Product / Process Change Notification

DRAFT

Important information for your attention:

Product / Process

Change Notification

Dear Customer,

please find attached our INFINEON Technologies PCN:

Final PCN: Several changes affecting Gen 5P Mosfets for DSO8 package

N° 2019-184-A2

▪ Please respond to this PCN by indicating your decision on the approval form, sign it and return to your sales partner

before 2021-04-15.

▪ Infineon aligns with the widely-recognized JEDEC STANDARD “JESD46“, which stipulates:

“Lack of acknowledgement of the PCN within 30 days constitutes acceptance of the change.”

Your prompt reply will help Infineon Technologies to assure a smooth and well-executed transition. If Infineon does not hear

from your side by the due date, we will assume your full acceptance to this proposed change and its implementation.

Your attention and response to this matter is greatly appreciated.

Infineon Technologies AG

Postal Address Headquarters: Am Campeon 1-15, D-85579 Neubiberg, Phone +49 (0)89 234-0

Chairman of the Supervisory Board: Dr. Wolfgang Eder

Management Board: Dr. Reinhard Ploss (CEO), Dr. Helmut Gassel, Jochen Hanebeck, Dr. Sven Schneider

Registered Office: Neubiberg

Commercial Register: München HRB 126492

Notwithstanding the aforesaid individual agreements shall prevail.

of 32021-03-05 restricted

DRAFT

Product / Process

Change Notification

N° 2019-184-A2

Products affected

Detailed Change Information

Subject:

Reason / Motivation:

Description Old New

PROCESS - WAFER PRODUCTION:

New / change of metallization

(specifically chip backside)

Cr/Ni/Ag Sputter Process Ti/Ni/Ag Evaporation Process


New / change of metallization

(specifically chip frontside)

Al/Si Al/Si/Cu


Move of all or part of wafer fab to a

different location/site/subcontractor

Infineon Technologies Americas Corp.,

Temecula, United StatesEPISIL Technologies Inc., Taiwan

PROCESS - ASSEMBLY:

Change of product markingSite location code"C"

Site location code"/P"-Except

AUIRF7397QTR

PROCESS - ASSEMBLY:

Move of all or part of assembly to a

different location/site/subcontractor.

Carsem (M) Sdn.Bhd., Malaysia Amkor Technology Malaysia Sdn. Bhd.,

Malaysia - Except AUIRF7397QTR

TEST FLOW:

Move of all or part of electrical wafer

test and/or final test to a different

location/site/subcontractor

Wafer Probe site: Infineon Technologies

Americas Corp., Temecula, United States

Final Test site; Carsem (M) Sdn.Bhd.

Wafer Probe site: EPISIL Technologies

Inc., Taiwan

Final Test site; Amkor Technology

Malaysia Sdn. Bhd., Malaysia - Except

AUIRF7397QTR

Product Identification

Please refer to attached affected product list 1_cip19184_A2

Final PCN: Several changes affecting Gen 5P Mosfets for DSO8 package

Production consolidation

Traceability assured via Lot number an date code. Assembly site code updated


DRAFT

Product / Process

Change Notification

N° 2019-184-A2

Anticipated Impact of Change

Attachments 1_cip19184_A2 affected product list

3_cip19184_A2 customer information package

Time Schedule

Final qualification report

First samples available

Intended start of delivery [1]

Last Order Date (LOD) [2]

Last Delivery Date (LDD) [3]

No expected impact on electrical performance. Quality and reliability verified by

qualification.

2021-02-28

2021-02-28

3/1/2021 upon approval

If you have any questions, please do not hesitate to contact your local Sales Office.

2021-04-30

2021-10-31

DeQuMa-ID(s): SEM-PW-06 / SEM-PW-07 / SEM-PW-13 / SEM-PA-13 / SEM-PA-

18 / SEM-TF-01

[1] Provided date or earlier after customer approval

[2] Last time buy volume to be placed latest until LOD

[3] Delivery of new product can be earlier (see Intended start of delivery) and depends on approval


PCN 19-184-A2Temecula Transfer G5P DSO8 Mosfet

January 14, 2021Confidential

Copyright © Infineon Technologies AG 2020. All rights reserved. 2

Agenda

Motivation of the change

PCN details

5M+1E Difference

5M+1E Difference Front End

Comparison of clean room level Front End (Environment)

Operator training system Front End (Man)

Equipment comparison Front End (Machine)

Structure comparison table & Materials Front End (Material)

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6

7

8

2020-01-14 Confidential


Agenda

Process flow comparison & Wafer shipping box Front End (Method)

Advanced Measurement System Analysis Front End (Measurement)

5M+1E Difference Back End

Comparison of clean room level Back End (Environment)

Operator training system Back End (Man)

Equipment comparison Back End (Machine)

Structure comparison table & Materials Back End (Material)

Process flow comparison & Wafer shipping box Back End (Method)

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13

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16



Agenda

Final Test Comparison Parameter Results (Measurement)

Electrical Distribution Results

Qualification test report

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18

19



Agenda


PCN details

5M+1E Difference






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8


Transfer to SiFo …

Transfer to SiFo

› Phase out Temecula frontend site

› Transfer to silicon foundries

62020-01-14 Confidential Copyright © Infineon Technologies AG 2020. All rights reserved.

Search for silicon foundries

Our decision: Phase out of 6 inch Temecula frontend site to silicon foundries

In the interest of best serving the needs of our customers and

continuing our path of profitable growth, Infineon has been assessing

the Temecula, California 6" wafer fab as part of the strategic analysis

of our global production landscape.

The site's comparatively low economies of scale have led to the

difficult decision to relocate its production activities during a long

transition period lasting until at least 2021.

Temecula Phase Out:



Agenda


PCN details

5M+1E Difference






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Scope of Change

› Subject: Several changes affecting Gen5P Mosfets for DSO8-package› Reason: Product Consolidation


Temecula Phase Out

› Part of the production will phase over to silicon foundry Episil Holding Inc.in Taiwan

Temecula Phase Out:

Transition period:

Phase over to silicon foundries:

lasting until at least 2021

Episil Holding Inc. (Taiwan)


Front End Wafer FabEPISIL MOSFET: Gen 5

› Episil is an established SiFo Partner to IFX located in Taiwan

› Historically

– Running non-ATV Gen5.x and Gen7 N-channel plannar MOSFET.

– In high volume production of industrial IFX MOSFET for over 12 years.

› Transfer Projects Include:

– ATV Gen5N and Gen7N process from IFX

– ATV Gen5P process from IFX

– ATV IGBT Gen4 process from IFX


Front End Wafer FabEPISIL: Company Information

FAB( Hsinchu Science Park, Taiwan)› Two 6inch FABS and One 5inch FAB

– Clean room area_6A 2000 m²– Clean room area_6B* 6300 m²– Clean room area_5(DF1) 1000 m²

› Key processes– Analog & Power, High Voltage (HV),– CMOS, Mixed-Signal, Bipolar, SiC and GaN

› *6B is the only fab for IFX MOSFET

› Net Revenue (2017): US$ 173M / NT$ 5.2B › R&D investment (plan for 2018): 4% of net Revenue› WSPM / WSPY: 5” DF1 11 k WSPM / 132 k WSPY

6” Fab6A 17 k WSPM / 204 k WSPYFab6B* 37 k WSPM / 444 k WSPY

› Geometric range: 5 µm to 0.5 µm› Employees: 850› Certifications: ISO 9001:2015, IATF 16949:2016, Sony GP

Certification, OHSAS18001:2007, ISO14001:2004

› Wafer Fabrication (FE) for– Power Management & Multimarket


Temecula Transfer to Episil

Temecula

Frontend

Episil


Back End Assembly Sites

Carsem

Assembly Site – Carsem, Malaysia

Assembly Site – Amkor, Malaysia

Amkor


Back End Assembly Site Extension (DSO8)Amkor Technology (M) Sdn. Bhd.

› Amkor Technology (M) Sdn. Bhd. is a semiconductor product packaging and test services

provider for Power Mosfet - Cu Clip Connector & Advanced XDLF Leadframe IC

technology

› Qualified and running production for DSO package

› Amkor is continuously adding DSO capacity at ATM

– XDLF leadframe format

– Enabling both assembly and test full turnkey

› Increasing cooperation between ATM and Infineon on top of all other Amkor Sites


Back End Assembly Site Extension (DSO8) ATM: Key data

› Backend (BE) Assembly & Test Turnkey for– Discrete, Power Packaging, IC

› Factory Area (ATM)– Land 108,800 m²– Building 32,000 m²

› Key products & Packages (ATM)› Power Discrete – SO8-FL, PSMC, TOLL› IC – PQFN, SOIC-8L

› Corp Net Sales (2019): US$ 4.1 bil› Corp R&D investment (2019): US$ 137 mil› Power Discrete & IC Factory (ATM): Advanced lead frame technology - XDLF

Cu Clip InterconnectSpace saving surface mount flat lead designsServing both consumer and automotive turnkey services

› Location (ATM): Telok Panglima Garang (Free Industrial Zone), Selangor, MY› Employees (ATM): 1500+› Certifications (ATM): ISO 9002:1993, ISO14001:1997, OHSAS18001:2003,

IATF 16949:2017


Comparison table between Existing and after PCN


Product AUIRF7342QTR AUIRF7342QTR

PCN Existing After PCN

FE Production site FE Infineon Temecula, US EPISIL, Taiwan

BE Production site Carsem, MalaysiaCarsem, MalaysiaAmkor, Malaysia

Final testing location Carsem, MalaysiaCarsem, MalaysiaAmkor, Malaysia

Si substrate supplier No change No change

Process technology Gen5 P-Channel Gen5 P-Channel

Chip Size (Active Area) No change No change

Top Metal Material Al/1%Si Al/1%Si/0.5%Cu

Top Metal Thickness 4.5 um 5.5 um

Passivation LTO 1um 2-4% WT% PSG PECVD 1um 2-4% WT% PSG

Backside metal Material Cr/Ni-VD/Ag Ti/Ni/Ag

Leadframe No change No change

Die attach No change No change

Wire bonding Material No change No change

Wire bonding Diameter No change No change

Mold compound No change No change

Package DSO8 DSO8

Product Marking (Site code marking) No changeCarsem: No Change

Amkor: /P



Product 94-3447PBF 94-3447PBF

















Package DSO8 DSO8


Amkor: /P




















Package DSO8 DSO8


Amkor: /P



Product AUXHMF7321D2 AUXHMF7321D2

















Package DSO8 DSO8


Amkor: /P




















Package DSO8 DSO8


Amkor: /P






BE Production site Carsem, Malaysia Carsem, Malaysia

Final testing location Carsem, Malaysia Carsem, Malaysia













Package DSO8 DSO8

Product Marking (Site code marking) No change No Change


Agenda


PCN details

5M+1E Difference






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5M+1E DifferencesEpisil is new wafer production site

No ItemsComparison

Concerning point Check Items Check result EvidenceExisting After PCN

1 Environment FE TemeculaBE Carsem, Malaysia

FE EPISILBE ATM, Malaysia

Lower yield due to higher particle level

Clean room cleanliness spec Defect density on wafers

EPISIL and ATM havecomparable clean room defect performance.EPISIL has better KLA defect inspection control

Clean room cleanliness specDefect level on wafers

2 ManFE TemeculaBE Carsem, Malaysia

FE EPISILBE ATM, Malaysia

Miss-operation due to lack of operator training and certification

Operator training and certification system

The same level of training and certification system is implemented in EPISIL and ATM

Operator training and certification systempresentation

3 MachineFE Temecula EquipmentBE Carsem, Malaysia Equipment

FE EPISIL EquipmentBE ATM, Malaysia Equipment

Product performance and reliability risk

In-line / off-line process parameterElectrical distributionQualification results

In-line/ off-line process parameter, And Electrical distribution are comparablebetween the sites

In-line/ off-line process parameterElectrical distributionQualification resultsMachine comparison tableCpk Performance

4 MaterialFE Temecula MaterialBE Carsem, Malaysia Material

FE EPISIL MaterialBE ATM, Malaysia Material

Product performance and reliability risk



Electrical distributionQualification resultsMaterial comparison table

5 Method

Operator sets wafer cassette box to machine in some processOperator sets strips magazine to machine in all process

Operator sets wafer cassette box to machine in some processOperator sets strips magazine to machine in all process

Product performance and reliability risk and wafer damage during the transfer

In-line / off-line process parameterElectrical distributionQualification resultsWafer shipping


In-line/ off-line process parameterElectrical distributionQualification resultsCpk PerformancePictures of wafer shipping box

6 MeasurementTest site TemeculaTest site Carsem, Malaysia

Test site Temecula and EPISILTest site ATM, Malaysia

Data matchingTest data and TesterFinal test comparisonElectrical distribution

Comparable performance

Process flow chart MSAFinal test comparisonElectrical distributionQualification results


*black = both

*red = only Front End

*blue = only Back End


Agenda


PCN details

5M+1E Difference






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5M+1E DifferencesFront End Wafer Fab

Episil is new wafer production site

No ItemsComparison


1 Environment FE Temecula FE EPISILLower yield due to higher particle level


EPISIL has comparable clean room defect performance and better KLA defect inspection control

Clean room cleanliness specDefect level on wafers

2 Man FE Temecula FE EPISILMiss-operation due to lack of operator training and certification


The same level of training and certification system is implemented in EPISIL


3 Machine FE Temecula Equipment FE EPISIL EquipmentProduct performance and reliability risk



In-line/ off-line process parameterElectrical distributionQualification resultsMachine comparison table

4 Material FE Temecula Material FE EPISIL MaterialProduct performance and reliability risk




5 MethodOperator sets wafer cassette box to machine in some process

Operator sets wafer cassette box to machine in some process




In-line/ off-line process parameterElectrical distributionQualification results

6 Measurement Test site TemeculaTest site Temecula and EPISIL

Data matching Test data and Tester Comparable performance Process flow chart MSA



Agenda


PCN details

5M+1E Difference






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Front End Wafer Fab Comparison of clean room level

Cleanroom

EnvironmentEPISIL Temecula

Production Area ISO 3, Class 1 ISO 5, Class 100

Wafer Test AreaISO Class 7, Class

10000(Wafer probe)

ISO 7, Class 10000(Wafer probe)



Agenda


PCN details

5M+1E Difference






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Front End Wafer Fab EPISIL Training & Development Cycle

New Employee Orientation(HR)

Orientation(MFG)

Basic Training &Basic Subjects Evaluation

Skill Training(Machine Operation)

Certification &Evaluation

Re-training

Re-certification &Re-evaluation

Employ/ Allow to operate certified machines

Dismiss/Forbid to operate the uncertified machines

Qualified

Qualified

Disqualified

Disqualified

Learning new machine&Regular Certification


Front End Wafer Fab EPISIL Certification Process

The Operator Completed Study and Can Operate

Independently

Subject Certification Application

Conduct Online Certification in the System

Technical Certification Application

Check Subject Certification Result

Re-training

Re-training

Certification & Evaluation

by the Engineer

Fail

Fail

Pass

Pass

Log the Certification Score to the System/

Allow to operate certified machines


Front End Wafer Fab Temecula Training & Certification System

› Operator training and certification requires

– Orientation and Basic Training– Need to Pass Test

– Specialized Training for every Process / Tool– Complete required minimum hours of on the job training– Pass certification test

– Certification will be documented in the training system– MES system will be updated to allow the operator track in/track out for the certified

process– Certification expires after one year

– Recertification required within one month,– Otherwise MES system update to disable operator

Sifo and TEM training systems are similar


Front End Wafer Fab Temecula Training & Certification

New Employee Orientation

(Safety, HR, Mfg, Quality)

Basic Training

Skill Training(Machine/Process Operation)


Re-training

Re-certification &Re-evaluation

Update MES System to allow the operator theoperation of certified machines/processes

Qualified

Qualified

Disqualified


Re-training

Disqualified



Agenda


PCN details

5M+1E Difference






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Front End Wafer Fab Gen5 ATV MOS Equipment Comparison

› Future Changes will be accessed accordingly to Infineon Change Management Business Process

› Substrate and chemicals share the same specification.

› Total number for Gen5 ATV MOS flow is 150 steps. 90% step are running in different tools.

› All unit processes are matched to the reference site to have comparable process performance

No Breakdown of Tool Delta Assessment

1 CVD (LPCVD/APCVD)Comparable Process

Performance

2 Etch (dry & wet)Comparable Process

Performance

3 Furnace (anneal)Comparable Process

Performance

4 ImplantComparable Process

Performance

5 LithoComparable Process

Performance

6 Wet (clean)Comparable Process

Performance

7Thin film (PVD: top metal & back

metal)Comparable Process

Performance

8 GrindingComparable Process

Performance


General Process Controls of Gen5 ATV MOS(Process Equipment controls / inline/offline key item monitoring)

› After FOX/Gate OX/ Poly gate deposition- thickness measurements

› After litho- optical inspection- critical dimension measurement (CD measurements)- alignment spec measurement

› After Implant- Rs monitoring on control wafer

› After etching- critical dimension measurement (CD measurements)

› Metal deposition- Rs monitoring on control wafer for each layer

› Defect density controls - monitoring (two wafers / Lot) - screening (100% inking)

› Wafertest- Cp/Cpk monitoring- screening (100% inking)



Agenda


PCN details

5M+1E Difference






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Front End Materials

Items Temecula Episil

WaferSupplier SMaterial: Silicon/EPI

Supplier SMaterial: Silicon/EPI

GasSupplier AMaterial: A

Supplier A’Material: A

Wet ChemicalSupplier BMaterial: B

Supplier B’Material: B

FilmSupplier CMaterial: C

Supplier C’Material: C

ImplantSupplier DMaterial: D

Supplier D’Material: D

Photo ChemicalSupplier EMaterial: Photo resist

Supplier E’Material: Photo resist

Top MetalSupplier FMaterial: Al/Si

Supplier F’Material: Al/Si/Cu

Back metalSupplier GMaterial: Cr/Ni/Ag

Supplier G’Material: Ti/Ni/Ag

› Key materials are the same between two sites

› (Note: Supplier A’ represents different supplier from Supplier A and similarly B’ from B etc….)



Agenda









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Front End Wafer FabGen5 ATV MOS Process Flow

Poly GateChannel

WellSource Well

Contact Implant

ILD Contact Top metal

BACKEND

Assembly

BACKEND

Assembly

Temecula

Wafer Test

Temecula

Wafer Test

Temecula

Backside

Temecula

Backside

Episil

Backside

Episil

Backside

Temecula

Wafer Fab

Temecula

Wafer Fab

Episil

Wafer Fab

Episil

Wafer Fab

Episil

Wafer test

Episil

Wafer test

Infineon

Die banks

Infineon

Die banks

Infineon

Die banks

Infineon

Die banks

Passivation

Thinning Back Metal.

Probing AVI. MDE.

Package Final test.

Epi FOX


Comparison Table

Front End Wafer Fab Comparison

Temecula EPISILImprovements/

Remarks

Top Metal Material Al/1%Si Al/1%Si 0.5%CuIndustry commonly used composition (good in Electro-Migration performance)

Top Metal Thickness 4.5 um 5.5 umThicker metallization to eliminate ILD cratering risk in assembly

Backside metal MaterialCr/Ni-VD/Ag Ti/Ni/Ag

EPISIL backside metal scheme in the past 10 years without peeling & Rdson matches well to Temecula


Process Capability and Cpk Comparison› Cp and Cpk, commonly referred to as process capability indices, are used to define the ability of a

process to produce a product that meets requirements. These indices greatly simplifies the management of statistically controlled processes.

› This Cpk index is calculated using specification limits, the standard deviation, and the mean. The index indicates whether the process is capable of producing within specification and is also an indicator of the ability of the process to adhere to the target specification.

› In Infineon we use Cpk => 1.66 as a critieria to ensure process is running with high stability on target specifications.

› Inline and electrical probing parameters are synchronized between EPISIL and Temecula.– Comparable cpk results for inline/offline PPAP parameters and additional key inline

parameters.

– Technology dimensions are comparable and proof comparable process performance independentof equipment differences.

– Comparable cpk results for electrical parameters.– Electric performance is comparable and proofs comparable electric behavior independent of

equipment differences.


Production Process StabilityTemecula vs. Episil

1) Critical Global SPC items in process FMEA>1.67Temecula Episil Corrective Action (Cpk <1.67) Comment

Area Description Cpk Cpk

Diffusion Field oxidation thickness NA 2.68

Diffusion Gate oxidation thickness 3.47 1.97

Diffusion Poly Deposition thickness 3.64 2.37

Diffusion Poly Deposition Rs NA 2.37

CVD Interlayer Dielectric thickness 2.26 1.86

CVD Interlayer Dielectric Phos content NA 1.82

CVD Passivation film thickness NA 1.75

CVD Passivaton Phos Content 4.90 1.90

Dry Etch Contact OX etch rate 2.40 3.44

Dry Etch Contact Si etch rate 2.56 1.96

Implant As implant Rs 2.56 2.44

Implant P implant Rs 1.88 2.35

Implant B implant Rs 2.00 2.20

Thin films Cr or Ti deposition 2.36 2.13

Thin films Ni deposition 4.22 1.93

Thin films Ag deposition 2.00 2.03

Thin films Al deposition 2.32 2.00

Photo Gate poly alignment X 1.84 2.69 EPISIL uses tightening spec (+/- 0.25 um) vs Temecula (+/-0.4 um)

Photo Gate poly alignment Y 1.84 2.69EPISIL uses tightening spec (+/- 0.25 um) vs Temecula (+/-0.4 um)

Photo Contact alignment X 2.18 2.30EPISIL uses tightening spec (+/- 0.25 um) vs Temecula (+/-0.4 um)

Photo Contact alignment Y 2.53 2.30EPISIL uses tightening spec (+/- 0.25 um) vs Temecula (+/-0.4 um)

Photo Gate poly CD NA 2.16

Photo Contact CD NA 2.66

Etch Gate poly CD NA 4.19

Etch Contact CD NA 1.84

Wet etch Metal etch rate NA 1.83

Wet etch Oxide etch rate 3.47 2.16

Wet etch Backside Si Etch rate 1.81 2.00



Agenda









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General information on AMSA / Gauge R&R analysis procedure

› The Advanced Measurement System Analysis (AMSA) methodology, which is based on the “Gauge R&R” procedure, is a fast and efficient tool to:

– analyze and assess the test performance

– identify test instabilities (Repeatability, Reproducibility, Bin flipping)

– evaluate the impact of the measurement process on the overall yield

› Gauge R&R method:

– The GR&R method is a widely used and recognized procedure to assess the statistical properties of reproducibility and repeatability of measurement systems. Based on this statistical procedure a GR&R value can be calculated giving an indicationon the variability of the test system. At Infineon, the variability is classified as excessive if GR&R >25%. Hence, tests with GR&R > 25% are reported in this document. In addition, tests with GR&R > 10% are evaluated Infineon internally.

– Hereby, reproducibility and repeatability are defined as:

– Reproducibility: is the variation of several measurements obtained by using different measuring equipment for measuring the identical characteristic on the same part.

– Repeatability: is the variation of several measurements obtained by using the same measuring equipment for measuring the identical characteristic on the same part.


Gr&R Results

› All critical parameters PASS (less than 25%)– Threshold voltage@5V (VP@5V)– BVDSS @ 250 uA (BVDSSA250)– Diode forward voltage, Vf@5A (VF@5A)– Source-Drain Leakage@55V (IDSS@55V)– Gate-Source Leakage@20V (IGSS@20V)



Agenda









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5M+1E DifferencesBack End Assembly Site Extension (DSO8)

ATM is added as an Assembly Site

No ItemsComparison


1 Environment BE Carsem, Malaysia BE ATM, MalaysiaLower yield due to higher particle level


ATM has comparable clean room defect performance.

Clean room cleanliness spec

2 Man BE Carsem, Malaysia BE ATM, MalaysiaMiss-operation due to lack of operator training and certification


The same level of training and certification system is implemented in ATM


3 MachineBE Carsem, Malaysia Equipment

BE ATM, Malaysia EquipmentProduct performance and reliability risk



Electrical distributionQualification resultsMachine comparison tableCpk Performance

4 MaterialBE Carsem, Malaysia Material

BE ATM, Malaysia MaterialProduct performance and reliability risk




5 MethodOperator sets strips magazine to machine in all process

Operator sets strips magazine to machine in all process


In-line / off-line process parameterElectrical distributionQualification resultsWafer shipping


Electrical distributionQualification resultsCpk PerformancePictures of wafer shipping box

6 MeasurementTest site Carsem, Malaysia

Test site ATM, Malaysia Data matchingFinal test comparisonElectrical distribution

Comparable performance Final test comparisonElectrical distributionQualification results



Agenda









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Back End Assembly Site Extension (DSO8) Comparison of clean room level

Cleanroom

EnvironmentCarsem ATM

Die bank/Front of line

(Wafer mount to Internal QC)ISO 7, Class 10000 ISO 7, Class 10000

End of line

(Molding to Final Inspection)ISO 8, Class 100000 ISO 8, Class 100000

Final Test ISO 8, Class 100000 ISO 8, Class 100000



Agenda









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Back End Assembly SiteCarsem Training

Copyright © Infineon Technologies AG 2020. All rights reserved.

Theory class training Snap test

OJT

Training

Machine Operating Qualification

Pass?Yes

No

Theory certification test

Pass?Yes

NoMES access right

granted

Notify supervisor

Fail Practical

Failed 2x

Upon completion mandatory training

Fail 1st & 2nd attempt

Fail 3rd attempt

Practical

Theory

Release torun production

Updateskill matrix

Failed 2x


Back End Assembly SiteATM Training

Recertification InductionTraining

ProcessTraining

OJT Certification

& CIM registration

Assign to work

New IntakeOperator

Existing Operator :› Transfers to a New Process› Additional Skill (Multi-skill) › Cross Train At Different Product / Process› Long Absent ( >30 Days )› De-Certification / Disqualification :

- Release Operatorto Actual Processto Conduct Routine Task.

- CIM will ONLY allow certified person to operate certified process/machine.

- Perform Minimum 3 Lot Acceptance Qualification (LAQ).

Focus On Process Station Knowledge-Standard Working Method-Direct / Indirect Material

Control Method-Product Handling Method-Defect Management(Criteria, Inspection &

Identification Method)Management-Abnormal Control Method-Recording Method-Basic SPC-**Automotive Product Control Education (Applicable for Automotive

Line)

Assign Operator toActual Process for Hands-On /Skill Up/Observation

-Learn and Work together withexperienced operator

-Perform Min 3 lots Acceptance Qualification (LAQ)

-Perform Trap simulation to Confirm Effectiveness

-Certify OperatorCompetency By

Updating Operator OJT Record

- Judged and approved by Trainer, Supervisor and Manager

- Register Operator ID into CIM system based on her certified process/machine.

Perform RegularRe-Certification Program Half Yearly

* Focus on Process Standard Work Method* Product & Process Specification- Automotive (MP Cotrol)- Quality Mindset Awareness- Past CAR/MRB Lesson Learn)- SPC

- Basic MFG Process- Basic Quality Control- Operation Recording- Yield & Net Calculation- Theory Assessment- Process Control Tools- Total Control Methodology - Out Of Control Action Plan (OCAP)

Perform RegularRe-Certification Program Yearly

* Focus on Process Standard Work Method* Product & Process Specification- Quality Mindset Awareness- Past CAR/MRBLesson Learn- SPC

Onboarding Orientation (HR/FD/HC)- Registration- Safety Briefing- ATM Overview- Terms & Condition- Responsible Business Alliance (RBA) Policy- Standard of Conduct- Security Briefing- Basic Education For New Employees- QualityFIRST Mindset



Agenda









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Back End Assembly Site Gen5 ATV MOS Equipment Comparison

› All processes are matched to the reference site to have comparable process performance

No Breakdown of Tool Delta Assessment Remarks

1 Wafer mount Comparable Process Performance

2 Wafer sawing Comparable Process Performance

3 Die attach Comparable Process Performance

4 Plasma Comparable Process Performance

5 Wire Bond Comparable Process Performance

6 Primer Comparable Process Performance

7 Molding Comparable Process Performance

8 Deflash Comparable Process Performance

9 Plating Comparable Process Performance

10 Trim&Form Comparable Process Performance

11 Test Comparable Process Performance



Agenda









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Back End Materials comparison for ATV DSO8 MOSFET

Items Carsem ATM

LeadframeSupplier AMaterial: A

Supplier A’Material: A

Solder wireSupplier BMaterial: B

Supplier BMaterial: B

Bonding wireSupplier CMaterial: C

Supplier CMaterial: C

Adhesion Promoter(Primer)

Supplier DMaterial: D

Supplier DMaterial: D

Mold compoundSupplier EMaterial: E

Supplier EMaterial: E

Plating Material: F Material: F

› Key materials are the same between two sites

› (Note: Supplier A’ represents different supplier from Supplier A and similarly B’ from B etc….)



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Back End Assembly Site Process Flow for ATV DSO8

› Test

Shipping

To customer

Shipping

To customer

Carsem

Final Test

Carsem

Final Test

Carsem

Assembly

Carsem

Assembly

ATM

Assembly

ATM

Assembly

Carsem

Pre-Assembly

Carsem

Pre-Assembly

ATM

Pre-Assembly

ATM

Pre-Assembly

ATM

Final Test

ATM

Final Test

Carsem

Packing

Carsem

Packing

ATM

Packing

ATM

Packing

Die Attach Wire Bond

Final Test Inspection

Wafer Mounting

Wafer Sawing

Inspection

Molding PMC Deflash Plating Trim Form

Packing QA Final

Laser Marking

Visual Inspecion

Inspection

DA CurePlasma clean


Part Marking Comparison

› Example of part marking

Carsem Amkor



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Back End Assembly Site ExtensionFinal Test Comparison

Vth_250uA Rdson_10V_3.4A



Bvdss_250uA Vsd_2A



Igss_+20V Igss_-20V



Idss_55V



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Electrical parameters 25oC/Ambient – DSO8

Note: Control is Temecula Fab and Qual is EPISIL Fab


Electrical parameters 25oC/Ambient – DSO8



Electrical parameters -40oC/Cold – DSO8



Electrical parameters 175oC/Hot – DSO8




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Qualification Summary - Carsem

Note: Qual Test Vehicles are products put into Reliability Stress Test and represents the matrix parts which are then qualified by similarity.


Qual Test Vehicle /

Qual by Matrix

AUIRF7342QTR DSO8 G5 1.2 55 450 22687 Qual Test Vehicle CSM

AUIRF7309QTR DSO8 G5 0.8 30 450 22687 Matrix CSM



AUXHMF7321D2 DSO8 G5 1.2 30 450 22687 Matrix CSM


94-3447PBF DSO8 G5 1.2 55 450 22687 Matrix CSM

Part Number Package Gen Die Size Voltage Gox QRP# Site

Qualification Summary - Amkor

Note: Qual Test Vehicles are products put into Reliability Stress Test and represents the matrix parts which are then qualified by similarity.


Qual Test Vehicle /

Qual by Matrix

AUIRF7343QTR DSO8 G5 1.2 55 450 22908 Qual Test Vehicle ATM

AUIRF7309QTR DSO8 G5 0.8 30 450 22908 Matrix ATM


AUXHMF7321D2 DSO8 G5 1.2 30 450 22908 Matrix ATM

94-3447PBF DSO8 G5 1.2 55 450 22908 Matrix ATM


Voltage Gox QRP# SitePart Number Package Gen Die Size

Qualification Summary – CarsemRel#22687


Qualification Summary – AmkorRel#22908


Sales name SP number OPN Package

94-3447PBF SP001517084 94-3447PBF PG-DSO-8-902

AUIRF7309QTR SP001521596 AUIRF7309QTR PG-DSO-8-902





AUXHMF7321D2 SP001522944 AUXHMF7321D2 PG-DSO-8-902

Final PCN: Several changes affecting Gen 5P Mosfets for DSO8 packagePCN N° 2019-184-A2

1_cip19184_A2 Page 1 of 1 3/8/2021

Product / Process Change Notification

Documents

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