Nanoelectronic Based Integrated Antennas

Nanoelectronic+Based++

Integrated+Antennas+

Johannes+A.+Russer1,+Giuseppe+Scarpa1,++

Peter+Russer1,+Paolo+Lugli1,+and+Wolfgang+Porod2+

1InsAtute+for+Nanoelectronics,+Technische+Universität+München,+Germany+

2Center+for+Nano+Science+and+Technology,+University+of+Notre+Dame,+USA+

WMF 9: Nanoelectronic Based Integrated Antennas IMS2012, Montreal, June 17-22, 2012 2

Contents

1.  Introduction

2.  Integrated Antennas:

Realization and modelling (CMOS, Bondwire)

3.  Nanoantennas with MOM Tunnel Diodes

4.  Carbon-based Nanoantennas

5.  Novel fabrication techqniques:

Plasmonic Nanostructures

6.  Outlook


On-Chip Nanoantennas for

Sensing and Communication

•  As the structure size of circuit devices and

components is continuously decreasing the

same will hold for antennas and radiation

elements used in integrated circuits for on-chip

and chip-to-chip communication.

•  Following the general scaling trend on-chip

antennas will soon enter the micrometer- and

even the nanometer regime.


Introduction

•  The rate of signal transmission on or between monolithic integrated

circuits is limited by the cross-talk and the dispersion due to the wired

interconnects.

•  An interesting option to overcome the bandwidth limitations is wireless

chip-to-chip and on-chip interconnects via integrated antennas.

•  The electromagnetic coupling of antennas may occur via waves

radiated into space and scattered by objects or via surface waves.


The Wireless MIMO Channel

Model


Contents

1.  Introduction







6.  Outlook


On-chip meander antenna

An intrachip wireless interconnect system using meander monopole on-chip

antennas and operating at 22 GHz to 29 GHz is described in M. Sun, et al., “Performance of Intra-Chip wireless interconnect using On-Chip antennas and

UWB radios,’’ IEEE Trans. on Ant. & Prop., vol. 57, no. 9, pp. 2756-2762, 2009.

On-chip UWB radios in that frequency band are discussed there. The on-chip antennas are meander monopoles with 1 mm axial length.


Realization I


CMOS Integrated Antennas

Schematic drawing of a chip with an integrated antenna

•  Instead of dedicating chip area for the antenna the antenna can

make use of the available on-chip metallization.

•  This can be obtained by dividing the top metallization layer into

patches and impressing an RF signal across the gap between the

patches.


Differential Lines, Connecting the

Digital Circuits Under the Separate

Antenna Patches


Chip with Integrated Antenna

Cross section


CMOS Integrated Antennas

Main Direction

Minimum Direction


Realization II


Bond Wires as Antennas

J.A. Russer, F. Mukhtar, S. Wane, D. Bajon, P. Russer, “Broad-Band Modeling of Bond Wire Antenna

Structures” Proc. 2012 German Microwave Conference (GeMIC), Ilmenau, 12-14 March 2012.


W.-H. Chen, S. Joo, S. Sayilir, R. Willmot, T.-Y. Choi, D. Kim, J. Lu, D. Peroulis, and B. Jung,

“A 6-Gb/s wireless inter-chip data link using 43-GHz transceivers and bond-wire antennas,”

IEEE Journal of Solid-State Circuits, vol. 44, no. 10, pp. 2711 –2721, oct. 2009.

Transceiver ICs and Bond-

Wire Antennas on a PCB


S. Wane, S. Bardy, R. van Heijster, F. Goulet, and P. Gamand, “Design of antenna-on-chip, antenna-

on-package and detectors from RF, microwave to THz frequency range in SiGe-C technology,”

European Microwave Conference (EuMC), Manchester, 2011.

Multi-Chip Module with Bondwire

Antenna Array.


CMOS and CML Power Detectors

Using SiGe-C Technology








Simulated Antenna-on-Chip for mm-Wave

Frequency Range

Simulated Antenna-on-Chip for

mm-Wave Frequency Range


Transceiver ICs and Bond-

Wire Antennas on a PCB





Modelling


Test Structure on Alumina Substrate




Bond WireAntenna




Bond Wire Antenna Transmission Link




Brune Synthesis of an Equivalent Circuit

•  O. Brune, “Synthesis of a finite two terminal network whose drivingpoint impedance is a prescribed

function of frequency,” J. Math. And Phys., vol. 10, no. 3, pp. 191–236, 1931.

•  F. Mukhtar, Y. Kuznetsov, C. Hoffmann, and P. Russer, “Brune’s synthesis of linear lossy distributed

one-port and symmetric two-port microwave circuits,” 2011 German Microwave Conference (GeMiC).


Measured and Computed S11

Parameters






Measured and Computed S12

Parameters


Contents

1.  Introduction







6.  Outlook


Integration of Antennas with

MOM Diodes

•  A promising novel concept for infrared (IR) detectors is

the combination of a nanoantenna with a rectifying

element.

•  The rectifying element extracts a DC component from

the rapidly-varying current delivered from the

nanoantenna. Semiconductor diodes are widely used,

but they encounter frequency limitations for the mm-wave and long-wave IR regime.

•  It has been demonstrated that MOM tunnel diodes can

provide rectification for IR and even optical radiation


Antenna with Integrated MOM Diode

P. Esfandiari, G. Bernstein, P. Fay, W. Porod et al., “Tunable antennacoupled

metal-oxide-metal (MOM) uncooled IR detector,” in Proc. of SPIE, vol. 5783, 2005, pp. 471 – 482.

The MOM diode is naturaly formed at the overlap area

between the antenna arms


Al

MOM diode

Al-AlOx-Pt

Electrical leads

diode formed antenna antenna

Pt Al

Design 1

Shadow evaporation

Design 2

Two step lithography

Pt

MOM diode

Al-AlOx-Pt

Antenna with Integrated MOM Diode


linearly polarized IR

radiation"

Al-AlOx-Al nanoantenna"

Metal Oxide Metal" Metal Oxide Metal"

Metal X Oxide Metal X"

Electrode 1 Electrode 2"

QM"Tunneling"

Net e-transfer for "one half cycle"


Net e-transfer for "other half cycle"


For symmetrical barrier MOM!

No net e-transfer over

complete cycle of IR radiation!

No net QM Tunneling current"

Symmetric MOM - Unbiased


Asymmetric MOM

linearly polarized IR radiation"

Al-AlOx-Pt

nanoantenna

Metal X Metal Y"Electrode 1 Electrode 2"

Metal X Metal Y"


Equilibrium condition"φ = φ1 - φ2=W1-W2

φ2 φ1 φ

Metal X Oxide Metal Y

Vacuum level!

W1"

For unbiased asymmetrical barrier MOM!

Net e-transfer over complete cycle

of IR radiation!

Asymmetric MOM - Unbiased

Metal X Metal Y"Electrode 1 Electrode 2"

W2"


J. A. Bean, B. Tiwari, G. H. Bernstein, P. Fay, and W. Porod, “Thermal infrared detection

using dipole antenna-coupled metal-oxide-metal diodes,” Journal of Vacuum Science &

Technology B: Microelectronics and Nanometer Structures, vol. 27, p. 11, 2009.!

SEM Image of a Shadow Evaporation Device


20 finished devices through 2 step lithography process"

Corresponding SEM image" 2-step lithography dipole antenna"

Al

Pt

Al-AlOx-Pt

Overlap 50x80 nm

Gold

bonding

pads

Two Step Lithography Devices Optical Microscope Images


Contents

1.  Introduction







6.  Outlook


•  Types of CNTs

–  Single-walled nanotubes (SWNT)

–  Multi-walled nanotubes (MWNT)

•  Electrical Properties

–  Ratio of semiconducting to metallic

(typically 2:1)

–  Chemically tunable

•  CNT Films

–  Semiconductor-metal transition and percolation

–  Work function of 4.8 – 4.9 eV

–  High mechanical stability

Basic Information


Carbon Nanotube Antennas

•  A further considerable size reduction of integrated antenna

structures may be achieved using CNTs.

•  CNTs exhibit exceptional electron transport properties,

yielding ballistic carrier transport at room temperature with a

mean free path of around 0.7 µm and a carrier mobility of

10,000 cm2/Vs.



•  Quantum transport effects in the CNT yield a quantum

capacitance CQ and a kinetic inductance LK in addition to

the geometric capacitance CG and inductance LG.

•  The phase velocity for the modified equivalent circuit is

around 0.02 c0 which is in accordance with the reduced

wavelength of the surface plasmons.


  Effective Surface Impedance Boundary Condition*

State of the Art in EM Modelling of CNT‘s

* G.Y. Slepyan et al., Electrodynamics of carbon nanotubes: Dynamic conductivity, impedance boundary conditions,

and surface wave propagation, Phys. Rev. B, 1999, Vol. 60, p. 17136 - 17149

  Based on the quantum-mechanical transport properties (Boltzmann equation)

  Electron transport in different energy-subbands

  Incorporates interband transitions

  Complex, axial sheet conductivity

  Used in Hallén‘s integral equation for MoM solution


Verification and Conclusion (1)

  Dielectric model of CNT

  CNT modeled as a sequence of dielectric cubes

  Excited in the gap by a impressed electric field

  Induced current along CNT computed by


Verification and Conclusion (2)

  Comparison between dielectric model and MoM solution*

* G.W. Hanson, Current on an Infinitely-Long Carbon Nanotube Antenna Excited by a Gap Generator, IEEE Trans.

Antennas Propagat., 2006, Vol. 54, p. 76 - 81

MoM Solution

Effective dielectric model



•  Due to the extremely high aspect ratio (length to cross sectional

area), CNTs have AC resistances per unit length in the order of

several kW/µm.

•  This causes high conduction losses and thus seriously

decreases the efficiency and the achievable gain

ofnanoantennas.

•  This problem could be bypassed using of arrays of nanoantennas or a bundle of parallel nanowires.


Graphene Antennas

•  Like CNTs, graphene also exhibits excellent conductivity and slow

wave properties. The achievable slow-wave effect in plasmon modes is

in the order of c0/100.

•  At THz frequencies a population inversion in the graphene layer can be

realized by optical pumping or forward bias which yields an

amplification of the surface plasmon.

•  Graphene allows the realization of planar structures and also the

realization of active circuits.

J. Moon et al., “Development toward Wafer-Scale graphene RF electronics,” in Topical Meeting

on Silicon Monolithic Integrated Circuits in RF Systems, January 11–13, 2010, New Orleans, LA, Jan 2010, pp. 1-3.


Graphene Antennas

Theoretical investigations have shown that antennas with sizes in the

order of several hundred nanometers are suitable to radiate

electromagnetic waves in the terahertz band, i. e. from 0.1 THz to 1

THz.

J. M. Jornet and I. F. Akyildiz, “Graphene-based nano-antennas for

electromagnetic nanocommunications in the terahertz band,” in Proc. of

4th European Conference on Antennas and Propagation, EUCAP, 2010.


•  Scalable high-throughput process for the fabrication of highly

uniform CNT films

•  Transparent electrodes for organic optoelectronics

 Possible replacement for ITO

•  General technological framework for the development of CNT-

based (flexible) electronics.

CNT Films - Background and

Motivation


Spin-Coating Dip-Coating

Spray-Coating

Vacuum Filtration

•  Chemical and/or thermal

treatments

•  Surfactant removal

–  Enhanced electrical conductivity

–  Enhanced transmittance

•  Doping and dedoping effects

–  Tuning electrical

characteristics

Post-deposition Treatment

Deposition Methods


•  Spray Parameters

–  Nozzle-to-Sample Distance.

–  Substrate Temperature

–  Atomizing/Carrier Gas

Pressure

–  Material Flow Rate

Spray Deposition


•  High uniformity along

with extremely low

surface roughness

–  Average surface

roughness of ~7

nm on 10x10 µm2

•  Finely separated

bundles

–  Average bundle

length of ~ 750

nm

A. Abdellah, A. Yaqub, C. Ferrari, B. Fabel, P. Lugli, G. Scarpa, Spray Deposition of Highly Uniform CNT Films and Their Application

in Gas Sensing, Proceedings IEEE-NANO 2011, pp.1118-1123.,.

Topographical Characterization


•  Concentrated nitric acid treatment

prior to characterization

•  Good DC conductivity

–  4000 S/cm for 45 nm thick layer

σdc= 1/(Rsh·t)

•  Good sheet resistance at high

transparency

–  200 Ω/sq at ~80% transmittance

•  Easy tuning of film parameters

through spray time adjustment

A. Abdellah, A. Yaqub, C. Ferrari, B. Fabel, P. Lugli, G. Scarpa, Spray Deposition of Highly Uniform CNT Films and Their Application

in Gas Sensing, Proceedings IEEE-NANO 2011, pp.1118-1123.,.

Electrical-Optical Characterization


Glass Substrate

10x10 mm2 CNT patch

2-point contacts

Approx. 5 mm spacing

SiO2/Si Substrate

6x6 mm2 CNT patch

Interdigitated electrodes

Well-defined 100 μm spacing

CNT-Sensor Architectures


Grand Challenge

for Analytical Chemistry

ABBY-net Institute for Nanoelectronics [email protected]


Why organic electronics ?

•  Easy to process (low costs)

•  Large area application

•  Flexible substrates

•  Chemical tunability of conjugated polymers

•  easy integration in different devices

•  ecological and economic advantages ....

Example of organic sheet-image

scanner

Inkjet-Printed solar cell from

Konarka


Why printing and plastic ?

Making smart systems on plastic foil can bring

advantages and could bring sensors where there is none

at the moment:

• Thin, planar, flat configuration

• Flexible, foldable, conformal

• Light weight, large area

• Lower-cost

Institute for Nanoelectronics [email protected]

For some domains of application:

• Wearable, implantable solutions • Very low-cost RFID labels

• Internet of Things • Smart textiles


Fabrication Processes

Spin-

coating

Spray-

coating Ink-jet

printing

screen

printing

transfer printing


Review: Material Today (2011)


•  Sensitivity response to several ions (pH, Na, K)

•  Degradation effects under AC / DC bias

•  G. Scarpa et al. IEEE Transactions on Nanotechnology, 2010.

•  G. Scarpa et al. IEEE Nanotechnology Magazine, 2010.

•  G. Scarpa et al. Sensors 10(3), 2262-2273, 2010.

Water-stable operation

in aqueous media


SiO2/Si Substrate

6x6 mm2 CNT patch

Interdigitated electrodes

Well-defined 100 µm spacing

  low-cost fabrication (spray.coating)

  gas-sensing response for NH3, CO2,…

NH3

Spray Deposition of SWNT

Thin-Films

A. Abdellah et al. Spray Deposition of Highly Uniform CNT Films and Their Application in Gas

Sensing, Proceedings IEEE-NANO 2011.

TUM-NANO activities on

CNTs-based sensors


Contents

1.  Introduction







6.  Outlook


Alternative Materials and Fabrication

Techniques

•  The antennas described previously are generally

fabricated with conventional technologies, namely

evaporation of the metallic films followed by patterning via photo or electron-lithography.

•  In the CNT or graphene case, the conductive layers

have to be grown epitaxially on the given substrate.

However, our approach is based on sprayed film

•  Especially when small dimensions are required, as for

the nanometer gaps required in plasmonic structures or

in nanometer scale MOM diodes, a very interesting

alternative could be offered by nanotransfer techniques.


Nanoimprint Nanotransfer

1.

2.

3.

1.

3.

2.

Evaporation

Evaporated

Layer

Nanoimprinting Techniques - Process


Benefits:

•  Simple and flexible

•  Cost effective

•  Repeatable

•  High throughput, large area

•  Small feature size (sub-10nm)

Applications:

•  Semiconductor

•  Magnetic storage media (hard drives)

•  Optical storage media

•  Opto electronics

•  Energy conversion devices

•  Polymer / Molecular electronics

•  Bio-applications

Challenges:

•  One-step Lithography

•  High resolution mould needed

•  Alignment accuracy (limiting factor)

•  Validation / Quality control

Sub-Wavelength gratings,

Metal and polymer gratings

Submicrometer electrodes

Polymeric devices

Structured OPDs, OSCs

Nanostructures for efficient "

Electrochemical Energy Conversion

NIL Features


220 nm 50nm

Obducat 2,5-inch NIL-equipment

with UV and Thermal Capabilities

200nm

100nm

Polymeric"

dielectric and metallic

nanostructures

Results Overview


Motivation:

•  Can function as waveplates, wavefilters, AR

coatings, mirrors, modulators, light-coupling

•  Attractive as top reflectors for VCSELs

instead of DBR

•  High reflection coefficient with thin layers

•  Controlling Parameters: material, grating

period, grating thickness, and fill factor

•  Lines are polarization dependent

•  2D are not polarization dependent

G. Scarpa et al. Nanoimprint Lithography for Optical Components"IEEE ICTON '07, Vol. 2, pp. 194-197, 2007

Sub-Wavelength Gratings


Polymer

Metal+Cathode

Surface+Plasmon+loss+

ITO+

Emission

Waveguide+loss

J. Frischeisen et al., Optics Express, Vol. 19, Issue S1, pp. A7-A19, 2011.

In collaboration with W. Brütting / Schmidt-Mende

Nanoimprinted Gratings for Efficient

OLED Emission


Schematic of Direct Metal-Transfer

A metal coated high resolution

heterostructure is pressed onto a

substrate, thereby creating

nanometer separated electrodes.

S. Harrer, S. Strobel, G. Scarpa, G. Abstreiter, M.

Tornow, and P. Lugli, “Room temperature

nanoimprint lithography using molds fabricated by molecular beam epitaxy,” IEEE Trans.

Nanotechnology, vol. 7, no. 3, pp. 363–370, 2008.

S. Harrer, S. Strobel, G. Penso Blanco, G.

Scarpa, G. Abstreiter, M. Tornow, and P.

Lugli, “Technology assessment of a novel

highyield lithographic technique for sub-15-

nm direct nanotransfer printing of nanogap

electrodes,” IEEE Trans. Nanotechnology,

vol. 8, no. 6, pp. 662 –670, 2009.


Transfer Metal Pads with

a Gap of a Few Nanometers

•  Transferred metal pads, exhibiting

a gap featuring line separations

down to approximately 9 nm.

•  The structures could be transferred

along the complete length of the

mold (approximately 4 mm) with an

efficiency of about 80%.

•  Structures containing several lines

separated by nanometer gaps

have also been realized.



•  Plasmonic nanostructures for

future ultrasmall and ultrafast

devices and for detection

techniques assisted by

localized electric fields. •  L. Jiang, Y. Sun, F. Huo, H. Zhang, L.

Qin, S. Li, und X. Chen, „Free-

standing one-dimensional plasmonic

nanostructures“, Nanoscale, Bd. 4,

Nr. 1, S. 66–75, Dez. 2011.


Antennas for Light

•  Bowtie antenna fabricated by focused ion-beam milling and electron-

beam lithography.

L. Novotny und N. van Hulst, „Antennas for light“, Nature Photonics, Bd. 5, Nr. 2, S. 83–90, Feb. 2011.


Contents

1.  Introduction







6.  Outlook


Conclusion and Outlook

•  As the structure size of circuit devices and components

is continuously decreasing the same will hold for

antennas and radiation elements used in integrated circuits for on-chip and chip-to-chip communication.

•  Following the general scaling trend, on-chip antennas

will soon enter the µ- and even the nanometer regime.

•  Integrated antennas based on nanoelectronics provide a

tremendous potential for the realization of novel devices

and systems from DC up to the optical range.

•  The applications will cover wireless intra-chip and

interchip transmission at Gbit/s rates, field sensors and

photon harvesting systems.


Conclusion and Outlook

•  Intrachip and interchip wireless broadband

communication at millimeterwave carrier frequencies can

be realized in CMOS technology and will allow the transfer of Gbit/s data rates.

•  A further size reduction of antenna structures will be

possible by integration of CNT and graphene antenna

structures. A valuable alternative are printed CNTs film.

•  Integration of sensing elements also on flexible

substrates can be realized.

•  When small dimensions are required, as for the

nanometer gaps required in plasmonic structures or in

nanometer scale MOM diodes, a very interesting

alternative could be offered by nanotransfer techniques.

Nanoelectronic Based Integrated Antennas

Documents

Transcript of Nanoelectronic Based Integrated Antennas