated with each wafer should be

considered, since the absolute values of post-irradiation VTn nnd V a r e TP

more fundamental parameters directly related to oxide and interface states.

At present V is not screened, and this produces a barely tolerable TP

variation in the propagation time. In future programs other process controls

involving capacitor measurements should be considered in direct collabora-

tion with the manufacturers. Such controls have been described in a paper

by Gregory (Ref. 4).

Finally, any futc e programs with a radiation environment in excess

of that encountered by hlJS o- with more stringent design requirements must

use the radiation hard dry gate oxide process developed a t RCA, Somerville,

with DNA support, o r equivalent, since the 950°C annealed process cannot 5 survive a total dose much greater than 1. 5 X 10 rad(Si).

' 6

k - ' I '

CD4001, RCA

I I I I l . I I


. . " ---- ---.- .d

CD4002, RGA

REPRODUCIBII ,Irl'Y (:F i , , : ORIOQNAL PAGE IS p a i ! ,,


CD4006, RCA

i - i 1 1 1 -- I


rl I

CD4011, RCA


CD4012, RCA


- -- "

CD4013, RCA

Ilia.


JPL Technical Memorzndum 33 -763

CA.4014, RCA

nu.

JPL Technical Memorandum 33- 76 3

- 9 I I I --_--_...I

C94015. RCA

JPL Technical ' (emorandurn 33-763

CD4016, RCA


CD4019, RCA

d

i JPL Technical Memorandum 33-763

CD4021, RCA


CD4023, RCA

R E P R O D U C B m OF THE OBI-AL PAGE I8 POOR

JPL Technical hdem~randum 33-763

.. . - ----- --

CD4025, RCA - I


CD4027, RCA


CD4028. RCA


CD4029, RCA

JRL Technical Memorandum 33-763

CD4030. RCA


CD4031. RCA


I 1 I

4 our c w F A I ~ .6

A&

CD4035. RCA

JPL Technical Memorandum 33-7 > I

BEPRoDUmm OF THE ORIGINAL PAGE I8 POOR JPL Technical Memorandum 33-76 3

JI L Tachnical Memorandum 33-763

CD4042, RCA

JPL Te~hnical Memorandum 33-76 3

CD4043, RCA

i JPL Technical Memorandum 33-763 4

CD4047, RCA

REPRODUCIBILITY OF THE ORIGlNAL PAGE I8 POOR


CD4049, RCA


f 1

~ - - - - . . - - - - - . ,?:--~.h~-~--:'bM---- - ~ - ~ . . . . . , . . , , . . , . . , -.-----,*, , . I ,. . .r- ' . * . _ , . , .& ' 4 , .,' , , , . . ."I . ,, . . ./ ,-,- , ,,,:,,; .cic:,+Ei:*':.:,i. ,::;,xA,;;:L .%:?,',$. ,,,, ?w):.bsk: .,-,* .... ,,".;.i: .* +,'c:? '.! ::., : - , , .L~ '~ .~ . ! .~ ' .,,*,,, ,$- , " . . Z ? , ~ , . : L b,., , , , ,.,::. P , ".,, ., , , k > . , '

I., ..,,

1

GD4050. RCA

JPL Technicd Memorandum 33-763

CD4051, RCA 49

@ E 2 ~ U C I B I L I T Y OF THE 304 PAGE I6 POOR JPL Technical Memorandum 33-76 3

C34052. RCA


I - .

CD4053. RCA

306 JPL Technical Memorandum 33-763 i

-- ._ _zC..----.llll.l-- 1- .-..---- --.------ 4 , . - - - a - . - , . - ... . ., , . . .,., . -... - . . ->, - . --

REFERENCES

I . Mnnroe, Theory of Probability, McGraw-Hill, New York, 1951.

2. Reiss, E. M. , and Vincoff, M. N. , "Effects of Variation of Gate- Oxide Anneal Temperature or Radiation Resistance and Reliability of C/MOS Devices, " paper presented at 1975 IEEE Annual Conferenre on Nuclear and Space Radiation Effects, July 14- 17, at Humboldt State University, Arcata, Calif.

3. Burghard, R. A. , Gwyn, C. W. . "Radiation Failure Modes in CMOS Integrated Circuits, " IEEE Trans. Nucl. Sci. , NS-20, Vol. 6, pp. 300-306, Dec. 1973.

4. Gregory, B. L. , "Process Controls for Radiation-Hardened Aluminum Gate Bulk Silicon CMOS, " paper presented a t 1975 IEEE Annual Conference on Nuclear and Space Radiation Effects, July 14-17, a t Humboldt State University, Arcata, Calif.

5. Srour, J. R. , et a l . , "Radiation Effects on Oxides, Semiconductors, and Devices," HDL-CR-75-171-1, i ia r ry Diamond Laboratory, Washington, D. C. , May 1975.

6. Yamakawa, K. A. , " ~ a t e / ~ n n e a l Measurements in RCA CMOS, " iOM 365-F-44-75, Jet Propulsion Laboratory, Pasadena, Calif., June 5, 1975 (an internal document).


J P L alphabetical

code

A DI

ANA

CAD

CRC

CTI

DAL

DIK

EXR

FAS

GEC

HAR

HON

H P A

INL

KMC

MOT

NSC

PMI

APPENDIX A

VENDOR IDENTIFICATION CODE

FSCM number

Vendor

243 55 Analog Devices, Inc., Norwood, Mass

3 1855 Analog Technology Corpore tion

19647 Caddock Electronics, Div of Globe Union, Inc.

12517 Component Research Company. Inc .

Circuit Technology, Inc.

91637 Dale Electronics, Inc ., Subs. of the Lionel Corporation

12954 Dickson Electronics Corporation

52 06 3 Exar Integrated Systems, Inc.

07263 Fairchild Semiconductors, Div of Fai rchild Camera and Instrument Corp.

092 14 General Electric Company, Semi- conductor Products Dept.

91417 Harr is Semiconductor (Radiation, Inc. )

91929 Honeywell, Inc., Microswitch Division

2 8480 Hewlett- Packard Company

32293 Intersil Inc., Cupertino, Cal.

20754 KMC Semiconductor

14713 Motorola Semiconductor Products, Inc.

27014 National Semiconductor Corporation

06665 Precision Monolithics, Inc. , Santa Clara, California


JPL alphabetical

code

RAY

RCA

SET

SGN

SIL

SOD

TIX

T R W

UTR

WEC

FSCM number Vendor

Raytheon Company

RCA Corp., Solid State Division Somerville, N. J.

Semtech Corporation

Signetics Corp., Subs. of Corning Glass Works

Siliconix, Inc.

Solitron Devices, Inc.

Texas instruments, Inc., Semi- conductor Components Div.

T R W Semiconductor, Inc., (PSI)

Unit rode Corp.

Westinghousc Electric Corp., Semiconductor Division


APPENDIX B

RECOMMENDED WORST-CASE ELECTRONIC DEVICE PARAMETER VARIATIONS

The purpose of this appendix i s to provide recommendations to aid the

circuit designer in the worst-case analysis of circuits. The worst case

parameter variations contained in Tables B- 1 through B-6 for transistors,

resistors, fixed capacitors, diodes, TTL (transistor-transistor logic) and

linear integrated circuits, and CMOS integrated circuits a re recommendations

only and not hard requirements.

These tables do not include radiation-induced degradation. Radiation

degradation should be added to the variations in these tables on an individual

part basis where part data i s available. Estimates should be made otherwise.

Section 153 should be contacted when the worst-case analysis i s to be

performed.

4 JPL Techical Memorandum 33-763

Table B-1. Worst-case parameter variations for transistors

As an aid to the circuit designer's worst-case analyses, the maximum

expected parameter variations for system life and temperature a r e given.

It is noted that all parameter changes a r e based on the specific value given in

the application of JPL ST o r manufacturer specifications, except for hFE.

For this parameter the variation is from the design value as established by

appropriate design curves a t 25OC and the design value of IC. For the cases

of saturated switches, the parameter changes of hFE will be established from

the minimum value specified in the manufacturer specifications, or ST. The

data below appl'es to al l transistors listed in +he approved parts list.

Parameter - - -- - - -

Variations Conditions Remarks

h~~ O.g%/"c For temperature

-2570 For life

B V ~ BO - 10% For life and temperature

B V ~ ~ ~ -10% For life and temperature

B V ~ ~ ~ - 3070 For life and temperature

For life

M. 2mVI0C For temperature

For life and temperature

IC BO doubles every For temperature 10°C increase

-1-1 00% For life

doubles every For temperature 10%

+loo% For life

I

Change from design value mfr. spec.

Change from rnin. value in rnfr. spec.

Change f rom min. value in mfr. spec.

Change from min. value in mfr. spec.

Change from max. value in rnfr. spec.

Change from max. value in mfr. spec.

Change from max. value in rnfr. spec. a t 25OC

Change from max. value in mfr. spec. a t 25°C

Added to temperature effects

--


Table B-1 (contd)

Parameter Variations Condition s Remarks


For &fe and temperature








Change from max. value in mfr, spec.






Change from min. value in rnfr. spec.


Table B-2. Worst-case parameter variations for resis tors

Pa r t de sc ription: Manufacturer Manufac tu r e r ' s Tolerance,

General, class, type type number Purchase Design a, b

Carbon comp.

Carbon comp.

Carbon comp.

Precision WW

Metal film

Metal film

Powe r wirewound

Metal glaze

Metal glaze

Metal film fixtrim

HI RES ( l o L 2 ohms)

Ultra high res.

Ultra high res.

ABC

ABC

ABC

SHA

MEP ANG

MEP ANG

DAL

CAD

CAD

ANG

W E L

RCR05

RCRO7

RCR20

HR ser ies

RNC55H

RWR series

MG, MH ser ies

MM series

IV-5

i 5

*5

i 5

i o . 1

i l

a ~ e s i g n tolerance includes purchase, temperature, and end-of-life tolerances except where noted.

b ~ e s i g n tolerance does not include temperature and voltage coefficient effects for which the JPL ST or mfg. spec. should be consulted.


Table B-3. Worst-case parameter variations for fixed capacitors

P a r t description: Manufacturer's Tolerance, 70 General, s ~ l a s s , type Manufacturer type numbe r Purchase ~ e s i ~ n ~

Solid tantalum SPR CSRl3 - KS *lo *20

Ceramic AUX CKR05BX - KS a10 *2 5

Ceramic AUX CKR06BX - KJ *10 *2 5

Ceramic AUX CKRllBX - KR *1 0 e 5

Ceramic AUX CKR12BX - KI?, *10 *2 5

Ceramic AUX CKR14BR - KR *1 0 *30

Ceramic AUX CKR15BR - KR *10 *30

Ceramic, AUX MLlO MC70 A5 i12 temp. comp. MLl l MC90

Ceramic, HV disc. ERIE 800 beries *lo *17

Glass CGW CYFR ser ies *l i2 .1

Cleramic, CYL, AX. AUX HRMC 706A, T BD T BD 206A, 866A, 906A

Porcelain VIT V Y ser ies TBD T BD

Poly sulfone CRC MP ser ies T BD T BD

MICA ELM HRDM T BD T BD

a Pesign tolerance includes purchase, temperature, and end-of-life tolerances except where noted.


Table B-4. Worst-case parameter variations for diodes, Zener diodes



It is noted that all parameter changes a r e based on the specific value given

in the applicable manufacturer's specification o r JPL ST.

Diodes ~ -

Parameter Variation Conditions Remarks

v~ *lOOIo For life Change from value in mfr. spec.

t150 mV For temperature

C t250/0 For life and Change from value in mfr. spec. temperature

tr +lo% For life and Change from value in rnfr. spec. temperature

IR 1OX For life Change from value in mfr. spec.

(a) For temperature Change from value in rnfr. spec.

B~ - 40% For life and Change from value in rnfr. spec. temperature

Zener diodes

V~ T *5 70 For life and Added to tolerance in mfr. spec. temperature

'zr +lo70 For life and Change from value in mfr.. spec. te mpe rature

T~ +100/0 For life and Change f , a m value in mfr. spec. temperature

IR 30X For temperature Change from value in mfr, spec.

1OX For life

v~ +10% For life and Change from value in mfr. spec. temperature

a ~ o u b l e s for every 10°C increase in temperabre.

31 6 JPL Technical Memorandum 33-763

Table B-4 (contd)

Voltage reference diode

Parameter Variation Conditions Remar).

Temp. Coef.

For lite and temperature

Change to tolerance in rnf r. spec.

For temperature Change from vdue in mfr. spec.

For life


4.10% For life

Change from value in mfr. spec.

Added to temperature coeCticiat for temperature variations

Note: Consul twithpartspecial is tsonl ife stabilityfactors.


Table B-5. ~ o r * c a e e parameter va ja t ione for integrated circuits

Ae aid to h e circuit designerle worst-caee analyses, the maxin~unr

expeeed parameter variations for system li. e and temperature a r e $ven.

All p a r a m a e r changee listed a r e baeed on the speciac value given in the

applicable JPL ST. T h e data below apply to al l IC1e listed in rhe approved

parts list.

Digital IC1s (TTL and *ow power "ML)

Parameter V a r i e o c s , '70 Conditions

Vou ~ ( 0 )

OUT(^) I

I IN(#

IN(O) IOTJ T@

I o s

PDH

T~~~

Icc Clock pulse width

Life and temperature







Life and ten :I.. , r l . :



Linear IC1e

A v ~ ~ *40 Life and temperature

1 BIAS AVOS /a T -0s

Icc

IEE



Life and te mpe rature



Life mid tepperature

Life and ttmperature


318 RmDUC#iILITY OF TIIE "

ORIGINAL PAGE IS POOR JPL Technical Memorandum 33-76 3

Table B-6. Worst-case parameter variations for CMOS integrated circuits



All parameter changes listed a r e based on the specific value given in th,.

applicable specification control drawing. The data below apply to al l CMOS

listed in the approved parts lists.

Variations, Yo Variations, Yc/"C Parameter (life) (temperature) Remarks

No D G load

Iss *5 0 t10 Quiescent current

.TPL Technical Memorandum 33-763

APPENDIX C

PARAMETER VALUES O F IC TYPES REQUIRING RADL4TION ACCEPTANCE PRIOR TO FLIGHT USE

The various approaches being used to establish radiation acceptability

of certain IC types prior to flight use a r e the following:

(1) Use a modified o r standard manufacturing process combined

with a sample radiation tes t of each lot built.

( 2 ) Irradiate /anneal (IRAN) a l l of the devices to be used.

(3) IRAN a sample from each lot. In this case, the devices sub-

jected to IRAN as well a s the lot balance a r e considered suitable

for flight.

The starting vzlues of the device parameters and the parameter changes

due to the Jovian environment a r e related to the radiation acceptance approach

employed. For the sake of completeness, IC's that were not radiation-screened

but were used by the subsystems, a r e included.

All IC types (except CMOS) currently being subjected to one of the

above approrches to establish radiation acceptability prior to flight use .Ire

listed in Table C-1 together with the specific parameters being controlled.

Room t e m p e r a t u r ~ parameter values a re given for the following cases.

Initial: Starting worst case values of parameters when the

devices a r e supplied to JPL.

Post-IRAN: Worst case parameter values after devices have been

subjected to IRAN. Hence, for devices subjected to

IRAN, these would be the parameter values a t the time

of initial installation into flight hardware.

Post- JupitL r: Anticipated worst case parameter values after devices

have been through the Jovian environment. Values a r e

given for assumed doses of 12.5, 30, 60 and 125 krads.

Note that for some device types the parameter values may exceed the manu-

facturer 's normally specified limit when the devices a r e initially installed.

Subsystems requiring better parameter values than those in the table must


1. ... -----

-.--I Y I

resort to shielding. Parameters other than those listed in the table may also

be affected by radiation, but have not been identified via the GE circuit anal-

yses as being critical to the applications and are not subject to control.


JPL TechrAical Memorandum 33-763

_._,_ -. - .--- \

Tab

le C

- 1

(c on

td)

Init

ial

Po

st -

Po

st - J

up

ite

r v

alu

es

Man

u -

Pa

ram

ete

r P

art

ty

pe

fac

ture

r co

ntr

oll

ed

IR

AN

12.5

k

rad

3

0 k

rad

6

0 k

rad

1

25

kra

d

DG

129

SIL

DG

133

SIL

DG

141

SIL

DG

181

SIL

DG

Ml1

1

SIL

IS,

off

IS'

off

Is,

off

IS,

off

ID,

off

IS,

off

ID,

off

ID'

off

r D

st

on

rDS

# o

n

(A

)

1

(nA)

(dlb

(n

NC

(oh

ms)

b

a 25

nA f

or

no

nsc

reen

ed

pa

rts.

b~

= D

=-1

0 V

.

C S

= G

ND

, D

=1

0 V

.

1 5a

15

60

Fa

ile

d

Fa

ile

d

30

260

5 10

0

10

00

" .

. -

..""<

1

5 . .-

. .. L

.. ,

- ..,.a

U

-'A

.,,. c..-.-

.*- .-

,~

.*

L.

~-

~"

~b

l*

~~

,~

.~

~u

IY

I

*

w 3 3 3 3 Y Y Y Y Y Y


i JPL Technical Memorandum 33-763

0 f'l rl

K~PRODUCUSI l l'l'l . )!,' , JPL Technical Memorandum 33-763 OfiIGINAIA Pi\(; i; is' !:

------.----- - - - . . .

Ta

ble

C- 1

(c

on

td)

Po

st - J

up

iter

va

lues

M

anu

- P

ara

met

er

Init

ial

Po

st-

Pa

rt t

yp

e fa

ctu

rer

con

tro

lled

IR

AN

12.5

kra

d 30 krad

60 k

rad

125 k

rad

HA9-2700

Ha

rris

(c

on

td)

ICL8018

Inte

rsil

ICL8019

ICL8020

60

40

d Failed

Fa

iled

Fa

iled

Fa

iled

1.3

0.11

d~

ata

str

op

hic

red

uct

ion

in

ou

tpu

t v

olt

ag

e sw

ing

in

neg

ati

ve

dir

ecti

on

.


4

, *"+ +*-t-*.~

4 4 4 E E E


. - --, ..-A, ' . . . . .

Ta

ble

C- 1

(c

oL

~~

)

Po

st -

Ju

pit

er

va

lue

s M

anu

- P

ara

me

ter

Init

ial

Po

st-

p

art

typ

e fa

ctu

rer

co

ntr

oll

ed

IR

AN

1

2.5

kra

d

30

kra

d

60

kra

d

12

5 k

rad

-

(mV

) 0

.9

1.0

1

.1

1.3

5

1.6

5

Lh

il0

8A

H

NS

C

(Ha

rd)

vo

~

(mV

) 0.

1

0.

2

0.4

5

0.7

5

LM

10

8

NS

C

v~~

(mV

) 2

.0

(Un

ha

rd)

(m

v)

Io

s

(nA

) 0

.2

O1

os

(nA)

I B

(nA)

2.0

A I

B

(A

)

A~

~'

2

mA

(d

q)

2. 3

2.

5

59

1

05

2

0. 3

0.

5

5 7

10

50

0.6

1

.6

6.6

6

.7

0.4

1

.4

6.4

6

.5

3.7

6.

5

13

.3

13

.6

1.7

4.

5

11

.3

11

.6

- F

ail

ed

-

-

Ta

ble

C-1

(c

on

td)

M a

nu

- P

ara

me

ter

Init

ial

Po

st-

Po

st-

Jup

ite

r v

alu

es

Part

ty

pe

fa

ctu

rer

co

ntr

oll

ed

lR

AN

1

2.

5 k

rad

30

ir

ad

6

0 k

rad

1

25

kra

d

LM 1

08

H

NS

C

(Ha

rde

ne

d)

~k

l0

8~

~

NS

C

(Ha

rde

ne

d

lot

C!

23

3A

)

LM

11

1F

N

SC

L

M1

11

H

WA

N)

v~

(mv

) 2

Av 0s

fniv

IOS

(n

A)

0. 5

*IO

S

(n

~

j

IB

(nA

) 4

%IE

(nA

)

A~

~'

2 M

A

(db

)

v 0s

!m

V)

2

AV

0s

(mv

!

e~

th

ea

p

ara

me

ters

ar

e t

he

sa

me

as f

or

the

ha

rde

ne

d L

Ml0

8.

cn o m a n - I n a 4

Ta

ble

C-1

(c

on

td)

Ma

nu

- P

ara

me

ter

Part

ty

pe

fac

ture

r c

on

tro

lle

d

Init

ial

Po

st-

P

os

t- J

up

ite

r v

alu

es

IRA

N 1

2.

5 k

rad

39

kra

d

60

kra

d

12

5 k

rad

0s'

off

(m

V)

5 1

7.

5

Fa

ile

d

Fa

ile

d

Fa

ile

d

AV

OS

- o

ff

(mV

) i2

. 5

Fa

ile

d

Fa

ile

d

Fa

ile

d

Ios '

off

(n

A)

25

3

5 F

ail

ed

F

ail

ed

F

ail

ed

A1

~~

s

o ff

(n

A)

10

F

ail

ed

F

ail

ed

F

ail

ed

IB,

off

(n

A)

10

0

21

0

Fa

ile

d

Fa

ile

d

Fa

ile

d

AIB

, o

ff

(nA

1

10

F

ail

ed

F

ail

ed

F

ail

ed

AIS

ink,

o

n

(mA

) -7

. 0

-1

4

- 22

- 2

8

hIs

ink

s 5

0%

(m

A

-6.

0

- 14

-2

2

-23

du

ty c

yc

le

off

(m

A)

-7.

0

Fa

ile

d

Fa

ile

d

Fa

ile

d

g~

ul

l

vo

lta

ge

= 0

.7

V.

-

Tab

le C

-1

(co

ntd

)

Man

u-

Pa

ram

ete

r ln

itia

l P

ost

- P

ost-

Ju

pit

er

va

lue

s

Part

ty

pe

fac

ture

r c

on

tro

lle

d

"due IRAN

12.

5 k

rad

30 k

rad

6

0 k

rad

1

25

kra

d

LM

13

9

NS

C

lJo

Ss

0"

(Un

ha

rd)

0s'

off

Av 0s

' off

loss

0"

AIo

sl

on

=os*

off

AIo

s,

off

IBr

On

AIB

B o

n

IBl

off

AIg

, of

f

5. 5

0. 5

Fa

ile

d

Fa

ile

d

34

9 Fa

ile

d

Fa

ile

d

23

0

13

0

Fa

ile

d

Fa

ile

d

- 7 Fa

ile

d

5. 6

0. 6

Fa

ile

d

Fa

ile

d

4 7

22

Fa

ile

d

Fa

ile

d

315

21 5

Fa

ile

d

Fa

ile

d

- 9

Fa

ile

d

6. 0

1. 0

Fa

ile

d

Fa

ile

d

10

5

80

Fa

ile

d

Fa

ile

d

52

5

42

5

Fa

ile

d

Fa

ile

d

-11

Fa

ile

d

Ta

ble

C-1

(c

on

td)

Pa

rt

typ

e

Ma

nu

- fa

ctu

rer

Po

st-

Ju

pit

er

va

lue

s P

ara

me

ter

Init

ial

Po

st-

c

on

tro

lle

d

IRA

N

12

. 5

kra

d

30

kra

d

60

kra

d

12

5 k

rad

LM

13

9

NS

C

0s' o

n

(Ha

rd)

Av

0s'

on

0s' o

ff

OV

0s' o

ff

AIo

s,

on

IOS

' o

ff

AIO

S,

off

IB'

0"

AIB

' o

n

Ig,

off

AIB

' o

ff O

n

'sin

k'

off

A1

~in

k' o

ff

7 2

Fa

ile

d

Fa

ile

d

10

0

75

Fa

ile

d

Fa

ile

d

60

0

50

0

Fa

ile

d

Fa

ile

d

1. 7

-9.

9

Fa

ile

d

Fa

ile

d

JPL Technical Memorandum 33-763 N A U - J R - C m r ~ L A c.lr

Radiation Design Criteria Handbook - CORE

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Transcript of Radiation Design Criteria Handbook - CORE