FIELD EFFECT TRANSISTOR

84
1 FIELD EFFECT TRANSISTOR oleh Ir.Bambang Sutopo,M.Phil Jurusan Teknik Elektro FT-UGM 2007 Bahan Kuliah Elektronika Dasar Pertemuan ke 11

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Bahan Kuliah Elektronika Dasar Pertemuan ke 11. FIELD EFFECT TRANSISTOR. oleh Ir.Bambang Sutopo,M.Phil Jurusan Teknik Elektro FT-UGM 2007. DIODA freewheel. DRIVER RELAY ( diskusi tugas lalu). RELAY. V CC. I B-JENUH = arus basis yang membuat transistor dalam kondisi jenuh. R B. - PowerPoint PPT Presentation

Transcript of FIELD EFFECT TRANSISTOR

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FIELD EFFECT TRANSISTOR

olehIr.Bambang Sutopo,M.Phil

Jurusan Teknik ElektroFT-UGM

2007

Bahan Kuliah

Elektronika DasarPertemuan ke 11

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DRIVER RELAY(diskusi tugas lalu)

VVCC

RELAYDIODADIODAfreewheelfreewheel

Relay membutuhkan arus sekitar 50 sampai 100 mili Amper

RB

JENUHB

BECCB I

VVR

2

IB-JENUH = arus basis yang membuat transistor dalam kondisi jenuh.

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TRANSISTOR SBG BUFER OP-AMP

+

_

Input 1

Input 2

relay

R

R harus bisa membatasi arus agar arus yang dikeluarkan op-amp tak terlalu besar.

R harus masih dapat membuat transistor jenuh.

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Pilihan R tergantung

kemampuan IC mengeluarkan arus

(source)atau

dimasuki arus(sink)

relay

relay

relay

200mA

100mA R

25mA

R

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5101

102

103

104

105

0

500

1000

1500

2000

2500Tegangan VCE vs Hambatan Basis

RB (Ohm)

Teg

anga

n V

CE

(m

V) Eka Ardi

Daerah Tak stabil

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6101

102

103

104

105

0

10

20

30

40

50

60

70

80

90Arus Basis vs Hambatan Basis

RB (Ohm)

Aru

s B

asis

(m

A) Eka Ardi

BC107

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710

210

310

40

20

40

60

80

100

120Arus Basis, Tegangan VCE dan Hambatan Basis

RB (Ohm)

Aru

s B

asis

(m

A)/

Teg

anga

n V

CE

(m

V)

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8100 200 300 400 500 600 700 800 900 10000

5

10

15

20

25

30

35

40

45Arus Basis, Tegangan VCE dan Hambatan Basis

RB (Ohm)

Aru

s B

asis

(m

A)/

Teg

anga

n V

CE

(m

V)

1

2

3

IB

VCE

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LM 339/239

OPEN

COLLECTOR

VCC

Beban

Rpull-up

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AND

+

_

+

_

12V

1K

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+

_

+

_

12V

1K

4,7K

4,7K

8,2K

12V

1K

Vin

Lampu

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IC 555

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LM 741

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LM 358

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TOTEM POLE OUTPUT

LM 358

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SOURCE CURRENT

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SINK CURRENT

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LM 124/234/324

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IC 555

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relay

RDIODA FOTO

KOMPARATOR SCHMITT

PROYEK KITA

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Field Effect Transistor - FET

Mengapa kita masih perlu transistor jenis lain?

BJT mempunyai sedikit masalah.

BJT selalu memerlukan arus basis IB, walaupun arus ini kecil, tetapi tidak bisa diabaikan, terutama sekali saat BJT digunakan sebagai saklar, pasti dibutuhkan arus yang cukup besar untk membuat transistor jenuh.

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Field Effect Transistor - FETApakah ada jenis transistor lain yang bisa digerakkan dengan tegangan tanpa membutuhkan arus ?

Jawabannya ada di FET.

Dengan perantaraan FET, kita dapat menghubungkan peralatan komputer atau transduser yang tidak bisa menghasilkan arus, dengan alat yang lebih besar.

FET bisa digunakan sbg bufer, sehingga tidak membutuhkan arus dari komputer/trasduser.

Teknologi modern pembuatan IC, ternyata dimensi transistor FET bisa dibuat sangat kecil, sehingga pembuatan IC saat ini berdasarkan transistor FET ini.

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FET vs BJT

BJTBase (B)Collector (C)Emitter (E)

Base currentCollector currentCollector-Emitter Voltage

FETGate (G)

Drain(D)

Source(S)

Gate VoltageDrain currentDrain-source voltage

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Jenis-jenis FET

• JFET (Junction FET)

• MOSFET (Metal Oxide Silikon FET)

• PMOS ( MOS saluran P)

• NMOS (MOS saluran N)• Masih banyak lagi

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FETFET VDS

VGS

ID

IS

Parameter FET : ID, VGS, VDS.

Dasar pemikiran FET:

Ada arus ID = IS yang mengalir melalui saluran, yang besarnya saluran dikendalikan oleh tegangan VGS.

Karena arus lewat saluran (yang berupa hambatan) maka ada tegangan VDS.

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Junction FETs

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JFET saluran N

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Daerah deplesi membesar dengan bertambahnya tegangan balik

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Saluran N

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Arus Drain current vs tegangan drain-ke-source (tegangan gate-source = 0)

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n-Channel FET for vGS = 0.

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Typical drain characteristics of an n-channel JFET.

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If vDG exceeds the breakdown voltage VB, drain current increases rapidly.

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KURVA KARAKTERISTIK Junction FET

Hubungan

VGS dan ID

2PGSD VVkI

k : konstanta

VP : tegangan pinch-off atau threshold.

Arus dibatasi hanya saat tegangan VGS = 0

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Junction FET – Sumber Arus

Kurva tak dipengaruhi tegangan VDS.

Arus hanya dipengaruhi VGS bukan VDS.

RS membuat VGS selalu negatip.

Misalnya RS = 4K, VGS = -4 V.

Arus di Rload = 1 mA.

RS

VDD

RLoad

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KURVA VDS-ID Junction FET

22

2DS

DSPGSD

VVVVkI

Ada dua daerah operasi :

saturation

linear.

Linear 2PGSD VVkI

SaturationLinear

Saturation

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For low values of VDS the slopes, change from

a resistance (~5v/2.7mA~1.9k) to

a resistance (5v/10mA~0.5k).

A resistance is controlled by an input voltage.

VGS

RG

VDD

RD

VDS, DRAIN-SOURCE VOLTAGE, (Volts)

This makes it possible to have an element in a circuit that can be electronically adjusted.

JFET - variable resistor

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JFET - variable resistor (2)

Now lets analyze the circuit. In the linear region we had a relationship between ID and VDS.

To find the effective resistance this is the voltage across the channel divided by the current through the channel.

22

2DS

DSTGSD

VVVVkI

VGS

RG

VDD

RD

22

1 DSTGS

DS

D

DS

VVVk

V

I

R

If it wasn’t for the last term, we would have a value of 1/RDS that was proportional to VGS, the control voltage and didn’t depend on VDS (remember VT is a constant of the FET, the pinch off voltage). This is like a resistor, and it forms a VOLTAGE DIVIDER with RD.

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n-Channel depletion MOSFET.

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n-Channel enhancement MOSFET showing channel length L and channel width W.

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n-Channel depletion MOSFET showing channel length L and channel width W.

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enhancement-mode n-channel MOSFET

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vGS < Vto pn junction antara drain dan body reverse biased iD=0.

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vGS < Vto pn junction antara drain dan body reverse biased iD=0.

Terbentuk saluran N

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For vGS < Vto the pn junction between drain and body is reverse biased and iD=0.

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vGS >Vto terbentuk saluran n. vGS bertambah saluran membesar.

vDS kecil ,I D sebanding dengan vDS.

resistor tergantung nilai vGS.

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vDS bertambah, saluran mengecil di drain dan Laju pertambahan iD : melambat

Saat vDS> vGS -Vto, iD tetap

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Threshold VoltageVto (VP)

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Kurva karakteristik transistor NMOS

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56Drain characteristics

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Rangkaian penguat sederhana menggunakan NMOS .

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58Drain characteristics and load line

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vDS versus time.

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61Graphical solution

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The more nearly horizontal bias line results in less change in the Q-point.

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Sinyal campuran

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Rangkaian Ekivalen FET

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Rangkaian ekivalen FET ( iD terpengaruh vDS)

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67Penentuan gm dan rd

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Common-source amplifier.

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Rangkaian Ekivalen Common-Source amplifier.

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70Common-source amplifier dengan nilai R

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71 vo(t) dan vin(t) versus time

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Gain magnitude versus frequency

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Source follower.

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Rangkaian Ekivalen Source Follower.

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Common-gate amplifier.

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n-Channel depletion MOSFET.

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Drain current versus vGS in the saturation region for n-channel devices.

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p-Channel FET circuit symbols. Sama = n-channel devices,

kecuali arah panah

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MOSFET-switch

Power MOSFET dapat dialiri arus besar sampai 75 A, dan daya 150 W.

Saat ON punya hambatan sekitar 10 Ohm.

Contoh : IRF510

Mempunyai arus maksimum 5,6 A dab hambatan saat ON 0,4 Ohm.

IRF510

VGS

RG

VDD

RLOAD

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MOSFET-switch (2)

Kurva ID vs. VGS.

Ideal saklar:

saat OFF Arus =0.

Dari kuva terlihat :

Tegangan VGS

< 3 volt, ID = 0

> 5 V arus besar. OFF

ON

Note the log scale!

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PMOS

It is made in n-type silicon.

In this device the gate controls hole flow from source to drain.

source

drain

n-type Si p

gate

+ -

p

What if we apply a big negative voltage on the gate?

If |VGS |>|Vt | (both negative)

then we induce a + charge on the surface (holes)

source drain

n-type Si

P-MOSgate

p p

|VGS |>|Vt |

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NMOS and PMOS Compared NMOS“Body” – p-typeSource – n-typeDrain – n-type VGS – positive

VT – positive

VDS – positive

ID – positive (into drain)

PMOS“Body” – n-typeSource – p-typeDrain – p-type VGS – negative

VT – negative

VDS – negative

ID – negative (into drain)G

n nID

DS

p

B

G

pID

DS

nB

ID

4321VDS

VGS=3V1 mA

VGS=0

(for IDS = 1mA)

4321VDS

VGS= 3V1 mA

VGS=0

ID

(for IDS = -1mA)

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NMOS circuit symbol

CIRCUIT SYMBOLS

G

S

D

A small circle is drawn at the gate to remind us that the polarities are reversed for PMOS.

PMOS circuit symbol

G

S

D

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PMOS Transistor Switch Model

Operation compared to NMOS: It is complementary.

For PMOS for the normal circuit connection is to connect S to VDD (The function of the device is a “pull up”)

VG = VDD

Switch is open : Drain (D) is disconnected from Source (S) when VG = VDD

VG =0

Switch is closed: Drain (D) is connected to Source (S) when VG =0

G

S

D

VDD

VDD

Switch OPEN

VDD

G

S

D

V=0

Switch CLOSED

S

D

G